Abstract
The optical transmittance of indium-tin-oxide (ITO) at a wavelength of 1.3 pm has been improved by adding forming gas (H2/N2) to the Ar sputtering gas. It is shown that the presence of H2 in the plasma decreases the carrier concentration in ITO, and increases the optical transmittance of a 320 nm-thick ITO film from 69.7% to 99.5%. The application of the high transmittance ITO to the fabrication of metal-semiconductor-metal (MSM) photodiodes on InAlAs/InGaAs heterostructures has resulted in an improvement of responsivity from 0.6 A/W to 0.76 A/W. This is double the responsivity of 0.39 A/W obtained for Ti/Au detectors. A 3-dB bandwidth of 6 GHz was obtained for the high transparency ITO device with 3 μm fingers and gaps and with an area of 50 × 50 μm2.
| Original language | English |
|---|---|
| Pages (from-to) | 1313-1315 |
| Number of pages | 3 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 5 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 1993 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
Cite this
Application of indium-tin-oxide with improved transmittance at 1.3 μm for MSM photodetectors. / Seo, Jong Wook; Adesida, Ilesanmi; Caneau, Catherine; Bhat, Rajaram.
In: IEEE Photonics Technology Letters, Vol. 5, No. 11, 1993, p. 1313-1315.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Application of indium-tin-oxide with improved transmittance at 1.3 μm for MSM photodetectors
AU - Seo, Jong Wook
AU - Adesida, Ilesanmi
AU - Caneau, Catherine
AU - Bhat, Rajaram
PY - 1993
Y1 - 1993
N2 - The optical transmittance of indium-tin-oxide (ITO) at a wavelength of 1.3 pm has been improved by adding forming gas (H2/N2) to the Ar sputtering gas. It is shown that the presence of H2 in the plasma decreases the carrier concentration in ITO, and increases the optical transmittance of a 320 nm-thick ITO film from 69.7% to 99.5%. The application of the high transmittance ITO to the fabrication of metal-semiconductor-metal (MSM) photodiodes on InAlAs/InGaAs heterostructures has resulted in an improvement of responsivity from 0.6 A/W to 0.76 A/W. This is double the responsivity of 0.39 A/W obtained for Ti/Au detectors. A 3-dB bandwidth of 6 GHz was obtained for the high transparency ITO device with 3 μm fingers and gaps and with an area of 50 × 50 μm2.
AB - The optical transmittance of indium-tin-oxide (ITO) at a wavelength of 1.3 pm has been improved by adding forming gas (H2/N2) to the Ar sputtering gas. It is shown that the presence of H2 in the plasma decreases the carrier concentration in ITO, and increases the optical transmittance of a 320 nm-thick ITO film from 69.7% to 99.5%. The application of the high transmittance ITO to the fabrication of metal-semiconductor-metal (MSM) photodiodes on InAlAs/InGaAs heterostructures has resulted in an improvement of responsivity from 0.6 A/W to 0.76 A/W. This is double the responsivity of 0.39 A/W obtained for Ti/Au detectors. A 3-dB bandwidth of 6 GHz was obtained for the high transparency ITO device with 3 μm fingers and gaps and with an area of 50 × 50 μm2.
UR - http://www.scopus.com/inward/record.url?scp=0027701376&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0027701376&partnerID=8YFLogxK
U2 - 10.1109/68.250054
DO - 10.1109/68.250054
M3 - Article
VL - 5
SP - 1313
EP - 1315
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
SN - 1041-1135
IS - 11
ER -