Capabilities of CdTe-Based Detectors with MoOx Contacts for Detection of X-A nd γ-Radiation

O. L. Maslyanchuk, M. M. Solovan, V. V. Brus, V. V. Kulchynsky, P. D. Maryanchuk, I. M. Fodchuk, V. A. Gnatyuk, T. Aoki, C. Potiriadis, Y. Kaissas

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

The charge transport mechanism and spectrometric properties of the X-ray and γ-ray detectors, fabricated by the deposition of molybdenum oxide thin films onto semi-insulating p-CdTe crystals were studied. The current transport processes in the M-MoOxp-CdTe/MoOx-Mo structure are well described in the scope of the carrier's generation in the space-charge region and the space-charge-limited current models. The lifetime of charge carriers, the energy of hole traps, and the density of discrete trapping centers were determined from the comparison of the experimental data and calculations. Spectrometric properties of Mo-MoOxp-CdTe/MoOx-Mo structures were also investigated. It is shown that the investigated heterojunctions have demonstrated promising characteristics for practical application in X-ray and γ-ray detector fabrication.

Original languageEnglish
Article number7902236
Pages (from-to)1168-1172
Number of pages5
JournalIEEE Transactions on Nuclear Science
Volume64
Issue number5
DOIs
Publication statusPublished - May 2017
Externally publishedYes

Keywords

  • Leakage currents
  • Schottky diodes
  • semiconductor radiation detectors
  • X-ray detectors

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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