Atomic layer deposition for TiO2 and TiN nanometer films

Zeke Insepov, Ardak Ainabayev, Farabi Bozheyev, Abat Zhuldassov, Maria Lukasheva, Kurbangali B. Tynyshtykbaev

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


In this work processes of atomic layer deposition (ALD) of TiO2 and TiN using ALD method and impact of thickness and composition of grown film on stoichiometry and morphology of deposited layer are investigated. It is shown, that with increasing ALD cycles the deposition of a thin metal layer on the back inactive side of the silicon substrate is observed and the roughness on the active surface of deposited metal layer is decreased.

Original languageEnglish
Pages (from-to)11630-11639
Number of pages10
JournalMaterials Today: Proceedings
Issue number11
Publication statusPublished - 2017
Externally publishedYes


  • Atomic layer deposition
  • Morphology
  • Roughness
  • Silicon layer
  • Surface
  • Titanium nitride

ASJC Scopus subject areas

  • Materials Science(all)

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