Abstract
Selective-area growth (SAG) based on plasma-assisted molecular-beam epitaxy (PAMBE) was shown to facilitate improvement of Ohmic contacts and direct-current (DC) characteristics for GaN-based field-effect transistors (FETs) over the widely accepted ion-implantation technique. Twofold improvements in breakdown voltage were also demonstrated for samples grown on both sapphire and silicon substrates. An AlGaN/GaN high-electron-mobility transistor (HEMT) fabricated with PAMBE-SAG exhibited a low specific contact resistivity of 5.86 × 10-7 Ω cm2, peak drain current of 420 mA/mm, and high breakdown voltage of 77 V. These results demonstrate that PAMBE-SAG is suited to fabricating HEMTs for high-power applications.
Original language | English |
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Pages (from-to) | 499-503 |
Number of pages | 5 |
Journal | Journal of Electronic Materials |
Volume | 39 |
Issue number | 5 |
DOIs | |
Publication status | Published - May 1 2010 |
Keywords
- Breakdown voltage
- Gallium nitride
- Ohmic contact
- Plasma-assisted molecular-beam epitaxy
- Selective-area growth
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry