Application of a graphene buffer layer for the growth of high quality SnS films on GaAs(100) substrate

W. Wang; K. K. Leung; W. K. Fong; S. F. Wang; Y. Y. Hui; S. P. Lau; C. Surya

doi:10.1109/PVSC.2012.6318130

Application of a graphene buffer layer for the growth of high quality SnS films on GaAs(100) substrate

W. Wang, K. K. Leung, W. K. Fong, S. F. Wang, Y. Y. Hui, S. P. Lau, C. Surya

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Tin mono-sulfide (SnS) thin films have been grown by molecular beam epitaxy (MBE) on two different substrates, GaAs (100) and soda lime glass at 400°C. High resolution X-ray Diffraction (HXRD) and Scanning Electron Microscopy (SEM) are used to characterize the structural properties of the as grown SnS films. By introducing a graphene buffer layer between the SnS thin film and the substrate, the XRD rocking curve's full width at half maximum (FWHM) of the SnS film grown on GaAs (100) and soda lime glass decrease from 2.92°to 0.37°and from 6.58°to 2.04°respectively, indicating a significant improvement of SnS thin films.

Original language	English
Title of host publication	Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Pages	2614-2616
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC.2012.6318130
Publication status	Published - Nov 26 2012
Externally published	Yes
Event	38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States Duration: Jun 3 2012 → Jun 8 2012

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Country	United States
City	Austin, TX
Period	6/3/12 → 6/8/12

Keywords

Gallium arsenide
graphene
molecular beam epitaxy
scanning electron microscopy
X-ray diffraction

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2012.6318130

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Wang, W., Leung, K. K., Fong, W. K., Wang, S. F., Hui, Y. Y., Lau, S. P., & Surya, C. (2012). Application of a graphene buffer layer for the growth of high quality SnS films on GaAs(100) substrate. In Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012 (pp. 2614-2616). [6318130] (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2012.6318130

Application of a graphene buffer layer for the growth of high quality SnS films on GaAs(100) substrate. / Wang, W.; Leung, K. K.; Fong, W. K.; Wang, S. F.; Hui, Y. Y.; Lau, S. P.; Surya, C.

Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012. 2012. p. 2614-2616 6318130 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Wang, W, Leung, KK, Fong, WK, Wang, SF, Hui, YY, Lau, SP & Surya, C 2012, Application of a graphene buffer layer for the growth of high quality SnS films on GaAs(100) substrate. in Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012., 6318130, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 2614-2616, 38th IEEE Photovoltaic Specialists Conference, PVSC 2012, Austin, TX, United States, 6/3/12. https://doi.org/10.1109/PVSC.2012.6318130

Wang W, Leung KK, Fong WK, Wang SF, Hui YY, Lau SP et al. Application of a graphene buffer layer for the growth of high quality SnS films on GaAs(100) substrate. In Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012. 2012. p. 2614-2616. 6318130. (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2012.6318130

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title = "Application of a graphene buffer layer for the growth of high quality SnS films on GaAs(100) substrate",

abstract = "Tin mono-sulfide (SnS) thin films have been grown by molecular beam epitaxy (MBE) on two different substrates, GaAs (100) and soda lime glass at 400°C. High resolution X-ray Diffraction (HXRD) and Scanning Electron Microscopy (SEM) are used to characterize the structural properties of the as grown SnS films. By introducing a graphene buffer layer between the SnS thin film and the substrate, the XRD rocking curve's full width at half maximum (FWHM) of the SnS film grown on GaAs (100) and soda lime glass decrease from 2.92°to 0.37°and from 6.58°to 2.04°respectively, indicating a significant improvement of SnS thin films.",

keywords = "Gallium arsenide, graphene, molecular beam epitaxy, scanning electron microscopy, X-ray diffraction",

author = "W. Wang and Leung, {K. K.} and Fong, {W. K.} and Wang, {S. F.} and Hui, {Y. Y.} and Lau, {S. P.} and C. Surya",

year = "2012",

month = nov,

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doi = "10.1109/PVSC.2012.6318130",

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AU - Wang, W.

AU - Leung, K. K.

AU - Fong, W. K.

AU - Wang, S. F.

AU - Hui, Y. Y.

AU - Lau, S. P.

AU - Surya, C.

PY - 2012/11/26

Y1 - 2012/11/26

N2 - Tin mono-sulfide (SnS) thin films have been grown by molecular beam epitaxy (MBE) on two different substrates, GaAs (100) and soda lime glass at 400°C. High resolution X-ray Diffraction (HXRD) and Scanning Electron Microscopy (SEM) are used to characterize the structural properties of the as grown SnS films. By introducing a graphene buffer layer between the SnS thin film and the substrate, the XRD rocking curve's full width at half maximum (FWHM) of the SnS film grown on GaAs (100) and soda lime glass decrease from 2.92°to 0.37°and from 6.58°to 2.04°respectively, indicating a significant improvement of SnS thin films.

AB - Tin mono-sulfide (SnS) thin films have been grown by molecular beam epitaxy (MBE) on two different substrates, GaAs (100) and soda lime glass at 400°C. High resolution X-ray Diffraction (HXRD) and Scanning Electron Microscopy (SEM) are used to characterize the structural properties of the as grown SnS films. By introducing a graphene buffer layer between the SnS thin film and the substrate, the XRD rocking curve's full width at half maximum (FWHM) of the SnS film grown on GaAs (100) and soda lime glass decrease from 2.92°to 0.37°and from 6.58°to 2.04°respectively, indicating a significant improvement of SnS thin films.

KW - Gallium arsenide

KW - graphene

KW - molecular beam epitaxy

KW - scanning electron microscopy

KW - X-ray diffraction

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ER -

Application of a graphene buffer layer for the growth of high quality SnS films on GaAs(100) substrate

Abstract

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Keywords

ASJC Scopus subject areas

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