Abstract
Studies on the origin of low-frequency excess noise in GaAs/Al0.4Ga0.6As double barrier resonant tunneling diodes (RTDs) grown by molecular-beam epitaxy (MBE) on n+ (100) GaAs substrates are reported. The double-barrier structure consists of 32-angstrom-thick AlGaAs barriers and a 48angstrom-thick GaAs quantum well. Before conducting the studies, the RTDs are described first.
Original language | English |
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Pages | 24-29 |
Number of pages | 6 |
Publication status | Published - Dec 1 1995 |
Externally published | Yes |
Event | Proceedings of the 1995 IEEE Hong Kong Electron Devices Meeting - Hong Kong, Hong Kong Duration: Jul 1 1995 → Jul 1 1995 |
Conference
Conference | Proceedings of the 1995 IEEE Hong Kong Electron Devices Meeting |
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City | Hong Kong, Hong Kong |
Period | 7/1/95 → 7/1/95 |
ASJC Scopus subject areas
- Engineering(all)