Characterization of GaN thin films on HVPE GaN templates

C. F. Zhu, W. K. Fong, B. H. Leung, N. H. Chan, C. Surya

Research output: Contribution to conferencePaperpeer-review


Homoepitaxial growth of GaN thin films by rf-plasma assisted MBE on HVPE templates is examined in detail. Two different growth techniques are being investigated. In one group of samples, the high-temperature GaN epitaxial layers were grown directly on HVPE-grown GaN/sapphire composite substrates. In another group of samples, intermediate-temperature buffer layers (ITBLs) of 800 nm thick were first deposited on top of the HVPE GaN templates by MBE before the growth of high-temperature epitaxial GaN layers. Substantial improvements in both the photoluminescence and the Hall mobility are observed for samples grown with the use of ITBLs.

Original languageEnglish
Number of pages4
Publication statusPublished - Jan 1 2001
Externally publishedYes
Event2001 IEEE Hong Kong Electron Devices Meeting - Hong Kong, China
Duration: Jun 30 2001 → …


Conference2001 IEEE Hong Kong Electron Devices Meeting
CityHong Kong
Period6/30/01 → …

ASJC Scopus subject areas

  • Engineering(all)

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