@inproceedings{aabefea2b4d542cb8593c167a0d86472,
title = "Application of a graphene buffer layer for the growth of high quality SnS films on GaAs(100) substrate",
abstract = "Tin mono-sulfide (SnS) thin films have been grown by molecular beam epitaxy (MBE) on two different substrates, GaAs (100) and soda lime glass at 400°C. High resolution X-ray Diffraction (HXRD) and Scanning Electron Microscopy (SEM) are used to characterize the structural properties of the as grown SnS films. By introducing a graphene buffer layer between the SnS thin film and the substrate, the XRD rocking curve's full width at half maximum (FWHM) of the SnS film grown on GaAs (100) and soda lime glass decrease from 2.92°to 0.37°and from 6.58°to 2.04°respectively, indicating a significant improvement of SnS thin films.",
keywords = "Gallium arsenide, graphene, molecular beam epitaxy, scanning electron microscopy, X-ray diffraction",
author = "W. Wang and Leung, {K. K.} and Fong, {W. K.} and Wang, {S. F.} and Hui, {Y. Y.} and Lau, {S. P.} and C. Surya",
note = "Copyright: Copyright 2012 Elsevier B.V., All rights reserved.; 38th IEEE Photovoltaic Specialists Conference, PVSC 2012 ; Conference date: 03-06-2012 Through 08-06-2012",
year = "2012",
month = nov,
day = "26",
doi = "10.1109/PVSC.2012.6318130",
language = "English",
isbn = "9781467300643",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
pages = "2614--2616",
booktitle = "Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012",
}