Anisotropic etching of InP and InGaAs by using an inductively coupled plasma in Cl2/N2 and Cl2/Ar mixtures at low bias power

J. W. Bae, C. H. Jeong, J. T. Lim, H. C. Lee, G. Y. Yeom, I. Adesida

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13 Citations (Scopus)

Abstract

In order to obtain low-damage and vertical-etch profiles during etching of InP and In0.53Ga0.47As, we used inductively-coupled-plasma (ICP) etching with Cl2/N2 and Cl2/Ar gas chemistries at bias powers below 25 W. Vertical etch features were obtained at a gas mixture of Cl2 : N2 = 2 : 13 and a bias power of 25 W for both materials. In the etch process for InP using Cl2/N 2 gas chemistry, PNx was formed on the sample surface. The vapor pressure of PNx was significantly lower than that of PCl x as revealed by X-ray photoelectron spectroscopy (XPS) results. Therefore, through the sidewall passivation by PNx, the sidewall of InP was blocked from the etching species, and that resulted in a highly vertical profile at low bias power. On the other hand, in the etch process for InGaAs using Cl2/N2 gas chemistry, As-N bonds formed on the surface during the etching, and the sidewall passivation by As-N appeared to cause vertical etch profiles at low bias power.

Original languageEnglish
Pages (from-to)1130-1135
Number of pages6
JournalJournal of the Korean Physical Society
Volume50
Issue number4
DOIs
Publication statusPublished - Apr 2007

Keywords

  • Low bias
  • Vapor pressure
  • Vertical etch

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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