Application of low-frequency noise measurement as a characterization tool for laser-assisted debonding of GaN-based devices

C. P. Chan, M. Pilkuhn, C. Surya

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper we present experimental results on the development of high-performance GaN LEDs and HEMTs by laser-assisted debonding of the sapphire substrates from the GaN active layer. Detailed discussions on the process and characterizations of the electronic, optical, structural and low-frequency noise properties are presented. In particular, low-frequency noise characterization is shown to shed light on the crystalline properties of the GaN materials before and after the debonding process and is instrumental in the optimization of the debonding process. Our results show that using the optimized laser power GaN-based LEDs and HEMTs can be detached from the sapphire substrates with little degradation in the device properties. In the case of LEDs, we have investigated the application of photo-electrochemical etching of the GaN to increase surface roughness of the flip-chip bonded device. This is shown to result in over 60% improvement in the efficacy of the LEDs.

Original languageEnglish
Title of host publicationNoise and Fluctuations - 19th International Conference on Noise and Fluctuations, ICNF 2007
Pages147-152
Number of pages6
Volume922
DOIs
Publication statusPublished - Dec 1 2007
Externally publishedYes
Event19th International Conference on Noise and Fluctuations, ICNF2007 - Tokyo, Japan
Duration: Sep 9 2007Sep 14 2007

Publication series

NameAIP Conference Proceedings
Volume922
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference19th International Conference on Noise and Fluctuations, ICNF2007
CountryJapan
CityTokyo
Period9/9/079/14/07

Keywords

  • GaN
  • HEMTs
  • laser-assisted debonding
  • LED
  • low-frequency excess noise

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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