Capabilities of CdTe-Based Detectors with MoOx Contacts for Detection of X-A nd γ-Radiation

O. L. Maslyanchuk; M. M. Solovan; V. V. Brus; V. V. Kulchynsky; P. D. Maryanchuk; I. M. Fodchuk; V. A. Gnatyuk; T. Aoki; C. Potiriadis; Y. Kaissas

doi:10.1109/TNS.2017.2694701

Capabilities of CdTe-Based Detectors with MoO_x Contacts for Detection of X-A nd γ-Radiation

O. L. Maslyanchuk, M. M. Solovan, V. V. Brus, V. V. Kulchynsky, P. D. Maryanchuk, I. M. Fodchuk, V. A. Gnatyuk, T. Aoki, C. Potiriadis, Y. Kaissas

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The charge transport mechanism and spectrometric properties of the X-ray and γ-ray detectors, fabricated by the deposition of molybdenum oxide thin films onto semi-insulating p-CdTe crystals were studied. The current transport processes in the M-MoO_xp-CdTe/MoO_x-Mo structure are well described in the scope of the carrier's generation in the space-charge region and the space-charge-limited current models. The lifetime of charge carriers, the energy of hole traps, and the density of discrete trapping centers were determined from the comparison of the experimental data and calculations. Spectrometric properties of Mo-MoO_xp-CdTe/MoO_x-Mo structures were also investigated. It is shown that the investigated heterojunctions have demonstrated promising characteristics for practical application in X-ray and γ-ray detector fabrication.

Original language	English
Article number	7902236
Pages (from-to)	1168-1172
Number of pages	5
Journal	IEEE Transactions on Nuclear Science
Volume	64
Issue number	5
DOIs	https://doi.org/10.1109/TNS.2017.2694701
Publication status	Published - May 2017
Externally published	Yes

Keywords

Leakage currents
Schottky diodes
semiconductor radiation detectors
X-ray detectors

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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Capabilities of CdTe-Based Detectors with MoO_x Contacts for Detection of X-A nd γ-Radiation. / Maslyanchuk, O. L.; Solovan, M. M.; Brus, V. V.; Kulchynsky, V. V.; Maryanchuk, P. D.; Fodchuk, I. M.; Gnatyuk, V. A.; Aoki, T.; Potiriadis, C.; Kaissas, Y.

In: IEEE Transactions on Nuclear Science, Vol. 64, No. 5, 7902236, 05.2017, p. 1168-1172.

Research output: Contribution to journal › Article › peer-review

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title = "Capabilities of CdTe-Based Detectors with MoOx Contacts for Detection of X-A nd γ-Radiation",

abstract = "The charge transport mechanism and spectrometric properties of the X-ray and γ-ray detectors, fabricated by the deposition of molybdenum oxide thin films onto semi-insulating p-CdTe crystals were studied. The current transport processes in the M-MoOxp-CdTe/MoOx-Mo structure are well described in the scope of the carrier's generation in the space-charge region and the space-charge-limited current models. The lifetime of charge carriers, the energy of hole traps, and the density of discrete trapping centers were determined from the comparison of the experimental data and calculations. Spectrometric properties of Mo-MoOxp-CdTe/MoOx-Mo structures were also investigated. It is shown that the investigated heterojunctions have demonstrated promising characteristics for practical application in X-ray and γ-ray detector fabrication.",

keywords = "Leakage currents, Schottky diodes, semiconductor radiation detectors, X-ray detectors",

author = "Maslyanchuk, {O. L.} and Solovan, {M. M.} and Brus, {V. V.} and Kulchynsky, {V. V.} and Maryanchuk, {P. D.} and Fodchuk, {I. M.} and Gnatyuk, {V. A.} and T. Aoki and C. Potiriadis and Y. Kaissas",

note = "Funding Information: Manuscript received February 16, 2017; accepted April 11, 2017. Date of publication April 17, 2017; date of current version May 16, 2017. This research was supported by the NATO Science for Peace and Security Program (Project SENERA SfP-984705). The work of V. V. Brus was supported by the Alexander-von-Humboldt Foundation. (Corresponding author: O. L. Maslyanchuk.) O. L. Maslyanchuk, M. M. Solovan, P. D. Maryanchuk, I. M. Fodchuk, and V. V. Kulchynsky are with the Yury Fedkovych Chernivtsi National University, 58012 Chernivtsi, Ukraine (e-mail: emaslyanchuk@yahoo.com). Publisher Copyright: {\textcopyright} 2017 IEEE.",

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AU - Kulchynsky, V. V.

AU - Maryanchuk, P. D.

AU - Fodchuk, I. M.

AU - Gnatyuk, V. A.

AU - Aoki, T.

AU - Potiriadis, C.

AU - Kaissas, Y.

N1 - Funding Information: Manuscript received February 16, 2017; accepted April 11, 2017. Date of publication April 17, 2017; date of current version May 16, 2017. This research was supported by the NATO Science for Peace and Security Program (Project SENERA SfP-984705). The work of V. V. Brus was supported by the Alexander-von-Humboldt Foundation. (Corresponding author: O. L. Maslyanchuk.) O. L. Maslyanchuk, M. M. Solovan, P. D. Maryanchuk, I. M. Fodchuk, and V. V. Kulchynsky are with the Yury Fedkovych Chernivtsi National University, 58012 Chernivtsi, Ukraine (e-mail: emaslyanchuk@yahoo.com). Publisher Copyright: © 2017 IEEE.

PY - 2017/5

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N2 - The charge transport mechanism and spectrometric properties of the X-ray and γ-ray detectors, fabricated by the deposition of molybdenum oxide thin films onto semi-insulating p-CdTe crystals were studied. The current transport processes in the M-MoOxp-CdTe/MoOx-Mo structure are well described in the scope of the carrier's generation in the space-charge region and the space-charge-limited current models. The lifetime of charge carriers, the energy of hole traps, and the density of discrete trapping centers were determined from the comparison of the experimental data and calculations. Spectrometric properties of Mo-MoOxp-CdTe/MoOx-Mo structures were also investigated. It is shown that the investigated heterojunctions have demonstrated promising characteristics for practical application in X-ray and γ-ray detector fabrication.

AB - The charge transport mechanism and spectrometric properties of the X-ray and γ-ray detectors, fabricated by the deposition of molybdenum oxide thin films onto semi-insulating p-CdTe crystals were studied. The current transport processes in the M-MoOxp-CdTe/MoOx-Mo structure are well described in the scope of the carrier's generation in the space-charge region and the space-charge-limited current models. The lifetime of charge carriers, the energy of hole traps, and the density of discrete trapping centers were determined from the comparison of the experimental data and calculations. Spectrometric properties of Mo-MoOxp-CdTe/MoOx-Mo structures were also investigated. It is shown that the investigated heterojunctions have demonstrated promising characteristics for practical application in X-ray and γ-ray detector fabrication.

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