Application of the Ag-based ohmic contact to the realization of thermally-stable InAlAs/InGaAs/InP high electron mobility transistors

Weifeng Zhao, Fitih M. Mohammed, Ilesanmi Adesida

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1 Citation (Scopus)

Abstract

Auger electron spectroscopy analysis of Ag-based Ge/Ag/Ni ohmic contacts on InAlAs/InGaAs/InP revealed that the indiffusion of the Ag down to the semiconductor layers was necessary for the formation of excellent ohmic contact. Atomic force microscopy characterization of the surface morphology showed that the root mean square roughness of the ohmic contact after annealing was as small as 3.0 nm. High electron mobility transistors with a gate length of 0.2μm fabricated utilizing Ag-based ohmic contact showed excellent DC and RF characteristics including: gm,max of 835 mS/mm, ID,max of 813mA/mm, fT of 156GHz, and fmax of 245GHz. Due to the stable property of the Ag-based source and drain ohmic contacts, these devices were shown to be thermally stable through preliminary thermal storage tests at 215°C.

Original languageEnglish
Pages (from-to)7632-7636
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Volume45
Issue number10 A
DOIs
Publication statusPublished - Oct 15 2006
Externally publishedYes

Fingerprint

Ohmic contacts
High electron mobility transistors
high electron mobility transistors
electric contacts
Auger electron spectroscopy
Auger spectroscopy
Surface morphology
electron spectroscopy
Atomic force microscopy
roughness
Surface roughness
direct current
atomic force microscopy
Annealing
Semiconductor materials
annealing

Keywords

  • Ag-based
  • Auger electron spectroscopy
  • High electron mobility transistor
  • Indium aluminum arsenide
  • Indium gallium arsenide
  • Ohmic contact
  • Thermal stability

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

@article{d18ff39cb066467581738157a5c7c576,
title = "Application of the Ag-based ohmic contact to the realization of thermally-stable InAlAs/InGaAs/InP high electron mobility transistors",
abstract = "Auger electron spectroscopy analysis of Ag-based Ge/Ag/Ni ohmic contacts on InAlAs/InGaAs/InP revealed that the indiffusion of the Ag down to the semiconductor layers was necessary for the formation of excellent ohmic contact. Atomic force microscopy characterization of the surface morphology showed that the root mean square roughness of the ohmic contact after annealing was as small as 3.0 nm. High electron mobility transistors with a gate length of 0.2μm fabricated utilizing Ag-based ohmic contact showed excellent DC and RF characteristics including: gm,max of 835 mS/mm, ID,max of 813mA/mm, fT of 156GHz, and fmax of 245GHz. Due to the stable property of the Ag-based source and drain ohmic contacts, these devices were shown to be thermally stable through preliminary thermal storage tests at 215°C.",
keywords = "Ag-based, Auger electron spectroscopy, High electron mobility transistor, Indium aluminum arsenide, Indium gallium arsenide, Ohmic contact, Thermal stability",
author = "Weifeng Zhao and Mohammed, {Fitih M.} and Ilesanmi Adesida",
year = "2006",
month = "10",
day = "15",
doi = "10.1143/JJAP.45.7632",
language = "English",
volume = "45",
pages = "7632--7636",
journal = "Japanese Journal of Applied Physics",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "10 A",

}

TY - JOUR

T1 - Application of the Ag-based ohmic contact to the realization of thermally-stable InAlAs/InGaAs/InP high electron mobility transistors

AU - Zhao, Weifeng

AU - Mohammed, Fitih M.

AU - Adesida, Ilesanmi

PY - 2006/10/15

Y1 - 2006/10/15

N2 - Auger electron spectroscopy analysis of Ag-based Ge/Ag/Ni ohmic contacts on InAlAs/InGaAs/InP revealed that the indiffusion of the Ag down to the semiconductor layers was necessary for the formation of excellent ohmic contact. Atomic force microscopy characterization of the surface morphology showed that the root mean square roughness of the ohmic contact after annealing was as small as 3.0 nm. High electron mobility transistors with a gate length of 0.2μm fabricated utilizing Ag-based ohmic contact showed excellent DC and RF characteristics including: gm,max of 835 mS/mm, ID,max of 813mA/mm, fT of 156GHz, and fmax of 245GHz. Due to the stable property of the Ag-based source and drain ohmic contacts, these devices were shown to be thermally stable through preliminary thermal storage tests at 215°C.

AB - Auger electron spectroscopy analysis of Ag-based Ge/Ag/Ni ohmic contacts on InAlAs/InGaAs/InP revealed that the indiffusion of the Ag down to the semiconductor layers was necessary for the formation of excellent ohmic contact. Atomic force microscopy characterization of the surface morphology showed that the root mean square roughness of the ohmic contact after annealing was as small as 3.0 nm. High electron mobility transistors with a gate length of 0.2μm fabricated utilizing Ag-based ohmic contact showed excellent DC and RF characteristics including: gm,max of 835 mS/mm, ID,max of 813mA/mm, fT of 156GHz, and fmax of 245GHz. Due to the stable property of the Ag-based source and drain ohmic contacts, these devices were shown to be thermally stable through preliminary thermal storage tests at 215°C.

KW - Ag-based

KW - Auger electron spectroscopy

KW - High electron mobility transistor

KW - Indium aluminum arsenide

KW - Indium gallium arsenide

KW - Ohmic contact

KW - Thermal stability

UR - http://www.scopus.com/inward/record.url?scp=34547912531&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547912531&partnerID=8YFLogxK

U2 - 10.1143/JJAP.45.7632

DO - 10.1143/JJAP.45.7632

M3 - Article

VL - 45

SP - 7632

EP - 7636

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 10 A

ER -