Atomic layer deposition for TiO2 and TiN nanometer films

Zeke Insepov; Ardak Ainabayev; Farabi Bozheyev; Abat Zhuldassov; Maria Lukasheva; Kurbangali B. Tynyshtykbaev

doi:10.1016/j.matpr.2017.09.075

Atomic layer deposition for TiO₂ and TiN nanometer films

Zeke Insepov, Ardak Ainabayev, Farabi Bozheyev, Abat Zhuldassov, Maria Lukasheva, Kurbangali B. Tynyshtykbaev

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

In this work processes of atomic layer deposition (ALD) of TiO₂ and TiN using ALD method and impact of thickness and composition of grown film on stoichiometry and morphology of deposited layer are investigated. It is shown, that with increasing ALD cycles the deposition of a thin metal layer on the back inactive side of the silicon substrate is observed and the roughness on the active surface of deposited metal layer is decreased.

Original language	English
Pages (from-to)	11630-11639
Number of pages	10
Journal	Materials Today: Proceedings
Volume	4
Issue number	11
DOIs	https://doi.org/10.1016/j.matpr.2017.09.075
Publication status	Published - 2017
Externally published	Yes

Keywords

Atomic layer deposition
Morphology
Roughness
Silicon layer
Surface
Titanium nitride

ASJC Scopus subject areas

Materials Science(all)

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title = "Atomic layer deposition for TiO2 and TiN nanometer films",

abstract = "In this work processes of atomic layer deposition (ALD) of TiO2 and TiN using ALD method and impact of thickness and composition of grown film on stoichiometry and morphology of deposited layer are investigated. It is shown, that with increasing ALD cycles the deposition of a thin metal layer on the back inactive side of the silicon substrate is observed and the roughness on the active surface of deposited metal layer is decreased.",

keywords = "Atomic layer deposition, Morphology, Roughness, Silicon layer, Surface, Titanium nitride",

author = "Zeke Insepov and Ardak Ainabayev and Farabi Bozheyev and Abat Zhuldassov and Maria Lukasheva and Tynyshtykbaev, {Kurbangali B.}",

note = "Funding Information: This work was funded in part by the Nazarbayev University World Science Stars program, under Grant No. 031-2013 of 12/3/2013, by the Ministry of Education and Science of the Republic of Kazakhstan contract № 265 of 12.02.2015. Publisher Copyright: {\textcopyright} 2016 Elsevier Ltd. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.",

year = "2017",

doi = "10.1016/j.matpr.2017.09.075",

language = "English",

volume = "4",

pages = "11630--11639",

journal = "Materials Today: Proceedings",

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number = "11",

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TY - JOUR

T1 - Atomic layer deposition for TiO2 and TiN nanometer films

AU - Insepov, Zeke

AU - Ainabayev, Ardak

AU - Bozheyev, Farabi

AU - Zhuldassov, Abat

AU - Lukasheva, Maria

AU - Tynyshtykbaev, Kurbangali B.

N1 - Funding Information: This work was funded in part by the Nazarbayev University World Science Stars program, under Grant No. 031-2013 of 12/3/2013, by the Ministry of Education and Science of the Republic of Kazakhstan contract № 265 of 12.02.2015. Publisher Copyright: © 2016 Elsevier Ltd. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.

PY - 2017

Y1 - 2017

N2 - In this work processes of atomic layer deposition (ALD) of TiO2 and TiN using ALD method and impact of thickness and composition of grown film on stoichiometry and morphology of deposited layer are investigated. It is shown, that with increasing ALD cycles the deposition of a thin metal layer on the back inactive side of the silicon substrate is observed and the roughness on the active surface of deposited metal layer is decreased.

AB - In this work processes of atomic layer deposition (ALD) of TiO2 and TiN using ALD method and impact of thickness and composition of grown film on stoichiometry and morphology of deposited layer are investigated. It is shown, that with increasing ALD cycles the deposition of a thin metal layer on the back inactive side of the silicon substrate is observed and the roughness on the active surface of deposited metal layer is decreased.

KW - Atomic layer deposition

KW - Morphology

KW - Roughness

KW - Silicon layer

KW - Surface

KW - Titanium nitride

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