Breakdown voltage enhancement of AlGaN/GaN high-electron-mobility transistors via selective-area growth for ohmic contacts over ion implantation

Liang Pang, Hui Chan Seo, Patrick Chapman, Ilesanmi Adesida, Kyekyoon Kim

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

Selective-area growth (SAG) based on plasma-assisted molecular-beam epitaxy (PAMBE) was shown to facilitate improvement of Ohmic contacts and direct-current (DC) characteristics for GaN-based field-effect transistors (FETs) over the widely accepted ion-implantation technique. Twofold improvements in breakdown voltage were also demonstrated for samples grown on both sapphire and silicon substrates. An AlGaN/GaN high-electron-mobility transistor (HEMT) fabricated with PAMBE-SAG exhibited a low specific contact resistivity of 5.86 × 10-7 Ω cm2, peak drain current of 420 mA/mm, and high breakdown voltage of 77 V. These results demonstrate that PAMBE-SAG is suited to fabricating HEMTs for high-power applications.

Original languageEnglish
Pages (from-to)499-503
Number of pages5
JournalJournal of Electronic Materials
Volume39
Issue number5
DOIs
Publication statusPublished - May 1 2010

Keywords

  • Breakdown voltage
  • Gallium nitride
  • Ohmic contact
  • Plasma-assisted molecular-beam epitaxy
  • Selective-area growth

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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