Characteristics of GaAs/AlGaAs-Doped Channel MISFET's at Cryogenic Temperatures

J. Laskar, James Kolodzey, A. A. Ketterson, Ilesanmi Adesida, Alfred Y. Cho

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We present high-frequency measurements at cryogenic temperatures to 125 K of 0.3-μm gate length GaAs/Alo.3Gao.7As metal-insulator semiconductor field-effect transistors (MISFET's) with a doped channel. Experimental results demonstrate significant improvement in performance including an increase in the maximum frequency of oscillation fmax from 70 to 81 GHz and an increase in the unity current gain cutoff frequency fT from 46 to 57 GHz. Independently determined decreases in electron mobility and increases in electron velocity under similar conditions lead to the conclusion that carrier velocity and not mobility controls transport in these devices. These results show the highspeed potential of doped channel MISFET's at both room temperature and cryogenic temperatures.

Original languageEnglish
Pages (from-to)300-302
Number of pages3
JournalIEEE Electron Device Letters
Volume11
Issue number7
DOIs
Publication statusPublished - 1990
Externally publishedYes

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MISFET devices
Cryogenics
Electron mobility
Cutoff frequency
Temperature
Electrons
gallium arsenide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Engineering(all)

Cite this

Characteristics of GaAs/AlGaAs-Doped Channel MISFET's at Cryogenic Temperatures. / Laskar, J.; Kolodzey, James; Ketterson, A. A.; Adesida, Ilesanmi; Cho, Alfred Y.

In: IEEE Electron Device Letters, Vol. 11, No. 7, 1990, p. 300-302.

Research output: Contribution to journalArticle

Laskar, J. ; Kolodzey, James ; Ketterson, A. A. ; Adesida, Ilesanmi ; Cho, Alfred Y. / Characteristics of GaAs/AlGaAs-Doped Channel MISFET's at Cryogenic Temperatures. In: IEEE Electron Device Letters. 1990 ; Vol. 11, No. 7. pp. 300-302.
@article{c66d38da8f9e409796dbba819ec42ca8,
title = "Characteristics of GaAs/AlGaAs-Doped Channel MISFET's at Cryogenic Temperatures",
abstract = "We present high-frequency measurements at cryogenic temperatures to 125 K of 0.3-μm gate length GaAs/Alo.3Gao.7As metal-insulator semiconductor field-effect transistors (MISFET's) with a doped channel. Experimental results demonstrate significant improvement in performance including an increase in the maximum frequency of oscillation fmax from 70 to 81 GHz and an increase in the unity current gain cutoff frequency fT from 46 to 57 GHz. Independently determined decreases in electron mobility and increases in electron velocity under similar conditions lead to the conclusion that carrier velocity and not mobility controls transport in these devices. These results show the highspeed potential of doped channel MISFET's at both room temperature and cryogenic temperatures.",
author = "J. Laskar and James Kolodzey and Ketterson, {A. A.} and Ilesanmi Adesida and Cho, {Alfred Y.}",
year = "1990",
doi = "10.1109/55.56481",
language = "English",
volume = "11",
pages = "300--302",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "7",

}

TY - JOUR

T1 - Characteristics of GaAs/AlGaAs-Doped Channel MISFET's at Cryogenic Temperatures

AU - Laskar, J.

AU - Kolodzey, James

AU - Ketterson, A. A.

AU - Adesida, Ilesanmi

AU - Cho, Alfred Y.

PY - 1990

Y1 - 1990

N2 - We present high-frequency measurements at cryogenic temperatures to 125 K of 0.3-μm gate length GaAs/Alo.3Gao.7As metal-insulator semiconductor field-effect transistors (MISFET's) with a doped channel. Experimental results demonstrate significant improvement in performance including an increase in the maximum frequency of oscillation fmax from 70 to 81 GHz and an increase in the unity current gain cutoff frequency fT from 46 to 57 GHz. Independently determined decreases in electron mobility and increases in electron velocity under similar conditions lead to the conclusion that carrier velocity and not mobility controls transport in these devices. These results show the highspeed potential of doped channel MISFET's at both room temperature and cryogenic temperatures.

AB - We present high-frequency measurements at cryogenic temperatures to 125 K of 0.3-μm gate length GaAs/Alo.3Gao.7As metal-insulator semiconductor field-effect transistors (MISFET's) with a doped channel. Experimental results demonstrate significant improvement in performance including an increase in the maximum frequency of oscillation fmax from 70 to 81 GHz and an increase in the unity current gain cutoff frequency fT from 46 to 57 GHz. Independently determined decreases in electron mobility and increases in electron velocity under similar conditions lead to the conclusion that carrier velocity and not mobility controls transport in these devices. These results show the highspeed potential of doped channel MISFET's at both room temperature and cryogenic temperatures.

UR - http://www.scopus.com/inward/record.url?scp=0025465308&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025465308&partnerID=8YFLogxK

U2 - 10.1109/55.56481

DO - 10.1109/55.56481

M3 - Article

VL - 11

SP - 300

EP - 302

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 7

ER -