Breakdown voltage enhancement of AlGaN/GaN high-electron-mobility transistors via selective-area growth for ohmic contacts over ion implantation

Liang Pang, Hui Chan Seo, Patrick Chapman, Ilesanmi Adesida, Kyekyoon Kim

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Selective-area growth (SAG) based on plasma-assisted molecular-beam epitaxy (PAMBE) was shown to facilitate improvement of Ohmic contacts and direct-current (DC) characteristics for GaN-based field-effect transistors (FETs) over the widely accepted ion-implantation technique. Twofold improvements in breakdown voltage were also demonstrated for samples grown on both sapphire and silicon substrates. An AlGaN/GaN high-electron-mobility transistor (HEMT) fabricated with PAMBE-SAG exhibited a low specific contact resistivity of 5.86 × 10-7 Ω cm2, peak drain current of 420 mA/mm, and high breakdown voltage of 77 V. These results demonstrate that PAMBE-SAG is suited to fabricating HEMTs for high-power applications.

Original languageEnglish
Pages (from-to)499-503
Number of pages5
JournalJournal of Electronic Materials
Volume39
Issue number5
DOIs
Publication statusPublished - May 2010
Externally publishedYes

Fingerprint

Ohmic contacts
High electron mobility transistors
high electron mobility transistors
Electric breakdown
electrical faults
Molecular beam epitaxy
Ion implantation
ion implantation
electric contacts
molecular beam epitaxy
Plasmas
augmentation
Aluminum Oxide
Drain current
Silicon
Field effect transistors
Sapphire
sapphire
field effect transistors
direct current

Keywords

  • Breakdown voltage
  • Gallium nitride
  • Ohmic contact
  • Plasma-assisted molecular-beam epitaxy
  • Selective-area growth

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Breakdown voltage enhancement of AlGaN/GaN high-electron-mobility transistors via selective-area growth for ohmic contacts over ion implantation. / Pang, Liang; Seo, Hui Chan; Chapman, Patrick; Adesida, Ilesanmi; Kim, Kyekyoon.

In: Journal of Electronic Materials, Vol. 39, No. 5, 05.2010, p. 499-503.

Research output: Contribution to journalArticle

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