Characterization of Au and Al segregation layer in post-annealed thin Ti/Al/Mo/Au Ohmic contacts to n-GaN

Liang Wang; Fitih M. Mohammed; Ilesanmi Adesida

doi:10.1063/1.2132089

Characterization of Au and Al segregation layer in post-annealed thin Ti/Al/Mo/Au Ohmic contacts to n-GaN

Liang Wang, Fitih M. Mohammed, Ilesanmi Adesida

Nazarbayev University

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

The post-annealed interfacial microstructures of thin TiAlMoAu metallization on n-GaN were investigated using analytical transmission electron microscopy. A 5-20-nm -thick continuous TiN layer was observed to have been formed due to the reaction between Ti and GaN. A continuous Au and Al segregation with a narrow thickness occurring exactly at the TiNGaN interface was identified. Detailed structure and composition of the segregation layer were characterized. It is noted that despite the presence of Au at the interfacial region, an excellent Ohmic contact resistance was obtained. It suggests that the segregation of Au at the semiconductormetal interface does not necessarily have detrimental effects on contact performance.

Original language	English
Article number	106105
Journal	Journal of Applied Physics
Volume	98
Issue number	10
DOIs	https://doi.org/10.1063/1.2132089
Publication status	Published - Nov 15 2005

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Characterization of Au and Al segregation layer in post-annealed thin Ti/Al/Mo/Au Ohmic contacts to n-GaN",

abstract = "The post-annealed interfacial microstructures of thin TiAlMoAu metallization on n-GaN were investigated using analytical transmission electron microscopy. A 5-20-nm -thick continuous TiN layer was observed to have been formed due to the reaction between Ti and GaN. A continuous Au and Al segregation with a narrow thickness occurring exactly at the TiNGaN interface was identified. Detailed structure and composition of the segregation layer were characterized. It is noted that despite the presence of Au at the interfacial region, an excellent Ohmic contact resistance was obtained. It suggests that the segregation of Au at the semiconductormetal interface does not necessarily have detrimental effects on contact performance.",

author = "Liang Wang and Mohammed, {Fitih M.} and Ilesanmi Adesida",

note = "Funding Information: This work was supported by ONR Grant Nos. N00014-01-1-100 and N00014-01-1-1072 (Monitor: H. Dietrich). TEM analyses were carried out at the Center for Microanalysis of Materials, University of Illinois (DOE: DEFG02-91-ER45439). The assistance of R. Twesten, J. G. Wen, and C. H. Lei on the TEM is acknowledged. Copyright: Copyright 2012 Elsevier B.V., All rights reserved.",

year = "2005",

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doi = "10.1063/1.2132089",

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journal = "Journal of Applied Physics",

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AU - Wang, Liang

AU - Mohammed, Fitih M.

AU - Adesida, Ilesanmi

N1 - Funding Information: This work was supported by ONR Grant Nos. N00014-01-1-100 and N00014-01-1-1072 (Monitor: H. Dietrich). TEM analyses were carried out at the Center for Microanalysis of Materials, University of Illinois (DOE: DEFG02-91-ER45439). The assistance of R. Twesten, J. G. Wen, and C. H. Lei on the TEM is acknowledged. Copyright: Copyright 2012 Elsevier B.V., All rights reserved.

PY - 2005/11/15

Y1 - 2005/11/15

N2 - The post-annealed interfacial microstructures of thin TiAlMoAu metallization on n-GaN were investigated using analytical transmission electron microscopy. A 5-20-nm -thick continuous TiN layer was observed to have been formed due to the reaction between Ti and GaN. A continuous Au and Al segregation with a narrow thickness occurring exactly at the TiNGaN interface was identified. Detailed structure and composition of the segregation layer were characterized. It is noted that despite the presence of Au at the interfacial region, an excellent Ohmic contact resistance was obtained. It suggests that the segregation of Au at the semiconductormetal interface does not necessarily have detrimental effects on contact performance.

AB - The post-annealed interfacial microstructures of thin TiAlMoAu metallization on n-GaN were investigated using analytical transmission electron microscopy. A 5-20-nm -thick continuous TiN layer was observed to have been formed due to the reaction between Ti and GaN. A continuous Au and Al segregation with a narrow thickness occurring exactly at the TiNGaN interface was identified. Detailed structure and composition of the segregation layer were characterized. It is noted that despite the presence of Au at the interfacial region, an excellent Ohmic contact resistance was obtained. It suggests that the segregation of Au at the semiconductormetal interface does not necessarily have detrimental effects on contact performance.

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Characterization of Au and Al segregation layer in post-annealed thin Ti/Al/Mo/Au Ohmic contacts to n-GaN

Abstract

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