Characterization of hot-electron effects on flicker noise in III-V nitride based heterojunctions

W. Y. Ho, W. K. Fong, Charles Surya, K. Y. Tong, L. A.V. Lu, W. K. Ge

Research output: Contribution to journalConference article

Abstract

We report experiments on hot-electron stressing in commercial III-V nitride based heterojunction light-emitting diodes. Stressing currents ranging from 100 mA to 200 mA were used. Degradations in the device properties were investigated through detailed studies of the I-V characteristics, electroluminescence, Deep-Level Transient Fourier Spectroscopy and flicker noise. Our experimental data demonstrated significant distortions in the I-V characteristics. The room temperature electroluminescence of the devices exhibited 25% decrement in the peak emission intensity. Concentration of the deep-levels was examined by measuring the Deep-Level Transient Fourier Spectroscopy, which indicated an increase in the density of deep-traps from 2.7 × 1013 cm-3 to 4.21 × 1013 cm3 at E1 = EC - 1.1eV. The result is consistent with our study of 1/f noise, which exhibited up to three orders of magnitude increase in the voltage noise power spectra. Our experiments show large increase in both the interface traps and deep-levels resulted from hot-carrier stressing.

Original languageEnglish
JournalMaterials Research Society Symposium - Proceedings
Volume537
Publication statusPublished - Dec 1 1999
Externally publishedYes
EventProceedings of the 1998 MRS Fall Meeting - Symposium on 'GaN and Related Alloys' - Boston, MA, USA
Duration: Nov 30 1998Dec 4 1998

Fingerprint

flicker
Hot electrons
Electroluminescence
hot electrons
Nitrides
nitrides
Heterojunctions
heterojunctions
Spectroscopy
Hot carriers
Power spectrum
electroluminescence
Light emitting diodes
Experiments
traps
Degradation
Electric potential
noise spectra
spectroscopy
power spectra

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Characterization of hot-electron effects on flicker noise in III-V nitride based heterojunctions. / Ho, W. Y.; Fong, W. K.; Surya, Charles; Tong, K. Y.; Lu, L. A.V.; Ge, W. K.

In: Materials Research Society Symposium - Proceedings, Vol. 537, 01.12.1999.

Research output: Contribution to journalConference article

@article{2e0dc45ea59448859bde1c1c01e5554c,
title = "Characterization of hot-electron effects on flicker noise in III-V nitride based heterojunctions",
abstract = "We report experiments on hot-electron stressing in commercial III-V nitride based heterojunction light-emitting diodes. Stressing currents ranging from 100 mA to 200 mA were used. Degradations in the device properties were investigated through detailed studies of the I-V characteristics, electroluminescence, Deep-Level Transient Fourier Spectroscopy and flicker noise. Our experimental data demonstrated significant distortions in the I-V characteristics. The room temperature electroluminescence of the devices exhibited 25{\%} decrement in the peak emission intensity. Concentration of the deep-levels was examined by measuring the Deep-Level Transient Fourier Spectroscopy, which indicated an increase in the density of deep-traps from 2.7 × 1013 cm-3 to 4.21 × 1013 cm3 at E1 = EC - 1.1eV. The result is consistent with our study of 1/f noise, which exhibited up to three orders of magnitude increase in the voltage noise power spectra. Our experiments show large increase in both the interface traps and deep-levels resulted from hot-carrier stressing.",
author = "Ho, {W. Y.} and Fong, {W. K.} and Charles Surya and Tong, {K. Y.} and Lu, {L. A.V.} and Ge, {W. K.}",
year = "1999",
month = "12",
day = "1",
language = "English",
volume = "537",
journal = "Materials Research Society Symposium - Proceedings",
issn = "0272-9172",
publisher = "Materials Research Society",

}

TY - JOUR

T1 - Characterization of hot-electron effects on flicker noise in III-V nitride based heterojunctions

AU - Ho, W. Y.

AU - Fong, W. K.

AU - Surya, Charles

AU - Tong, K. Y.

AU - Lu, L. A.V.

AU - Ge, W. K.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - We report experiments on hot-electron stressing in commercial III-V nitride based heterojunction light-emitting diodes. Stressing currents ranging from 100 mA to 200 mA were used. Degradations in the device properties were investigated through detailed studies of the I-V characteristics, electroluminescence, Deep-Level Transient Fourier Spectroscopy and flicker noise. Our experimental data demonstrated significant distortions in the I-V characteristics. The room temperature electroluminescence of the devices exhibited 25% decrement in the peak emission intensity. Concentration of the deep-levels was examined by measuring the Deep-Level Transient Fourier Spectroscopy, which indicated an increase in the density of deep-traps from 2.7 × 1013 cm-3 to 4.21 × 1013 cm3 at E1 = EC - 1.1eV. The result is consistent with our study of 1/f noise, which exhibited up to three orders of magnitude increase in the voltage noise power spectra. Our experiments show large increase in both the interface traps and deep-levels resulted from hot-carrier stressing.

AB - We report experiments on hot-electron stressing in commercial III-V nitride based heterojunction light-emitting diodes. Stressing currents ranging from 100 mA to 200 mA were used. Degradations in the device properties were investigated through detailed studies of the I-V characteristics, electroluminescence, Deep-Level Transient Fourier Spectroscopy and flicker noise. Our experimental data demonstrated significant distortions in the I-V characteristics. The room temperature electroluminescence of the devices exhibited 25% decrement in the peak emission intensity. Concentration of the deep-levels was examined by measuring the Deep-Level Transient Fourier Spectroscopy, which indicated an increase in the density of deep-traps from 2.7 × 1013 cm-3 to 4.21 × 1013 cm3 at E1 = EC - 1.1eV. The result is consistent with our study of 1/f noise, which exhibited up to three orders of magnitude increase in the voltage noise power spectra. Our experiments show large increase in both the interface traps and deep-levels resulted from hot-carrier stressing.

UR - http://www.scopus.com/inward/record.url?scp=0033348638&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033348638&partnerID=8YFLogxK

M3 - Conference article

VL - 537

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

ER -