Analysis of dual-mode lasing characteristics in a 1310-nm optically injected quantum dot distributed feedback laser

R. Raghunathan, J. Olinger, A. Hurtado, F. Grillot, V. Kovanis, L. F. Lester

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Recent work has shown the Quantum Dot (QD) material system to be well-suited to support dual-mode lasing. In particular, optical injection from a master laser (ML) into the residual Fabry-Perot (FP) modes of a 1310 nm Quantum Dot Distributed Feedback (QD-DFB) laser has been recently demonstrated to offer a highly reliable platform for stable dual-mode lasing operation. External controls on the ML, such as operating temperature and bias current, can be used to precisely adjust the spacing between the two lasing modes. This tunability of modeseparation is very promising for a range of applications requiring the generation of microwave, millimeter wave and terahertz signals. Considering the versatility and utility of such a scheme, it is imperative to acquire a deeper understanding of the factors that influence the dual-mode lasing process, in order to optimize performance. Toward this end, this paper seeks to further our understanding of the optically-injected dual-mode lasing mechanism. For fixed values of optical power injected into each FP residual mode and wavelength detuning, the dual-mode lasing characteristics are analyzed with regard to important system parameters such as the position and the intensity of the injected residual mode (relative to the Bragg and the other residual FP modes of the device) for two similarly-fabricated QD-DFBs. Results indicate that for dual mode lasing spaced less than 5 nm apart, the relative intensity of the injected FP mode and intracavity noise levels are critical factors in determining dual mode lasing behavior. Insight into the dual-mode lasing characteristics could provide an important design guideline for the master and QD-DFB slave laser cavities.

    Original languageEnglish
    Title of host publicationNovel In-Plane Semiconductor Lasers XIV
    PublisherSPIE
    Volume9382
    ISBN (Print)9781628414721
    DOIs
    Publication statusPublished - 2015
    EventNovel In-Plane Semiconductor Lasers XIV - San Francisco, United States
    Duration: Feb 9 2015Feb 12 2015

    Other

    OtherNovel In-Plane Semiconductor Lasers XIV
    CountryUnited States
    CitySan Francisco
    Period2/9/152/12/15

    Fingerprint

    Distributed Feedback Lasers
    Distributed feedback lasers
    distributed feedback lasers
    Quantum Dots
    Semiconductor quantum dots
    lasing
    Laser modes
    quantum dots
    Fabry-Perot
    Bias currents
    Lasers
    Laser resonators
    Millimeter waves
    Microwaves
    Optical Injection
    Laser
    DFB Laser
    Wavelength
    Millimeter Wave
    Microwave

    Keywords

    • Distributed feedback lasers
    • Dual-mode lasing
    • Optical injection
    • Quantum dot lasers

    ASJC Scopus subject areas

    • Applied Mathematics
    • Computer Science Applications
    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

    Cite this

    Raghunathan, R., Olinger, J., Hurtado, A., Grillot, F., Kovanis, V., & Lester, L. F. (2015). Analysis of dual-mode lasing characteristics in a 1310-nm optically injected quantum dot distributed feedback laser. In Novel In-Plane Semiconductor Lasers XIV (Vol. 9382). [93821V] SPIE. https://doi.org/10.1117/12.2080690

    Analysis of dual-mode lasing characteristics in a 1310-nm optically injected quantum dot distributed feedback laser. / Raghunathan, R.; Olinger, J.; Hurtado, A.; Grillot, F.; Kovanis, V.; Lester, L. F.

    Novel In-Plane Semiconductor Lasers XIV. Vol. 9382 SPIE, 2015. 93821V.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Raghunathan, R, Olinger, J, Hurtado, A, Grillot, F, Kovanis, V & Lester, LF 2015, Analysis of dual-mode lasing characteristics in a 1310-nm optically injected quantum dot distributed feedback laser. in Novel In-Plane Semiconductor Lasers XIV. vol. 9382, 93821V, SPIE, Novel In-Plane Semiconductor Lasers XIV, San Francisco, United States, 2/9/15. https://doi.org/10.1117/12.2080690
    Raghunathan R, Olinger J, Hurtado A, Grillot F, Kovanis V, Lester LF. Analysis of dual-mode lasing characteristics in a 1310-nm optically injected quantum dot distributed feedback laser. In Novel In-Plane Semiconductor Lasers XIV. Vol. 9382. SPIE. 2015. 93821V https://doi.org/10.1117/12.2080690
    Raghunathan, R. ; Olinger, J. ; Hurtado, A. ; Grillot, F. ; Kovanis, V. ; Lester, L. F. / Analysis of dual-mode lasing characteristics in a 1310-nm optically injected quantum dot distributed feedback laser. Novel In-Plane Semiconductor Lasers XIV. Vol. 9382 SPIE, 2015.
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    AU - Kovanis, V.

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