Characterization of G-R noise in GaAs/AlGaAs based double barrier resonant tunneling diodes

Charles Surya

Characterization of G-R noise in GaAs/AlGaAs based double barrier resonant tunneling diodes

Charles Surya

Research output: Contribution to conference › Paper › peer-review

Abstract

Studies on the origin of low-frequency excess noise in GaAs/Al_0.4Ga_0.6As double barrier resonant tunneling diodes (RTDs) grown by molecular-beam epitaxy (MBE) on n⁺ (100) GaAs substrates are reported. The double-barrier structure consists of 32-angstrom-thick AlGaAs barriers and a 48angstrom-thick GaAs quantum well. Before conducting the studies, the RTDs are described first.

Original language	English
Pages	24-29
Number of pages	6
Publication status	Published - Dec 1 1995
Externally published	Yes
Event	Proceedings of the 1995 IEEE Hong Kong Electron Devices Meeting - Hong Kong, Hong Kong Duration: Jul 1 1995 → Jul 1 1995

Conference

Conference	Proceedings of the 1995 IEEE Hong Kong Electron Devices Meeting
City	Hong Kong, Hong Kong
Period	7/1/95 → 7/1/95

ASJC Scopus subject areas

Engineering(all)

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Cite this

@conference{c1ca9a81d6b24d128f3dbce97f830aac,

title = "Characterization of G-R noise in GaAs/AlGaAs based double barrier resonant tunneling diodes",

abstract = "Studies on the origin of low-frequency excess noise in GaAs/Al0.4Ga0.6As double barrier resonant tunneling diodes (RTDs) grown by molecular-beam epitaxy (MBE) on n+ (100) GaAs substrates are reported. The double-barrier structure consists of 32-angstrom-thick AlGaAs barriers and a 48angstrom-thick GaAs quantum well. Before conducting the studies, the RTDs are described first.",

author = "Charles Surya",

year = "1995",

month = dec,

day = "1",

language = "English",

pages = "24--29",

note = "Proceedings of the 1995 IEEE Hong Kong Electron Devices Meeting ; Conference date: 01-07-1995 Through 01-07-1995",

}

TY - CONF

T1 - Characterization of G-R noise in GaAs/AlGaAs based double barrier resonant tunneling diodes

AU - Surya, Charles

PY - 1995/12/1

Y1 - 1995/12/1

N2 - Studies on the origin of low-frequency excess noise in GaAs/Al0.4Ga0.6As double barrier resonant tunneling diodes (RTDs) grown by molecular-beam epitaxy (MBE) on n+ (100) GaAs substrates are reported. The double-barrier structure consists of 32-angstrom-thick AlGaAs barriers and a 48angstrom-thick GaAs quantum well. Before conducting the studies, the RTDs are described first.

AB - Studies on the origin of low-frequency excess noise in GaAs/Al0.4Ga0.6As double barrier resonant tunneling diodes (RTDs) grown by molecular-beam epitaxy (MBE) on n+ (100) GaAs substrates are reported. The double-barrier structure consists of 32-angstrom-thick AlGaAs barriers and a 48angstrom-thick GaAs quantum well. Before conducting the studies, the RTDs are described first.

UR - http://www.scopus.com/inward/record.url?scp=0029514893&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029514893&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0029514893

SP - 24

EP - 29

T2 - Proceedings of the 1995 IEEE Hong Kong Electron Devices Meeting

Y2 - 1 July 1995 through 1 July 1995

ER -