CdTe based X/γ-ray detector with MoOx contacts

O. L. Maslyanchuk; M. M. Solovan; V. V. Brus; E. V. Maistruk; S. V. Solodin

doi:10.21272/jnep.9(3).03035

CdTe based X/γ-ray detector with MoO_x contacts

O. L. Maslyanchuk, M. M. Solovan, V. V. Brus, E. V. Maistruk, S. V. Solodin

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The electrical characteristics of the Mo-MoO_x/p-CdTe/MoO_x-Mo heterostructures, manufactured by magnetron sputtering of molybdenum oxide thin films on CdTe semi-insulating crystals produced by Acrorad Co. Ltd were studied. Optimization of substrate conditions pretreatment and contacts deposition allowed to reduce the dark current of the detectors compared with earlier analogs and, consequently, to improve its spectrometric characteristics. The charge transport mechanisms for ensuring the low values of reverse currents in the structures were determined: the generation-recombination in the space charge region (SCR) at relatively low voltages and currents limited by the space charge at high voltages. It is shown that the heterostructure Mo-MoO_x/p-CdTe/MoOx-Mo can be used for practical applications in the X- and γ-ray detectors.

Original language	English
Article number	03035
Journal	Journal of Nano- and Electronic Physics
Volume	9
Issue number	3
DOIs	https://doi.org/10.21272/jnep.9(3).03035
Publication status	Published - 2017
Externally published	Yes

Keywords

CdTe
Charge transport
MoO
Radiation detector
Schottky diodes
Space-charge-limited currents

ASJC Scopus subject areas

Radiation
Materials Science(all)
Condensed Matter Physics

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@article{0b107ef5d3684e95b3384c0d4ea105f8,

title = "CdTe based X/γ-ray detector with MoOx contacts",

abstract = "The electrical characteristics of the Mo-MoOx/p-CdTe/MoOx-Mo heterostructures, manufactured by magnetron sputtering of molybdenum oxide thin films on CdTe semi-insulating crystals produced by Acrorad Co. Ltd were studied. Optimization of substrate conditions pretreatment and contacts deposition allowed to reduce the dark current of the detectors compared with earlier analogs and, consequently, to improve its spectrometric characteristics. The charge transport mechanisms for ensuring the low values of reverse currents in the structures were determined: the generation-recombination in the space charge region (SCR) at relatively low voltages and currents limited by the space charge at high voltages. It is shown that the heterostructure Mo-MoOx/p-CdTe/MoOx-Mo can be used for practical applications in the X- and γ-ray detectors.",

keywords = "CdTe, Charge transport, MoO, Radiation detector, Schottky diodes, Space-charge-limited currents",

author = "Maslyanchuk, {O. L.} and Solovan, {M. M.} and Brus, {V. V.} and Maistruk, {E. V.} and Solodin, {S. V.}",

note = "Publisher Copyright: {\textcopyright} 2017 Sumy State University.",

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doi = "10.21272/jnep.9(3).03035",

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TY - JOUR

T1 - CdTe based X/γ-ray detector with MoOx contacts

AU - Maslyanchuk, O. L.

AU - Solovan, M. M.

AU - Brus, V. V.

AU - Maistruk, E. V.

AU - Solodin, S. V.

PY - 2017

Y1 - 2017

N2 - The electrical characteristics of the Mo-MoOx/p-CdTe/MoOx-Mo heterostructures, manufactured by magnetron sputtering of molybdenum oxide thin films on CdTe semi-insulating crystals produced by Acrorad Co. Ltd were studied. Optimization of substrate conditions pretreatment and contacts deposition allowed to reduce the dark current of the detectors compared with earlier analogs and, consequently, to improve its spectrometric characteristics. The charge transport mechanisms for ensuring the low values of reverse currents in the structures were determined: the generation-recombination in the space charge region (SCR) at relatively low voltages and currents limited by the space charge at high voltages. It is shown that the heterostructure Mo-MoOx/p-CdTe/MoOx-Mo can be used for practical applications in the X- and γ-ray detectors.

AB - The electrical characteristics of the Mo-MoOx/p-CdTe/MoOx-Mo heterostructures, manufactured by magnetron sputtering of molybdenum oxide thin films on CdTe semi-insulating crystals produced by Acrorad Co. Ltd were studied. Optimization of substrate conditions pretreatment and contacts deposition allowed to reduce the dark current of the detectors compared with earlier analogs and, consequently, to improve its spectrometric characteristics. The charge transport mechanisms for ensuring the low values of reverse currents in the structures were determined: the generation-recombination in the space charge region (SCR) at relatively low voltages and currents limited by the space charge at high voltages. It is shown that the heterostructure Mo-MoOx/p-CdTe/MoOx-Mo can be used for practical applications in the X- and γ-ray detectors.

KW - CdTe

KW - Charge transport

KW - MoO

KW - Radiation detector

KW - Schottky diodes

KW - Space-charge-limited currents

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