Characterization of GaN thin films on HVPE GaN templates

C. F. Zhu, W. K. Fong, B. H. Leung, N. H. Chan, C. Surya

Research output: Contribution to conferencePaper

Abstract

Homoepitaxial growth of GaN thin films by rf-plasma assisted MBE on HVPE templates is examined in detail. Two different growth techniques are being investigated. In one group of samples, the high-temperature GaN epitaxial layers were grown directly on HVPE-grown GaN/sapphire composite substrates. In another group of samples, intermediate-temperature buffer layers (ITBLs) of 800 nm thick were first deposited on top of the HVPE GaN templates by MBE before the growth of high-temperature epitaxial GaN layers. Substantial improvements in both the photoluminescence and the Hall mobility are observed for samples grown with the use of ITBLs.

Original languageEnglish
Pages140-143
Number of pages4
Publication statusPublished - Jan 1 2001
Externally publishedYes
Event2001 IEEE Hong Kong Electron Devices Meeting - Hong Kong, China
Duration: Jun 30 2001 → …

Conference

Conference2001 IEEE Hong Kong Electron Devices Meeting
CountryChina
CityHong Kong
Period6/30/01 → …

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Characterization of GaN thin films on HVPE GaN templates'. Together they form a unique fingerprint.

  • Cite this

    Zhu, C. F., Fong, W. K., Leung, B. H., Chan, N. H., & Surya, C. (2001). Characterization of GaN thin films on HVPE GaN templates. 140-143. Paper presented at 2001 IEEE Hong Kong Electron Devices Meeting, Hong Kong, China.