Averaged equations for injection locked semiconductor lasers

Michel Nizette, Thomas Erneux, Athanasios Gavrielides, Vassilios Kovanis

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

An averaging method valid for strongly nonlinear oscillators is used for the first time to describe the pulsating intensity regimes of semiconductor lasers subject to injection. Slow-time equations are derived which are valid for solutions of arbitrary amplitude. These averaged equations do not require the knowledge of a particular bifurcation point and are a good starting point for further analysis. Bifurcation points to periodic or quasiperiodic intensity oscillations are determined analytically by exploring certain limits of the parameters. Finally, we illustrate the strength and weakness of these expressions by comparing bifurcation diagrams obtained from the averaged equations and from the original laser equations.

Original languageEnglish
Pages (from-to)220-236
Number of pages17
JournalPhysica D: Nonlinear Phenomena
Volume161
Issue number3-4
DOIs
Publication statusPublished - Jan 15 2002
Externally publishedYes

Keywords

  • Averaged equations
  • Hopf and torus bifurcations
  • Injection locked semiconductor

ASJC Scopus subject areas

  • Statistical and Nonlinear Physics
  • Mathematical Physics
  • Condensed Matter Physics
  • Applied Mathematics

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