TY - JOUR
T1 - Averaged equations for injection locked semiconductor lasers
AU - Nizette, Michel
AU - Erneux, Thomas
AU - Gavrielides, Athanasios
AU - Kovanis, Vassilios
N1 - Funding Information:
The research was supported by the US Air Force Office of Scientific Research grant AFOSR F49620-98-1-0400, the National Science Foundation grant DMS-9973203, the Fonds National de la Recherche Scientifique (Belgium) and the Interuniversity Attraction Pole program of the Belgian government.
PY - 2002/1/15
Y1 - 2002/1/15
N2 - An averaging method valid for strongly nonlinear oscillators is used for the first time to describe the pulsating intensity regimes of semiconductor lasers subject to injection. Slow-time equations are derived which are valid for solutions of arbitrary amplitude. These averaged equations do not require the knowledge of a particular bifurcation point and are a good starting point for further analysis. Bifurcation points to periodic or quasiperiodic intensity oscillations are determined analytically by exploring certain limits of the parameters. Finally, we illustrate the strength and weakness of these expressions by comparing bifurcation diagrams obtained from the averaged equations and from the original laser equations.
AB - An averaging method valid for strongly nonlinear oscillators is used for the first time to describe the pulsating intensity regimes of semiconductor lasers subject to injection. Slow-time equations are derived which are valid for solutions of arbitrary amplitude. These averaged equations do not require the knowledge of a particular bifurcation point and are a good starting point for further analysis. Bifurcation points to periodic or quasiperiodic intensity oscillations are determined analytically by exploring certain limits of the parameters. Finally, we illustrate the strength and weakness of these expressions by comparing bifurcation diagrams obtained from the averaged equations and from the original laser equations.
KW - Averaged equations
KW - Hopf and torus bifurcations
KW - Injection locked semiconductor
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U2 - 10.1016/S0167-2789(01)00375-X
DO - 10.1016/S0167-2789(01)00375-X
M3 - Article
AN - SCOPUS:0037080378
VL - 161
SP - 220
EP - 236
JO - Physica D: Nonlinear Phenomena
JF - Physica D: Nonlinear Phenomena
SN - 0167-2789
IS - 3-4
ER -