Analytical stability boundaries for a semiconductor laser subject to optical injection

A. Gavrielides, V. Kovanis, T. Erneux

Research output: Contribution to journalArticlepeer-review

66 Citations (Scopus)


We determine analytically the stability boundaries of a semiconductor laser subject to external optical injection. Specifically, we derive the exact conditions for a steady state limit point and a Hopf bifurcation point in terms of the injection strength and the frequency detuning. These conditions are formulated in parametric form and are appropriate for asymptotic approximations. We investigate the limit of a large ratio of the carrier and photon lifetimes and we discuss the resulting expressions in terms of the linewidth enhancement factor. For negative detuning, the unstable domain is bounded by two Hopf bifurcation points which coincide at a critical negative value of the detuning. For positive detunings, all steady state solutions are unstable. Useful scaling laws characterizing different parts of the stability diagram are derived.

Original languageEnglish
Pages (from-to)253-256
Number of pages4
JournalOptics Communications
Issue number3-4
Publication statusPublished - Mar 15 1997
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Physical and Theoretical Chemistry
  • Electrical and Electronic Engineering

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