Characteristics of Ti/Pt/Au ohmic contacts onp-type GaN/AlxGa1-xN superlattices

L. Zhou; F. Khan; A. T. Ping; A. Osinski; I. Adesida

Characteristics of Ti/Pt/Au ohmic contacts onp-type GaN/Al_xGa_1-xN superlattices

L. Zhou, F. Khan, A. T. Ping, A. Osinski, I. Adesida

Nazarbayev University

Research output: Contribution to journal › Article › peer-review

Abstract

Ti/Pt/Au metallization on p-type GaN/Al_xGa_1-xN (x=0. 10 and 0. 20) superlattices (SL) were investigated as ohmic contacts. Current-voltage and specific contact resistance measurements indicate enhanced p-type doping in the superlattice structures compared to that in GaN. Ti/Pt/Au is shown to be an effective ohmic metallization scheme on p-type GaN/Al_xGa_1-xN superlattices. A specific contact resistance of R_c = 4. 6×10^-4 cm² is achieved for unalloyed Ti/Pt/Au on GaN/Al_{0. 2}Ga_{0. 8}N SL. This is reduced to 1. 3×10^-4 cm² after annealing for 5 minutes at 300 °C.

Original language	English
Pages (from-to)	W1031-W1036
Journal	Materials Research Society Symposium - Proceedings
Volume	595
Publication status	Published - Jan 1 2000

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{e40a4710238b44c4ae9c97979329e403,

title = "Characteristics of Ti/Pt/Au ohmic contacts onp-type GaN/AlxGa1-xN superlattices",

abstract = "Ti/Pt/Au metallization on p-type GaN/AlxGa1-xN (x=0. 10 and 0. 20) superlattices (SL) were investigated as ohmic contacts. Current-voltage and specific contact resistance measurements indicate enhanced p-type doping in the superlattice structures compared to that in GaN. Ti/Pt/Au is shown to be an effective ohmic metallization scheme on p-type GaN/AlxGa1-xN superlattices. A specific contact resistance of Rc = 4. 6×10-4 cm2 is achieved for unalloyed Ti/Pt/Au on GaN/Al0. 2Ga0. 8N SL. This is reduced to 1. 3×10-4 cm2 after annealing for 5 minutes at 300 °C.",

author = "L. Zhou and F. Khan and Ping, {A. T.} and A. Osinski and I. Adesida",

year = "2000",

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pages = "W1031--W1036",

journal = "Materials Research Society Symposium - Proceedings",

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TY - JOUR

T1 - Characteristics of Ti/Pt/Au ohmic contacts onp-type GaN/AlxGa1-xN superlattices

AU - Zhou, L.

AU - Khan, F.

AU - Ping, A. T.

AU - Osinski, A.

AU - Adesida, I.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - Ti/Pt/Au metallization on p-type GaN/AlxGa1-xN (x=0. 10 and 0. 20) superlattices (SL) were investigated as ohmic contacts. Current-voltage and specific contact resistance measurements indicate enhanced p-type doping in the superlattice structures compared to that in GaN. Ti/Pt/Au is shown to be an effective ohmic metallization scheme on p-type GaN/AlxGa1-xN superlattices. A specific contact resistance of Rc = 4. 6×10-4 cm2 is achieved for unalloyed Ti/Pt/Au on GaN/Al0. 2Ga0. 8N SL. This is reduced to 1. 3×10-4 cm2 after annealing for 5 minutes at 300 °C.

AB - Ti/Pt/Au metallization on p-type GaN/AlxGa1-xN (x=0. 10 and 0. 20) superlattices (SL) were investigated as ohmic contacts. Current-voltage and specific contact resistance measurements indicate enhanced p-type doping in the superlattice structures compared to that in GaN. Ti/Pt/Au is shown to be an effective ohmic metallization scheme on p-type GaN/AlxGa1-xN superlattices. A specific contact resistance of Rc = 4. 6×10-4 cm2 is achieved for unalloyed Ti/Pt/Au on GaN/Al0. 2Ga0. 8N SL. This is reduced to 1. 3×10-4 cm2 after annealing for 5 minutes at 300 °C.

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