Abstract
The latest breakthroughs on the frontiers of semiconductor laser capabilities are presented. Achievements including the impressive advances in high-speed lasers with low pJ/bit energy consumption, high-power vertical external cavity surface emitting lasers (VECSELs), advances in Ill-nitrides, record-high temperature operation quantum dot lasers, the longest wavelength Type-I quantum well lasers to date, and the fascinating field of nanolasers with ultralow volume and threshold are all discussed.
| Original language | English |
|---|---|
| Article number | 6251844 |
| Pages (from-to) | 565-569 |
| Number of pages | 5 |
| Journal | IEEE Photonics Journal |
| Volume | 4 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2012 |
| Externally published | Yes |
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Keywords
- III-nitrides
- Mid-infrared (IR) lasers
- Nanolasers
- Quantum dots (QDs)
- Semiconductor lasers
- Vertical cavity surface emitting lasers (VCSELs)
- Vertical external cavity surface emitting lasers (VECSELs)
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Atomic and Molecular Physics, and Optics
Cite this
Breakthroughs in semiconductor lasers. / Crowley, Mark T.; Kovanis, Vassilios; Lester, Luke F.
In: IEEE Photonics Journal, Vol. 4, No. 2, 6251844, 2012, p. 565-569.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Breakthroughs in semiconductor lasers
AU - Crowley, Mark T.
AU - Kovanis, Vassilios
AU - Lester, Luke F.
PY - 2012
Y1 - 2012
N2 - The latest breakthroughs on the frontiers of semiconductor laser capabilities are presented. Achievements including the impressive advances in high-speed lasers with low pJ/bit energy consumption, high-power vertical external cavity surface emitting lasers (VECSELs), advances in Ill-nitrides, record-high temperature operation quantum dot lasers, the longest wavelength Type-I quantum well lasers to date, and the fascinating field of nanolasers with ultralow volume and threshold are all discussed.
AB - The latest breakthroughs on the frontiers of semiconductor laser capabilities are presented. Achievements including the impressive advances in high-speed lasers with low pJ/bit energy consumption, high-power vertical external cavity surface emitting lasers (VECSELs), advances in Ill-nitrides, record-high temperature operation quantum dot lasers, the longest wavelength Type-I quantum well lasers to date, and the fascinating field of nanolasers with ultralow volume and threshold are all discussed.
KW - III-nitrides
KW - Mid-infrared (IR) lasers
KW - Nanolasers
KW - Quantum dots (QDs)
KW - Semiconductor lasers
KW - Vertical cavity surface emitting lasers (VCSELs)
KW - Vertical external cavity surface emitting lasers (VECSELs)
UR - http://www.scopus.com/inward/record.url?scp=84865443956&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84865443956&partnerID=8YFLogxK
U2 - 10.1109/JPHOT.2012.2190499
DO - 10.1109/JPHOT.2012.2190499
M3 - Article
AN - SCOPUS:84865443956
VL - 4
SP - 565
EP - 569
JO - IEEE Photonics Journal
JF - IEEE Photonics Journal
SN - 1943-0655
IS - 2
M1 - 6251844
ER -