Homoepitaxial growth of GaN thin films by rf-plasma assisted MBE on HVPE templates is examined in detail. Two different growth techniques are being investigated. In one group of samples, the high-temperature GaN epitaxial layers were grown directly on HVPE-grown GaN/sapphire composite substrates. In another group of samples, intermediate-temperature buffer layers (ITBLs) of 800 nm thick were first deposited on top of the HVPE GaN templates by MBE before the growth of high-temperature epitaxial GaN layers. Substantial improvements in both the photoluminescence and the Hall mobility are observed for samples grown with the use of ITBLs.
|Number of pages||4|
|Publication status||Published - Jan 1 2001|
|Event||2001 IEEE Hong Kong Electron Devices Meeting - Hong Kong, China|
Duration: Jun 30 2001 → …
|Conference||2001 IEEE Hong Kong Electron Devices Meeting|
|Period||6/30/01 → …|
ASJC Scopus subject areas