Broad-area photoelectrochemical etching of GaN

C. Youtsey, I. Adesida, G. Bulman

Research output: Contribution to journalArticle

46 Citations (Scopus)

Abstract

A photoenhanced wet chemical etching process for GaN using KOH solution and broad-area Hg lamp illumination is demonstrated. Results are discussed for n+ GaN, non-intentionally doped GaN, and p-GaN samples.

Original languageEnglish
Pages (from-to)245-246
Number of pages2
JournalElectronics Letters
Volume33
Issue number3
Publication statusPublished - Jan 30 1997
Externally publishedYes

Fingerprint

Wet etching
Electric lamps
Etching
Lighting

Keywords

  • Etching
  • Gallium nitride

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Youtsey, C., Adesida, I., & Bulman, G. (1997). Broad-area photoelectrochemical etching of GaN. Electronics Letters, 33(3), 245-246.

Broad-area photoelectrochemical etching of GaN. / Youtsey, C.; Adesida, I.; Bulman, G.

In: Electronics Letters, Vol. 33, No. 3, 30.01.1997, p. 245-246.

Research output: Contribution to journalArticle

Youtsey, C, Adesida, I & Bulman, G 1997, 'Broad-area photoelectrochemical etching of GaN', Electronics Letters, vol. 33, no. 3, pp. 245-246.
Youtsey C, Adesida I, Bulman G. Broad-area photoelectrochemical etching of GaN. Electronics Letters. 1997 Jan 30;33(3):245-246.
Youtsey, C. ; Adesida, I. ; Bulman, G. / Broad-area photoelectrochemical etching of GaN. In: Electronics Letters. 1997 ; Vol. 33, No. 3. pp. 245-246.
@article{1bc30deaa7b24fb9b145fce153ca227f,
title = "Broad-area photoelectrochemical etching of GaN",
abstract = "A photoenhanced wet chemical etching process for GaN using KOH solution and broad-area Hg lamp illumination is demonstrated. Results are discussed for n+ GaN, non-intentionally doped GaN, and p-GaN samples.",
keywords = "Etching, Gallium nitride",
author = "C. Youtsey and I. Adesida and G. Bulman",
year = "1997",
month = "1",
day = "30",
language = "English",
volume = "33",
pages = "245--246",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "3",

}

TY - JOUR

T1 - Broad-area photoelectrochemical etching of GaN

AU - Youtsey, C.

AU - Adesida, I.

AU - Bulman, G.

PY - 1997/1/30

Y1 - 1997/1/30

N2 - A photoenhanced wet chemical etching process for GaN using KOH solution and broad-area Hg lamp illumination is demonstrated. Results are discussed for n+ GaN, non-intentionally doped GaN, and p-GaN samples.

AB - A photoenhanced wet chemical etching process for GaN using KOH solution and broad-area Hg lamp illumination is demonstrated. Results are discussed for n+ GaN, non-intentionally doped GaN, and p-GaN samples.

KW - Etching

KW - Gallium nitride

UR - http://www.scopus.com/inward/record.url?scp=0030783570&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030783570&partnerID=8YFLogxK

M3 - Article

VL - 33

SP - 245

EP - 246

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 3

ER -