Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers

B. H. Leung; N. H. Chan; W. K. Fong; C. F. Zhu; S. W. Ng; H. F. Lui; K. Y. Tong; C. Surya; L. W. Lu; W. K. Ge

doi:10.1109/16.981223

Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers

B. H. Leung, N. H. Chan, W. K. Fong, C. F. Zhu, S. W. Ng, H. F. Lui, K. Y. Tong, C. Surya, L. W. Lu, W. K. Ge

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Gallium nitride (GaN)-based Schottky junctions were fabricated by RF-plasma-assisted molecular beam epitaxy (MBE). The GaN epitaxial layers were deposited on novel double buffer layers that consist of a conventional low-temperature buffer layer (LTBL) grown at 500°C and an intermediate-temperature buffer layer (ITBL) deposited at 690°C. Low-frequency excess noise and deep level transient Fourier spectroscopy (DLTFS) were measured from the devices. The results demonstrate a significant reduction in the density of deep levels in the devices fabricated with the GaN films grown with an ITBL. Compared to the control sample, which was grown with just a conventional LTBL, a three-order-of-magnitude reduction in the deep levels 0.4 eV below the conduction band minimum (Ec) is observed in the bulk of the thin films using DLTFS measurements.

Original language	English
Pages (from-to)	314-318
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	49
Issue number	2
DOIs	https://doi.org/10.1109/16.981223
Publication status	Published - Feb 1 2002
Externally published	Yes

Keywords

Deep level transient Fourier spectroscopy (DLTFS)
Gallium nitride (GaN)
Intermediate-temperature buffer layer (ITBF)
Low-frequency noise

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers. / Leung, B. H.; Chan, N. H.; Fong, W. K.; Zhu, C. F.; Ng, S. W.; Lui, H. F.; Tong, K. Y.; Surya, C.; Lu, L. W.; Ge, W. K.

In: IEEE Transactions on Electron Devices, Vol. 49, No. 2, 01.02.2002, p. 314-318.

Research output: Contribution to journal › Article › peer-review

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title = "Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers",

abstract = "Gallium nitride (GaN)-based Schottky junctions were fabricated by RF-plasma-assisted molecular beam epitaxy (MBE). The GaN epitaxial layers were deposited on novel double buffer layers that consist of a conventional low-temperature buffer layer (LTBL) grown at 500°C and an intermediate-temperature buffer layer (ITBL) deposited at 690°C. Low-frequency excess noise and deep level transient Fourier spectroscopy (DLTFS) were measured from the devices. The results demonstrate a significant reduction in the density of deep levels in the devices fabricated with the GaN films grown with an ITBL. Compared to the control sample, which was grown with just a conventional LTBL, a three-order-of-magnitude reduction in the deep levels 0.4 eV below the conduction band minimum (Ec) is observed in the bulk of the thin films using DLTFS measurements.",

keywords = "Deep level transient Fourier spectroscopy (DLTFS), Gallium nitride (GaN), Intermediate-temperature buffer layer (ITBF), Low-frequency noise",

author = "Leung, {B. H.} and Chan, {N. H.} and Fong, {W. K.} and Zhu, {C. F.} and Ng, {S. W.} and Lui, {H. F.} and Tong, {K. Y.} and C. Surya and Lu, {L. W.} and Ge, {W. K.}",

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AU - Chan, N. H.

AU - Fong, W. K.

AU - Zhu, C. F.

AU - Ng, S. W.

AU - Lui, H. F.

AU - Tong, K. Y.

AU - Surya, C.

AU - Lu, L. W.

AU - Ge, W. K.

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N2 - Gallium nitride (GaN)-based Schottky junctions were fabricated by RF-plasma-assisted molecular beam epitaxy (MBE). The GaN epitaxial layers were deposited on novel double buffer layers that consist of a conventional low-temperature buffer layer (LTBL) grown at 500°C and an intermediate-temperature buffer layer (ITBL) deposited at 690°C. Low-frequency excess noise and deep level transient Fourier spectroscopy (DLTFS) were measured from the devices. The results demonstrate a significant reduction in the density of deep levels in the devices fabricated with the GaN films grown with an ITBL. Compared to the control sample, which was grown with just a conventional LTBL, a three-order-of-magnitude reduction in the deep levels 0.4 eV below the conduction band minimum (Ec) is observed in the bulk of the thin films using DLTFS measurements.

AB - Gallium nitride (GaN)-based Schottky junctions were fabricated by RF-plasma-assisted molecular beam epitaxy (MBE). The GaN epitaxial layers were deposited on novel double buffer layers that consist of a conventional low-temperature buffer layer (LTBL) grown at 500°C and an intermediate-temperature buffer layer (ITBL) deposited at 690°C. Low-frequency excess noise and deep level transient Fourier spectroscopy (DLTFS) were measured from the devices. The results demonstrate a significant reduction in the density of deep levels in the devices fabricated with the GaN films grown with an ITBL. Compared to the control sample, which was grown with just a conventional LTBL, a three-order-of-magnitude reduction in the deep levels 0.4 eV below the conduction band minimum (Ec) is observed in the bulk of the thin films using DLTFS measurements.

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KW - Intermediate-temperature buffer layer (ITBF)

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