Bendable GaAs metal-semiconductor field-effect transistors formed with printed GaAs wire arrays on plastic substrates

Yugang Sun, Seiyon Kim, Ilesanmi Adesida, John A. Rogers

Research output: Contribution to journalArticlepeer-review

59 Citations (Scopus)

Abstract

Micro/nanowires of GaAs with integrated ohmic contacts have been prepared from bulk wafers by metal deposition and patterning, high-temperature annealing, and anisotropic chemical etching. These wires provide a unique type of material for high-performance devices that can be built directly on a wide range of unusual device substrates, such as plastic or paper. In particular, transfer printing organized arrays of these wires at low temperatures onto plastic substrates yield high-quality bendable metal-semiconductor field-effect transistors. Electrical and mechanical characterization of devices on poly(ethylene terephthalate) illustrates the level of performance that can be achieved. These results indicate promise for this approach to high-speed flexible circuits for emerging applications in consumer and military electronic systems.

Original languageEnglish
Article number083501
JournalApplied Physics Letters
Volume87
Issue number8
DOIs
Publication statusPublished - Aug 22 2005

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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