Analytical XTEM study of Ir/InAlAs interfacial reaction for InP-based high electron mobility transistors (HEMTs) gate technology

Liang Wang, Weifeng Zhao, Ilesanmi Adesida

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)718-719
Number of pages2
JournalMicroscopy and Microanalysis
Volume12
Issue numberSUPPL. 2
DOIs
Publication statusPublished - Aug 2006
Externally publishedYes

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High electron mobility transistors
Surface chemistry
high electron mobility transistors

ASJC Scopus subject areas

  • Instrumentation

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Analytical XTEM study of Ir/InAlAs interfacial reaction for InP-based high electron mobility transistors (HEMTs) gate technology. / Wang, Liang; Zhao, Weifeng; Adesida, Ilesanmi.

In: Microscopy and Microanalysis, Vol. 12, No. SUPPL. 2, 08.2006, p. 718-719.

Research output: Contribution to journalArticle

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