Abstract
Gallium nitride (GaN)-based Schottky junctions were fabricated by RF-plasma-assisted molecular beam epitaxy (MBE). The GaN epitaxial layers were deposited on novel double buffer layers that consist of a conventional low-temperature buffer layer (LTBL) grown at 500°C and an intermediate-temperature buffer layer (ITBL) deposited at 690°C. Low-frequency excess noise and deep level transient Fourier spectroscopy (DLTFS) were measured from the devices. The results demonstrate a significant reduction in the density of deep levels in the devices fabricated with the GaN films grown with an ITBL. Compared to the control sample, which was grown with just a conventional LTBL, a three-order-of-magnitude reduction in the deep levels 0.4 eV below the conduction band minimum (Ec) is observed in the bulk of the thin films using DLTFS measurements.
Original language | English |
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Pages (from-to) | 314-318 |
Number of pages | 5 |
Journal | IEEE Transactions on Electron Devices |
Volume | 49 |
Issue number | 2 |
DOIs | |
Publication status | Published - Feb 1 2002 |
Externally published | Yes |
Keywords
- Deep level transient Fourier spectroscopy (DLTFS)
- Gallium nitride (GaN)
- Intermediate-temperature buffer layer (ITBF)
- Low-frequency noise
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering