Application of indium-tin-oxide with improved transmittance at 1.3 μm for MSM photodetectors

Jong Wook Seo, Ilesanmi Adesida, Catherine Caneau, Rajaram Bhat

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

The optical transmittance of indium-tin-oxide (ITO) at a wavelength of 1.3 pm has been improved by adding forming gas (H2/N2) to the Ar sputtering gas. It is shown that the presence of H2 in the plasma decreases the carrier concentration in ITO, and increases the optical transmittance of a 320 nm-thick ITO film from 69.7% to 99.5%. The application of the high transmittance ITO to the fabrication of metal-semiconductor-metal (MSM) photodiodes on InAlAs/InGaAs heterostructures has resulted in an improvement of responsivity from 0.6 A/W to 0.76 A/W. This is double the responsivity of 0.39 A/W obtained for Ti/Au detectors. A 3-dB bandwidth of 6 GHz was obtained for the high transparency ITO device with 3 μm fingers and gaps and with an area of 50 × 50 μm2.

Original languageEnglish
Pages (from-to)1313-1315
Number of pages3
JournalIEEE Photonics Technology Letters
Volume5
Issue number11
DOIs
Publication statusPublished - 1993
Externally publishedYes

Fingerprint

Photodetectors
Tin oxides
indium oxides
Indium
tin oxides
photometers
transmittance
Metals
Semiconductor materials
metals
Opacity
Gases
Photodiodes
gases
Transparency
Oxide films
photodiodes
Carrier concentration
Sputtering
oxide films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Application of indium-tin-oxide with improved transmittance at 1.3 μm for MSM photodetectors. / Seo, Jong Wook; Adesida, Ilesanmi; Caneau, Catherine; Bhat, Rajaram.

In: IEEE Photonics Technology Letters, Vol. 5, No. 11, 1993, p. 1313-1315.

Research output: Contribution to journalArticle

Seo, Jong Wook ; Adesida, Ilesanmi ; Caneau, Catherine ; Bhat, Rajaram. / Application of indium-tin-oxide with improved transmittance at 1.3 μm for MSM photodetectors. In: IEEE Photonics Technology Letters. 1993 ; Vol. 5, No. 11. pp. 1313-1315.
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