Abstract
Studies on the origin of low-frequency excess noise in GaAs/Al0.4Ga0.6As double barrier resonant tunneling diodes (RTDs) grown by molecular-beam epitaxy (MBE) on n+ (100) GaAs substrates are reported. The double-barrier structure consists of 32-angstrom-thick AlGaAs barriers and a 48angstrom-thick GaAs quantum well. Before conducting the studies, the RTDs are described first.
| Original language | English |
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| Pages | 24-29 |
| Number of pages | 6 |
| Publication status | Published - Dec 1 1995 |
| Externally published | Yes |
| Event | Proceedings of the 1995 IEEE Hong Kong Electron Devices Meeting - Hong Kong, Hong Kong Duration: Jul 1 1995 → Jul 1 1995 |
Conference
| Conference | Proceedings of the 1995 IEEE Hong Kong Electron Devices Meeting |
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| City | Hong Kong, Hong Kong |
| Period | 7/1/95 → 7/1/95 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Surya, C. (1995). Characterization of G-R noise in GaAs/AlGaAs based double barrier resonant tunneling diodes. 24-29. Paper presented at Proceedings of the 1995 IEEE Hong Kong Electron Devices Meeting, Hong Kong, Hong Kong, .