Cavity enhancement of resonant frequencies in semiconductor lasers subject to optical injection

T. B. Simpson, J. M. Liu, K. F. Huang, K. Tai, C. M. Clayton, A. Gavrielides, V. Kovanis

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

The injection of an optical signal into a semiconductor laser biased near or above the lasing threshold modifies the coupling between the free carriers and the intracavity field. The detuning between the frequency of the injected signal and the free-running oscillation frequency and the ratio of the photon lifetime to the carrier lifetime are key parameters in determining the enhancement of the carrier-field resonant coupling frequency and the stability of the output field. Experimental results using a vertical cavity surface emitting laser biased near threshold are in agreement with calculations using a lumped-element oscillator model.

Original languageEnglish
JournalPhysical Review A - Atomic, Molecular, and Optical Physics
Volume52
Issue number6
DOIs
Publication statusPublished - 1995
Externally publishedYes

Fingerprint

resonant frequencies
semiconductor lasers
injection
cavities
thresholds
frequency stability
augmentation
carrier lifetime
surface emitting lasers
optical communication
lasing
oscillators
life (durability)
oscillations
output
photons

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Atomic and Molecular Physics, and Optics

Cite this

Cavity enhancement of resonant frequencies in semiconductor lasers subject to optical injection. / Simpson, T. B.; Liu, J. M.; Huang, K. F.; Tai, K.; Clayton, C. M.; Gavrielides, A.; Kovanis, V.

In: Physical Review A - Atomic, Molecular, and Optical Physics, Vol. 52, No. 6, 1995.

Research output: Contribution to journalArticle

Simpson, T. B. ; Liu, J. M. ; Huang, K. F. ; Tai, K. ; Clayton, C. M. ; Gavrielides, A. ; Kovanis, V. / Cavity enhancement of resonant frequencies in semiconductor lasers subject to optical injection. In: Physical Review A - Atomic, Molecular, and Optical Physics. 1995 ; Vol. 52, No. 6.
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