Characterization of hot-electron effects on flicker noise in III-V nitride based heterojunctions

W. Y. Ho, W. K. Fong, Charles Surya, K. Y. Tong, L. W. Lu, W. K. Ge

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


We report experiments on hot-electron stressing in commercial III-V nitride based heterojunction light-emitting diodes. Stressing currents ranging from 100 mA to 200 mA were used. Degradations in the device properties were investigated through detailed studies of the I-V characteristics, electroluminescence, Deep-Level Transient Fourier Spectroscopy and flicker noise. Our experimental data demonstrated significant distortions in the I-V characteristics. The room temperature electroluminescence of the devices exhibited 25% decrement in the peak emission intensity. Concentration of the deep-levels was examined by measuring the Deep-Level Transient Fourier Spectroscopy, which indicated an increase in the density of deep-traps from 2.7 × 1013 cm -3 to 4.21 × 1013 cm-3 at E1 = EC - 1.1eV. The result is consistent with our study of 1/f noise, which exhibited up to three orders of magnitude increase in the voltage noise power spectra. Our experiments show large increase in both the interface traps and deep-levels resulted from hot-carrier stressing.

Original languageEnglish
Pages (from-to)5d
JournalMRS Internet Journal of Nitride Semiconductor Research
Issue numberSUPPL. 1
Publication statusPublished - Dec 1 1999
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)

Fingerprint Dive into the research topics of 'Characterization of hot-electron effects on flicker noise in III-V nitride based heterojunctions'. Together they form a unique fingerprint.

Cite this