Anisotropic etching of InP and InGaAs by using an inductively coupled plasma in Cl2/N2 and Cl2/Ar mixtures at low bias power

J. W. Bae, C. H. Jeong, J. T. Lim, H. C. Lee, G. Y. Yeom, I. Adesida

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

In order to obtain low-damage and vertical-etch profiles during etching of InP and In0.53Ga0.47As, we used inductively-coupled-plasma (ICP) etching with Cl2/N2 and Cl2/Ar gas chemistries at bias powers below 25 W. Vertical etch features were obtained at a gas mixture of Cl2 : N2 = 2 : 13 and a bias power of 25 W for both materials. In the etch process for InP using Cl2/N 2 gas chemistry, PNx was formed on the sample surface. The vapor pressure of PNx was significantly lower than that of PCl x as revealed by X-ray photoelectron spectroscopy (XPS) results. Therefore, through the sidewall passivation by PNx, the sidewall of InP was blocked from the etching species, and that resulted in a highly vertical profile at low bias power. On the other hand, in the etch process for InGaAs using Cl2/N2 gas chemistry, As-N bonds formed on the surface during the etching, and the sidewall passivation by As-N appeared to cause vertical etch profiles at low bias power.

Original languageEnglish
Pages (from-to)1130-1135
Number of pages6
JournalJournal of the Korean Physical Society
Volume50
Issue number4
Publication statusPublished - Apr 2007
Externally publishedYes

Fingerprint

etching
chemistry
passivity
profiles
gases
plasma etching
vapor pressure
gas mixtures
photoelectron spectroscopy
damage
causes
x rays

Keywords

  • Low bias
  • PN
  • Vapor pressure
  • Vertical etch

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Anisotropic etching of InP and InGaAs by using an inductively coupled plasma in Cl2/N2 and Cl2/Ar mixtures at low bias power. / Bae, J. W.; Jeong, C. H.; Lim, J. T.; Lee, H. C.; Yeom, G. Y.; Adesida, I.

In: Journal of the Korean Physical Society, Vol. 50, No. 4, 04.2007, p. 1130-1135.

Research output: Contribution to journalArticle

@article{14f0adfffb0c427e8aedf10f266d6b08,
title = "Anisotropic etching of InP and InGaAs by using an inductively coupled plasma in Cl2/N2 and Cl2/Ar mixtures at low bias power",
abstract = "In order to obtain low-damage and vertical-etch profiles during etching of InP and In0.53Ga0.47As, we used inductively-coupled-plasma (ICP) etching with Cl2/N2 and Cl2/Ar gas chemistries at bias powers below 25 W. Vertical etch features were obtained at a gas mixture of Cl2 : N2 = 2 : 13 and a bias power of 25 W for both materials. In the etch process for InP using Cl2/N 2 gas chemistry, PNx was formed on the sample surface. The vapor pressure of PNx was significantly lower than that of PCl x as revealed by X-ray photoelectron spectroscopy (XPS) results. Therefore, through the sidewall passivation by PNx, the sidewall of InP was blocked from the etching species, and that resulted in a highly vertical profile at low bias power. On the other hand, in the etch process for InGaAs using Cl2/N2 gas chemistry, As-N bonds formed on the surface during the etching, and the sidewall passivation by As-N appeared to cause vertical etch profiles at low bias power.",
keywords = "Low bias, PN, Vapor pressure, Vertical etch",
author = "Bae, {J. W.} and Jeong, {C. H.} and Lim, {J. T.} and Lee, {H. C.} and Yeom, {G. Y.} and I. Adesida",
year = "2007",
month = "4",
language = "English",
volume = "50",
pages = "1130--1135",
journal = "Journal of the Korean Physical Society",
issn = "0374-4884",
publisher = "Korean Physical Society",
number = "4",

}

TY - JOUR

T1 - Anisotropic etching of InP and InGaAs by using an inductively coupled plasma in Cl2/N2 and Cl2/Ar mixtures at low bias power

AU - Bae, J. W.

AU - Jeong, C. H.

AU - Lim, J. T.

AU - Lee, H. C.

AU - Yeom, G. Y.

AU - Adesida, I.

PY - 2007/4

Y1 - 2007/4

N2 - In order to obtain low-damage and vertical-etch profiles during etching of InP and In0.53Ga0.47As, we used inductively-coupled-plasma (ICP) etching with Cl2/N2 and Cl2/Ar gas chemistries at bias powers below 25 W. Vertical etch features were obtained at a gas mixture of Cl2 : N2 = 2 : 13 and a bias power of 25 W for both materials. In the etch process for InP using Cl2/N 2 gas chemistry, PNx was formed on the sample surface. The vapor pressure of PNx was significantly lower than that of PCl x as revealed by X-ray photoelectron spectroscopy (XPS) results. Therefore, through the sidewall passivation by PNx, the sidewall of InP was blocked from the etching species, and that resulted in a highly vertical profile at low bias power. On the other hand, in the etch process for InGaAs using Cl2/N2 gas chemistry, As-N bonds formed on the surface during the etching, and the sidewall passivation by As-N appeared to cause vertical etch profiles at low bias power.

AB - In order to obtain low-damage and vertical-etch profiles during etching of InP and In0.53Ga0.47As, we used inductively-coupled-plasma (ICP) etching with Cl2/N2 and Cl2/Ar gas chemistries at bias powers below 25 W. Vertical etch features were obtained at a gas mixture of Cl2 : N2 = 2 : 13 and a bias power of 25 W for both materials. In the etch process for InP using Cl2/N 2 gas chemistry, PNx was formed on the sample surface. The vapor pressure of PNx was significantly lower than that of PCl x as revealed by X-ray photoelectron spectroscopy (XPS) results. Therefore, through the sidewall passivation by PNx, the sidewall of InP was blocked from the etching species, and that resulted in a highly vertical profile at low bias power. On the other hand, in the etch process for InGaAs using Cl2/N2 gas chemistry, As-N bonds formed on the surface during the etching, and the sidewall passivation by As-N appeared to cause vertical etch profiles at low bias power.

KW - Low bias

KW - PN

KW - Vapor pressure

KW - Vertical etch

UR - http://www.scopus.com/inward/record.url?scp=34248377869&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34248377869&partnerID=8YFLogxK

M3 - Article

VL - 50

SP - 1130

EP - 1135

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - 4

ER -