Boundary processes in the electrolyte–silicon interface area during the self-organization of the mosaic structure of 3D islets of porous silicon nanocrystallites in the long-term anode etching of p-Si (100) in electrolyte with an internal current source

K. B. Tynyshtykbaev, Yu A. Ryabikin, S. Zh Tokmoldin, B. A. Rakymetov, T. Aytmukan, Kh A. Abdullin

Research output: Contribution to journalArticle

Abstract

The formation and self-organization of a porous silicon (por-Si) surface mosaic structure in the long-term anodic etching of p-type conductivity Si (100) (p-Si) in electrolytes with an internal power source is considered. We show that the formation of 3D islets of mosaic structure nanocrystallites of por-Si occurs with the participation of the adsorbed deposited silicon atoms formed as a result of disporportionation reactions during the etching of silicon single crystals, as in the case of the epitaxial growth of nanocrystallites by molecular beam deposition of silicon atoms on the AIIIBV and Si semiconductor surface and their further spontaneous self-organization. The quantum-size effects occurring in the local areas of the atomically rough surfaces of a real silicon crystal are taken into account. We note the significant role of oxidation of the silicon surface in the formation and self-organization of a mosaic structure of por-Si during long-term anodic etching of p-Si (100) in the HF: H2O2 electrolyte.

Original languageEnglish
Pages (from-to)559-563
Number of pages5
JournalRussian Microelectronics
Volume44
Issue number8
DOIs
Publication statusPublished - Dec 1 2015
Externally publishedYes

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Keywords

  • interface
  • porous silicon
  • self-organization

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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