Characteristics of Ti/Pt/Au ohmic contacts on p-type GaN/AlxGa1-xN superlattices

L. Zhou, F. Khan, A. T. Ping, A. Osinski, I. Adesida

Research output: Contribution to journalConference articlepeer-review


Ti/Pt/Au metallization on p-type GaN/AlxGa1-xN (x=0.10 and 0.20) superlattices (SL) were investigated as ohmic contacts. Current-voltage and specific contact resistance measurements indicate enhanced p-type doping in the superlattice structures compared to that in GaN. Ti/Pt/Au is shown to be an effective ohmic metallization scheme on p-type GaN/AlxGa1-xN superlattices. A specific contact resistance of Rc = 4.6×10-4 Ω-cm2 is achieved for unalloyed Ti/Pt/Au on GaN/Al0.2Ga0.8N SL. This is reduced to 1.3×10-4 Ω-cm2 after annealing for 5 minutes at 300°C.

Original languageEnglish
Pages (from-to)W10.3.1 - W10.3.6
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - Jan 1 2000
EventThe 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys' - Boston, MA, USA
Duration: Nov 28 1999Dec 3 1999

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'Characteristics of Ti/Pt/Au ohmic contacts on p-type GaN/AlxGa1-xN superlattices'. Together they form a unique fingerprint.

Cite this