Analytical XTEM study of Ir/InAlAs interfacial reaction for InP-based high electron mobility transistors (HEMTs) gate technology

Liang Wang, Weifeng Zhao, Ilesanmi Adesida

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)718-719
Number of pages2
JournalMicroscopy and Microanalysis
Volume12
Issue numberSUPPL. 2
DOIs
Publication statusPublished - Aug 1 2006

ASJC Scopus subject areas

  • Instrumentation

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