Breakthroughs in semiconductor lasers

Mark T. Crowley, Vassilios Kovanis, Luke F. Lester

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

The latest breakthroughs on the frontiers of semiconductor laser capabilities are presented. Achievements including the impressive advances in high-speed lasers with low pJ/bit energy consumption, high-power vertical external cavity surface emitting lasers (VECSELs), advances in Ill-nitrides, record-high temperature operation quantum dot lasers, the longest wavelength Type-I quantum well lasers to date, and the fascinating field of nanolasers with ultralow volume and threshold are all discussed.

Original languageEnglish
Article number6251844
Pages (from-to)565-569
Number of pages5
JournalIEEE Photonics Journal
Volume4
Issue number2
DOIs
Publication statusPublished - 2012

Keywords

  • III-nitrides
  • Mid-infrared (IR) lasers
  • Nanolasers
  • Quantum dots (QDs)
  • Semiconductor lasers
  • Vertical cavity surface emitting lasers (VCSELs)
  • Vertical external cavity surface emitting lasers (VECSELs)

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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