Characteristics of Ti/Pt/Au ohmic contacts onp-type GaN/AlxGa1-xN superlattices

L. Zhou, F. Khan, A. T. Ping, A. Osinski, I. Adesida

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Ti/Pt/Au metallization on p-type GaN/AlxGa1-xN (x=0. 10 and 0. 20) superlattices (SL) were investigated as ohmic contacts. Current-voltage and specific contact resistance measurements indicate enhanced p-type doping in the superlattice structures compared to that in GaN. Ti/Pt/Au is shown to be an effective ohmic metallization scheme on p-type GaN/AlxGa1-xN superlattices. A specific contact resistance of Rc = 4. 6×10-4 cm2 is achieved for unalloyed Ti/Pt/Au on GaN/Al0. 2Ga0. 8N SL. This is reduced to 1. 3×10-4 cm2 after annealing for 5 minutes at 300 °C.

Original languageEnglish
Pages (from-to)W1031-W1036
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - Jan 1 2000

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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