Application of indium-tin-oxide with improved transmittance at 1.3 μm for MSM photodetectors

Jong Wook Seo; Ilesanmi Adesida; Catherine Caneau; Rajaram Bhat

doi:10.1109/68.250054

Application of indium-tin-oxide with improved transmittance at 1.3 μm for MSM photodetectors

Jong Wook Seo, Ilesanmi Adesida, Catherine Caneau, Rajaram Bhat

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

The optical transmittance of indium-tin-oxide (ITO) at a wavelength of 1.3 pm has been improved by adding forming gas (H₂/N₂) to the Ar sputtering gas. It is shown that the presence of H₂ in the plasma decreases the carrier concentration in ITO, and increases the optical transmittance of a 320 nm-thick ITO film from 69.7% to 99.5%. The application of the high transmittance ITO to the fabrication of metal-semiconductor-metal (MSM) photodiodes on InAlAs/InGaAs heterostructures has resulted in an improvement of responsivity from 0.6 A/W to 0.76 A/W. This is double the responsivity of 0.39 A/W obtained for Ti/Au detectors. A 3-dB bandwidth of 6 GHz was obtained for the high transparency ITO device with 3 μm fingers and gaps and with an area of 50 × 50 μm².

Original language	English
Pages (from-to)	1313-1315
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	5
Issue number	11
DOIs	https://doi.org/10.1109/68.250054
Publication status	Published - Nov 1993
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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title = "Application of indium-tin-oxide with improved transmittance at 1.3 μm for MSM photodetectors",

abstract = "The optical transmittance of indium-tin-oxide (ITO) at a wavelength of 1.3 pm has been improved by adding forming gas (H2/N2) to the Ar sputtering gas. It is shown that the presence of H2 in the plasma decreases the carrier concentration in ITO, and increases the optical transmittance of a 320 nm-thick ITO film from 69.7% to 99.5%. The application of the high transmittance ITO to the fabrication of metal-semiconductor-metal (MSM) photodiodes on InAlAs/InGaAs heterostructures has resulted in an improvement of responsivity from 0.6 A/W to 0.76 A/W. This is double the responsivity of 0.39 A/W obtained for Ti/Au detectors. A 3-dB bandwidth of 6 GHz was obtained for the high transparency ITO device with 3 μm fingers and gaps and with an area of 50 × 50 μm2.",

author = "Seo, {Jong Wook} and Ilesanmi Adesida and Catherine Caneau and Rajaram Bhat",

note = "Funding Information: Manuscript received June 14, 1993; revised August 6, 1993. This work was supported by the National Science Foundation under Grant 89-43166. J.-W. Seo and I. Adesida are with the Center for Compound Semiconductor Microelectronics and Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801. C. Caneau and R. Bhat are with Bell Communications Research, Red Bank, NJ 07701. IEEE Log Number 9212590.",

year = "1993",

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AU - Seo, Jong Wook

AU - Adesida, Ilesanmi

AU - Caneau, Catherine

AU - Bhat, Rajaram

N1 - Funding Information: Manuscript received June 14, 1993; revised August 6, 1993. This work was supported by the National Science Foundation under Grant 89-43166. J.-W. Seo and I. Adesida are with the Center for Compound Semiconductor Microelectronics and Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801. C. Caneau and R. Bhat are with Bell Communications Research, Red Bank, NJ 07701. IEEE Log Number 9212590.

PY - 1993/11

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N2 - The optical transmittance of indium-tin-oxide (ITO) at a wavelength of 1.3 pm has been improved by adding forming gas (H2/N2) to the Ar sputtering gas. It is shown that the presence of H2 in the plasma decreases the carrier concentration in ITO, and increases the optical transmittance of a 320 nm-thick ITO film from 69.7% to 99.5%. The application of the high transmittance ITO to the fabrication of metal-semiconductor-metal (MSM) photodiodes on InAlAs/InGaAs heterostructures has resulted in an improvement of responsivity from 0.6 A/W to 0.76 A/W. This is double the responsivity of 0.39 A/W obtained for Ti/Au detectors. A 3-dB bandwidth of 6 GHz was obtained for the high transparency ITO device with 3 μm fingers and gaps and with an area of 50 × 50 μm2.

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Application of indium-tin-oxide with improved transmittance at 1.3 μm for MSM photodetectors

Abstract

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