Ti/Pt/Au metallization on p-type GaN/AlxGa1-xN (x=0. 10 and 0. 20) superlattices (SL) were investigated as ohmic contacts. Current-voltage and specific contact resistance measurements indicate enhanced p-type doping in the superlattice structures compared to that in GaN. Ti/Pt/Au is shown to be an effective ohmic metallization scheme on p-type GaN/AlxGa1-xN superlattices. A specific contact resistance of Rc = 4. 6×10-4 cm2 is achieved for unalloyed Ti/Pt/Au on GaN/Al0. 2Ga0. 8N SL. This is reduced to 1. 3×10-4 cm2 after annealing for 5 minutes at 300 °C.
|Journal||Materials Research Society Symposium - Proceedings|
|Publication status||Published - Jan 1 2000|
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering