Application of a graphene buffer layer for the growth of high quality SnS films on GaAs(100) substrate

W. Wang, K. K. Leung, W. K. Fong, S. F. Wang, Y. Y. Hui, S. P. Lau, C. Surya

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Tin mono-sulfide (SnS) thin films have been grown by molecular beam epitaxy (MBE) on two different substrates, GaAs (100) and soda lime glass at 400°C. High resolution X-ray Diffraction (HXRD) and Scanning Electron Microscopy (SEM) are used to characterize the structural properties of the as grown SnS films. By introducing a graphene buffer layer between the SnS thin film and the substrate, the XRD rocking curve's full width at half maximum (FWHM) of the SnS film grown on GaAs (100) and soda lime glass decrease from 2.92°to 0.37°and from 6.58°to 2.04°respectively, indicating a significant improvement of SnS thin films.

Original languageEnglish
Title of host publicationProgram - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Pages2614-2616
Number of pages3
DOIs
Publication statusPublished - Nov 26 2012
Externally publishedYes
Event38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States
Duration: Jun 3 2012Jun 8 2012

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

Conference38th IEEE Photovoltaic Specialists Conference, PVSC 2012
CountryUnited States
CityAustin, TX
Period6/3/126/8/12

Keywords

  • Gallium arsenide
  • graphene
  • molecular beam epitaxy
  • scanning electron microscopy
  • X-ray diffraction

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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