Abstract
The latest breakthroughs on the frontiers of semiconductor laser capabilities are presented. Achievements including the impressive advances in high-speed lasers with low pJ/bit energy consumption, high-power vertical external cavity surface emitting lasers (VECSELs), advances in Ill-nitrides, record-high temperature operation quantum dot lasers, the longest wavelength Type-I quantum well lasers to date, and the fascinating field of nanolasers with ultralow volume and threshold are all discussed.
Original language | English |
---|---|
Article number | 6251844 |
Pages (from-to) | 565-569 |
Number of pages | 5 |
Journal | IEEE Photonics Journal |
Volume | 4 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2012 |
Keywords
- III-nitrides
- Mid-infrared (IR) lasers
- Nanolasers
- Quantum dots (QDs)
- Semiconductor lasers
- Vertical cavity surface emitting lasers (VCSELs)
- Vertical external cavity surface emitting lasers (VECSELs)
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering