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An Enhanced Frequency Ratio Dual Band Balun Augmented with High Impedance Transformation

    • Indraprastha Institute of Information Technology Delhi
    • Washington State University Vancouver

    Research output: Contribution to journalArticlepeer-review

    Abstract

    Design of a dual-band balun achieving simultaneous high impedance ratio (>20) and band-ratio (>10) is reported in this brief. The presented design, augmented with closed-form design equations and a systematic design procedure, achieves excellent isolation between output ports and good matching at all the ports. A number of case studies are included to demonstrate the capability of the presented approach for varying design specifications and port-terminations. A prototype is developed for impedance transformation ratio ( ${k}$ ) of 5 and frequency ratio ( ${r}$ ) of 5 concurrently to evaluate the presented design approach show excellent agreement between the simulation and experimental results and thus validate the proposed design strategy. A comparative analysis with a number of recently reported dual-band impedance transforming components demonstrates superior performance of the proposed design.

    Original languageEnglish
    Article number9052706
    Pages (from-to)2973-2977
    Number of pages5
    JournalIEEE Transactions on Circuits and Systems II: Express Briefs
    Volume67
    Issue number12
    DOIs
    Publication statusPublished - Dec 2020

    Keywords

    • Dual-band balun
    • high frequency ratio
    • high impedance transformation ratio
    • high isolation
    • microstrip line

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

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