Application of indium-tin-oxide with improved transmittance at 1.3 μm for MSM photodetectors

Jong Wook Seo; Ilesanmi Adesida; Catherine Caneau; Rajaram Bhat

doi:10.1109/68.250054

Application of indium-tin-oxide with improved transmittance at 1.3 μm for MSM photodetectors

Jong Wook Seo, Ilesanmi Adesida, Catherine Caneau, Rajaram Bhat

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

The optical transmittance of indium-tin-oxide (ITO) at a wavelength of 1.3 pm has been improved by adding forming gas (H₂/N₂) to the Ar sputtering gas. It is shown that the presence of H₂ in the plasma decreases the carrier concentration in ITO, and increases the optical transmittance of a 320 nm-thick ITO film from 69.7% to 99.5%. The application of the high transmittance ITO to the fabrication of metal-semiconductor-metal (MSM) photodiodes on InAlAs/InGaAs heterostructures has resulted in an improvement of responsivity from 0.6 A/W to 0.76 A/W. This is double the responsivity of 0.39 A/W obtained for Ti/Au detectors. A 3-dB bandwidth of 6 GHz was obtained for the high transparency ITO device with 3 μm fingers and gaps and with an area of 50 × 50 μm².

Original language	English
Pages (from-to)	1313-1315
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	5
Issue number	11
DOIs	https://doi.org/10.1109/68.250054
Publication status	Published - Nov 1993
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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title = "Application of indium-tin-oxide with improved transmittance at 1.3 μm for MSM photodetectors",

abstract = "The optical transmittance of indium-tin-oxide (ITO) at a wavelength of 1.3 pm has been improved by adding forming gas (H2/N2) to the Ar sputtering gas. It is shown that the presence of H2 in the plasma decreases the carrier concentration in ITO, and increases the optical transmittance of a 320 nm-thick ITO film from 69.7% to 99.5%. The application of the high transmittance ITO to the fabrication of metal-semiconductor-metal (MSM) photodiodes on InAlAs/InGaAs heterostructures has resulted in an improvement of responsivity from 0.6 A/W to 0.76 A/W. This is double the responsivity of 0.39 A/W obtained for Ti/Au detectors. A 3-dB bandwidth of 6 GHz was obtained for the high transparency ITO device with 3 μm fingers and gaps and with an area of 50 × 50 μm2.",

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T1 - Application of indium-tin-oxide with improved transmittance at 1.3 μm for MSM photodetectors

AU - Seo, Jong Wook

AU - Adesida, Ilesanmi

AU - Caneau, Catherine

AU - Bhat, Rajaram

PY - 1993/11

Y1 - 1993/11

N2 - The optical transmittance of indium-tin-oxide (ITO) at a wavelength of 1.3 pm has been improved by adding forming gas (H2/N2) to the Ar sputtering gas. It is shown that the presence of H2 in the plasma decreases the carrier concentration in ITO, and increases the optical transmittance of a 320 nm-thick ITO film from 69.7% to 99.5%. The application of the high transmittance ITO to the fabrication of metal-semiconductor-metal (MSM) photodiodes on InAlAs/InGaAs heterostructures has resulted in an improvement of responsivity from 0.6 A/W to 0.76 A/W. This is double the responsivity of 0.39 A/W obtained for Ti/Au detectors. A 3-dB bandwidth of 6 GHz was obtained for the high transparency ITO device with 3 μm fingers and gaps and with an area of 50 × 50 μm2.

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