Abstract
We determine analytically the stability boundaries of a semiconductor laser subject to external optical injection. Specifically, we derive the exact conditions for a steady state limit point and a Hopf bifurcation point in terms of the injection strength and the frequency detuning. These conditions are formulated in parametric form and are appropriate for asymptotic approximations. We investigate the limit of a large ratio of the carrier and photon lifetimes and we discuss the resulting expressions in terms of the linewidth enhancement factor. For negative detuning, the unstable domain is bounded by two Hopf bifurcation points which coincide at a critical negative value of the detuning. For positive detunings, all steady state solutions are unstable. Useful scaling laws characterizing different parts of the stability diagram are derived.
| Original language | English |
|---|---|
| Pages (from-to) | 253-256 |
| Number of pages | 4 |
| Journal | Optics Communications |
| Volume | 136 |
| Issue number | 3-4 |
| Publication status | Published - Mar 15 1997 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
Cite this
Analytical stability boundaries for a semiconductor laser subject to optical injection. / Gavrielides, A.; Kovanis, V.; Erneux, T.
In: Optics Communications, Vol. 136, No. 3-4, 15.03.1997, p. 253-256.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Analytical stability boundaries for a semiconductor laser subject to optical injection
AU - Gavrielides, A.
AU - Kovanis, V.
AU - Erneux, T.
PY - 1997/3/15
Y1 - 1997/3/15
N2 - We determine analytically the stability boundaries of a semiconductor laser subject to external optical injection. Specifically, we derive the exact conditions for a steady state limit point and a Hopf bifurcation point in terms of the injection strength and the frequency detuning. These conditions are formulated in parametric form and are appropriate for asymptotic approximations. We investigate the limit of a large ratio of the carrier and photon lifetimes and we discuss the resulting expressions in terms of the linewidth enhancement factor. For negative detuning, the unstable domain is bounded by two Hopf bifurcation points which coincide at a critical negative value of the detuning. For positive detunings, all steady state solutions are unstable. Useful scaling laws characterizing different parts of the stability diagram are derived.
AB - We determine analytically the stability boundaries of a semiconductor laser subject to external optical injection. Specifically, we derive the exact conditions for a steady state limit point and a Hopf bifurcation point in terms of the injection strength and the frequency detuning. These conditions are formulated in parametric form and are appropriate for asymptotic approximations. We investigate the limit of a large ratio of the carrier and photon lifetimes and we discuss the resulting expressions in terms of the linewidth enhancement factor. For negative detuning, the unstable domain is bounded by two Hopf bifurcation points which coincide at a critical negative value of the detuning. For positive detunings, all steady state solutions are unstable. Useful scaling laws characterizing different parts of the stability diagram are derived.
UR - http://www.scopus.com/inward/record.url?scp=0031103017&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0031103017&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0031103017
VL - 136
SP - 253
EP - 256
JO - Optics Communications
JF - Optics Communications
SN - 0030-4018
IS - 3-4
ER -