Breakthroughs in semiconductor lasers

Mark T. Crowley; Vassilios Kovanis; Luke F. Lester

doi:10.1109/JPHOT.2012.2190499

Breakthroughs in semiconductor lasers

Mark T. Crowley, Vassilios Kovanis, Luke F. Lester

Department of Physics

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The latest breakthroughs on the frontiers of semiconductor laser capabilities are presented. Achievements including the impressive advances in high-speed lasers with low pJ/bit energy consumption, high-power vertical external cavity surface emitting lasers (VECSELs), advances in Ill-nitrides, record-high temperature operation quantum dot lasers, the longest wavelength Type-I quantum well lasers to date, and the fascinating field of nanolasers with ultralow volume and threshold are all discussed.

Original language	English
Article number	6251844
Pages (from-to)	565-569
Number of pages	5
Journal	IEEE Photonics Journal
Volume	4
Issue number	2
DOIs	https://doi.org/10.1109/JPHOT.2012.2190499
Publication status	Published - 2012

Keywords

III-nitrides
Mid-infrared (IR) lasers
Nanolasers
Quantum dots (QDs)
Semiconductor lasers
Vertical cavity surface emitting lasers (VCSELs)
Vertical external cavity surface emitting lasers (VECSELs)

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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title = "Breakthroughs in semiconductor lasers",

abstract = "The latest breakthroughs on the frontiers of semiconductor laser capabilities are presented. Achievements including the impressive advances in high-speed lasers with low pJ/bit energy consumption, high-power vertical external cavity surface emitting lasers (VECSELs), advances in Ill-nitrides, record-high temperature operation quantum dot lasers, the longest wavelength Type-I quantum well lasers to date, and the fascinating field of nanolasers with ultralow volume and threshold are all discussed.",

keywords = "III-nitrides, Mid-infrared (IR) lasers, Nanolasers, Quantum dots (QDs), Semiconductor lasers, Vertical cavity surface emitting lasers (VCSELs), Vertical external cavity surface emitting lasers (VECSELs)",

author = "Crowley, {Mark T.} and Vassilios Kovanis and Lester, {Luke F.}",

note = "Funding Information: 1Such developments were supported by the DARPA Nanoscale Architecture for Coherent Hyper-Optic Sources (NACHOS) program established by the late H. Temkin.",

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AU - Crowley, Mark T.

AU - Kovanis, Vassilios

AU - Lester, Luke F.

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AB - The latest breakthroughs on the frontiers of semiconductor laser capabilities are presented. Achievements including the impressive advances in high-speed lasers with low pJ/bit energy consumption, high-power vertical external cavity surface emitting lasers (VECSELs), advances in Ill-nitrides, record-high temperature operation quantum dot lasers, the longest wavelength Type-I quantum well lasers to date, and the fascinating field of nanolasers with ultralow volume and threshold are all discussed.

KW - III-nitrides

KW - Mid-infrared (IR) lasers

KW - Nanolasers

KW - Quantum dots (QDs)

KW - Semiconductor lasers

KW - Vertical cavity surface emitting lasers (VCSELs)

KW - Vertical external cavity surface emitting lasers (VECSELs)

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Breakthroughs in semiconductor lasers

Abstract

Keywords

ASJC Scopus subject areas

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