The electrical characteristics of Pd Schottky barrier to n-type GaN grown by MOCVD were investigated. The effective barrier height was found to be 0.94 and 1.07eV from I-V and C-V measurements, respectively. The ideality factor was approx.1.04. The effective Richardson constant was determined to be approx.3.24Acm-2K-2 using the modified Norde plot. These values were also compared to Au Schottky contacts.
ASJC Scopus subject areas
- Electrical and Electronic Engineering