Characteristics of Ti/Pt/Au ohmic contacts on p-type GaN/AlxGa1-xN superlattices

L. Zhou; F. Khan; A. T. Ping; A. Osinski; I. Adesida

Characteristics of Ti/Pt/Au ohmic contacts on p-type GaN/Al_xGa_1-xN superlattices

L. Zhou, F. Khan, A. T. Ping, A. Osinski, I. Adesida

Research output: Contribution to journal › Conference article › peer-review

Abstract

Ti/Pt/Au metallization on p-type GaN/Al_xGa_1-xN (x=0.10 and 0.20) superlattices (SL) were investigated as ohmic contacts. Current-voltage and specific contact resistance measurements indicate enhanced p-type doping in the superlattice structures compared to that in GaN. Ti/Pt/Au is shown to be an effective ohmic metallization scheme on p-type GaN/Al_xGa_1-xN superlattices. A specific contact resistance of R_c = 4.6×10^-4 Ω-cm² is achieved for unalloyed Ti/Pt/Au on GaN/Al_0.2Ga_0.8N SL. This is reduced to 1.3×10^-4 Ω-cm² after annealing for 5 minutes at 300°C.

Original language	English
Pages (from-to)	W10.3.1 - W10.3.6
Journal	Materials Research Society Symposium - Proceedings
Volume	595
Publication status	Published - 2000
Externally published	Yes
Event	The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys' - Boston, MA, USA Duration: Nov 28 1999 → Dec 3 1999

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{47b6d7d4b29b4867ae7dda58219ed156,

title = "Characteristics of Ti/Pt/Au ohmic contacts on p-type GaN/AlxGa1-xN superlattices",

abstract = "Ti/Pt/Au metallization on p-type GaN/AlxGa1-xN (x=0.10 and 0.20) superlattices (SL) were investigated as ohmic contacts. Current-voltage and specific contact resistance measurements indicate enhanced p-type doping in the superlattice structures compared to that in GaN. Ti/Pt/Au is shown to be an effective ohmic metallization scheme on p-type GaN/AlxGa1-xN superlattices. A specific contact resistance of Rc = 4.6×10-4 Ω-cm2 is achieved for unalloyed Ti/Pt/Au on GaN/Al0.2Ga0.8N SL. This is reduced to 1.3×10-4 Ω-cm2 after annealing for 5 minutes at 300°C.",

author = "L. Zhou and F. Khan and Ping, {A. T.} and A. Osinski and I. Adesida",

year = "2000",

language = "English",

volume = "595",

pages = "W10.3.1 -- W10.3.6",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys' ; Conference date: 28-11-1999 Through 03-12-1999",

}

TY - JOUR

T1 - Characteristics of Ti/Pt/Au ohmic contacts on p-type GaN/AlxGa1-xN superlattices

AU - Zhou, L.

AU - Khan, F.

AU - Ping, A. T.

AU - Osinski, A.

AU - Adesida, I.

PY - 2000

Y1 - 2000

N2 - Ti/Pt/Au metallization on p-type GaN/AlxGa1-xN (x=0.10 and 0.20) superlattices (SL) were investigated as ohmic contacts. Current-voltage and specific contact resistance measurements indicate enhanced p-type doping in the superlattice structures compared to that in GaN. Ti/Pt/Au is shown to be an effective ohmic metallization scheme on p-type GaN/AlxGa1-xN superlattices. A specific contact resistance of Rc = 4.6×10-4 Ω-cm2 is achieved for unalloyed Ti/Pt/Au on GaN/Al0.2Ga0.8N SL. This is reduced to 1.3×10-4 Ω-cm2 after annealing for 5 minutes at 300°C.

AB - Ti/Pt/Au metallization on p-type GaN/AlxGa1-xN (x=0.10 and 0.20) superlattices (SL) were investigated as ohmic contacts. Current-voltage and specific contact resistance measurements indicate enhanced p-type doping in the superlattice structures compared to that in GaN. Ti/Pt/Au is shown to be an effective ohmic metallization scheme on p-type GaN/AlxGa1-xN superlattices. A specific contact resistance of Rc = 4.6×10-4 Ω-cm2 is achieved for unalloyed Ti/Pt/Au on GaN/Al0.2Ga0.8N SL. This is reduced to 1.3×10-4 Ω-cm2 after annealing for 5 minutes at 300°C.

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UR - http://www.scopus.com/inward/citedby.url?scp=0033724259&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033724259

SN - 0272-9172

VL - 595

SP - W10.3.1 - W10.3.6

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys'

Y2 - 28 November 1999 through 3 December 1999

ER -

Characteristics of Ti/Pt/Au ohmic contacts on p-type GaN/Al_xGa_1-xN superlattices

Abstract

ASJC Scopus subject areas

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