Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers

B. H. Leung, N. H. Chan, W. K. Fong, C. F. Zhu, S. W. Ng, H. F. Lui, K. Y. Tong, C. Surya, L. W. Lu, W. K. Ge

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

Gallium nitride (GaN)-based Schottky junctions were fabricated by RF-plasma-assisted molecular beam epitaxy (MBE). The GaN epitaxial layers were deposited on novel double buffer layers that consist of a conventional low-temperature buffer layer (LTBL) grown at 500°C and an intermediate-temperature buffer layer (ITBL) deposited at 690°C. Low-frequency excess noise and deep level transient Fourier spectroscopy (DLTFS) were measured from the devices. The results demonstrate a significant reduction in the density of deep levels in the devices fabricated with the GaN films grown with an ITBL. Compared to the control sample, which was grown with just a conventional LTBL, a three-order-of-magnitude reduction in the deep levels 0.4 eV below the conduction band minimum (Ec) is observed in the bulk of the thin films using DLTFS measurements.

Original languageEnglish
Pages (from-to)314-318
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume49
Issue number2
DOIs
Publication statusPublished - Feb 1 2002
Externally publishedYes

Keywords

  • Deep level transient Fourier spectroscopy (DLTFS)
  • Gallium nitride (GaN)
  • Intermediate-temperature buffer layer (ITBF)
  • Low-frequency noise

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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