Abstract
Selective-area growth (SAG) based on plasma-assisted molecular-beam epitaxy (PAMBE) was shown to facilitate improvement of Ohmic contacts and direct-current (DC) characteristics for GaN-based field-effect transistors (FETs) over the widely accepted ion-implantation technique. Twofold improvements in breakdown voltage were also demonstrated for samples grown on both sapphire and silicon substrates. An AlGaN/GaN high-electron-mobility transistor (HEMT) fabricated with PAMBE-SAG exhibited a low specific contact resistivity of 5.86 × 10-7 Ω cm2, peak drain current of 420 mA/mm, and high breakdown voltage of 77 V. These results demonstrate that PAMBE-SAG is suited to fabricating HEMTs for high-power applications.
| Original language | English |
|---|---|
| Pages (from-to) | 499-503 |
| Number of pages | 5 |
| Journal | Journal of Electronic Materials |
| Volume | 39 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - May 2010 |
| Externally published | Yes |
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Keywords
- Breakdown voltage
- Gallium nitride
- Ohmic contact
- Plasma-assisted molecular-beam epitaxy
- Selective-area growth
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
Cite this
Breakdown voltage enhancement of AlGaN/GaN high-electron-mobility transistors via selective-area growth for ohmic contacts over ion implantation. / Pang, Liang; Seo, Hui Chan; Chapman, Patrick; Adesida, Ilesanmi; Kim, Kyekyoon.
In: Journal of Electronic Materials, Vol. 39, No. 5, 05.2010, p. 499-503.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Breakdown voltage enhancement of AlGaN/GaN high-electron-mobility transistors via selective-area growth for ohmic contacts over ion implantation
AU - Pang, Liang
AU - Seo, Hui Chan
AU - Chapman, Patrick
AU - Adesida, Ilesanmi
AU - Kim, Kyekyoon
PY - 2010/5
Y1 - 2010/5
N2 - Selective-area growth (SAG) based on plasma-assisted molecular-beam epitaxy (PAMBE) was shown to facilitate improvement of Ohmic contacts and direct-current (DC) characteristics for GaN-based field-effect transistors (FETs) over the widely accepted ion-implantation technique. Twofold improvements in breakdown voltage were also demonstrated for samples grown on both sapphire and silicon substrates. An AlGaN/GaN high-electron-mobility transistor (HEMT) fabricated with PAMBE-SAG exhibited a low specific contact resistivity of 5.86 × 10-7 Ω cm2, peak drain current of 420 mA/mm, and high breakdown voltage of 77 V. These results demonstrate that PAMBE-SAG is suited to fabricating HEMTs for high-power applications.
AB - Selective-area growth (SAG) based on plasma-assisted molecular-beam epitaxy (PAMBE) was shown to facilitate improvement of Ohmic contacts and direct-current (DC) characteristics for GaN-based field-effect transistors (FETs) over the widely accepted ion-implantation technique. Twofold improvements in breakdown voltage were also demonstrated for samples grown on both sapphire and silicon substrates. An AlGaN/GaN high-electron-mobility transistor (HEMT) fabricated with PAMBE-SAG exhibited a low specific contact resistivity of 5.86 × 10-7 Ω cm2, peak drain current of 420 mA/mm, and high breakdown voltage of 77 V. These results demonstrate that PAMBE-SAG is suited to fabricating HEMTs for high-power applications.
KW - Breakdown voltage
KW - Gallium nitride
KW - Ohmic contact
KW - Plasma-assisted molecular-beam epitaxy
KW - Selective-area growth
UR - http://www.scopus.com/inward/record.url?scp=77954623433&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77954623433&partnerID=8YFLogxK
U2 - 10.1007/s11664-010-1139-y
DO - 10.1007/s11664-010-1139-y
M3 - Article
AN - SCOPUS:77954623433
VL - 39
SP - 499
EP - 503
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
SN - 0361-5235
IS - 5
ER -