Characterization of G-R noise in GaAs/AlGaAs based double barrier resonant tunneling diodes

Charles Surya

Research output: Contribution to conferencePaper

Abstract

Studies on the origin of low-frequency excess noise in GaAs/Al0.4Ga0.6As double barrier resonant tunneling diodes (RTDs) grown by molecular-beam epitaxy (MBE) on n+ (100) GaAs substrates are reported. The double-barrier structure consists of 32-angstrom-thick AlGaAs barriers and a 48angstrom-thick GaAs quantum well. Before conducting the studies, the RTDs are described first.

Original languageEnglish
Pages24-29
Number of pages6
Publication statusPublished - Dec 1 1995
Externally publishedYes
EventProceedings of the 1995 IEEE Hong Kong Electron Devices Meeting - Hong Kong, Hong Kong
Duration: Jul 1 1995Jul 1 1995

Conference

ConferenceProceedings of the 1995 IEEE Hong Kong Electron Devices Meeting
CityHong Kong, Hong Kong
Period7/1/957/1/95

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Surya, C. (1995). Characterization of G-R noise in GaAs/AlGaAs based double barrier resonant tunneling diodes. 24-29. Paper presented at Proceedings of the 1995 IEEE Hong Kong Electron Devices Meeting, Hong Kong, Hong Kong, .