Characterisation of Pd Schottky barrier on n-type GaN

A. T. Ping, A. C. Schmitz, M. Asif Khan, I. Adesida

Research output: Contribution to journalArticlepeer-review

52 Citations (Scopus)


The electrical characteristics of Pd Schottky barrier to n-type GaN grown by MOCVD were investigated. The effective barrier height was found to be 0.94 and 1.07eV from I-V and C-V measurements, respectively. The ideality factor was approx.1.04. The effective Richardson constant was determined to be approx.3.24Acm-2K-2 using the modified Norde plot. These values were also compared to Au Schottky contacts.

Original languageEnglish
Pages (from-to)68-70
Number of pages3
JournalElectronics Letters
Issue number1
Publication statusPublished - Jan 4 1996

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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