Abstract
Design of a dual-band balun achieving simultaneous high impedance ratio (>20) and band-ratio (>10) is reported in this brief. The presented design, augmented with closed-form design equations and a systematic design procedure, achieves excellent isolation between output ports and good matching at all the ports. A number of case studies are included to demonstrate the capability of the presented approach for varying design specifications and port-terminations. A prototype is developed for impedance transformation ratio ( ${k}$ ) of 5 and frequency ratio ( ${r}$ ) of 5 concurrently to evaluate the presented design approach show excellent agreement between the simulation and experimental results and thus validate the proposed design strategy. A comparative analysis with a number of recently reported dual-band impedance transforming components demonstrates superior performance of the proposed design.
Original language | English |
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Article number | 9052706 |
Pages (from-to) | 2973-2977 |
Number of pages | 5 |
Journal | IEEE Transactions on Circuits and Systems II: Express Briefs |
Volume | 67 |
Issue number | 12 |
DOIs | |
Publication status | Published - Dec 2020 |
Keywords
- Dual-band balun
- high frequency ratio
- high impedance transformation ratio
- high isolation
- microstrip line
ASJC Scopus subject areas
- Electrical and Electronic Engineering