Characterization of low-frequency noise in molecular beam epitaxy-grown GaN epilayers deposited on double buffer layers

W. K. Fong, S. W. Ng, B. H. Leung, Charles Surya

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Abstract

The effect of different double buffer layers (DBL) systems on the quality of the GaN epilayers was investigated. The samples grown on DBL demonstrated enhanced Hall mobility with a maximum mobility of 520 cm2V-1s-1 at around 200 K for the film deposited. The results showed that using DBL structure, consisting of an A1N thin buffer layer/GaN intermediate-temperature buffer layer, lead to reduction in tensile stress at the growth temperature.

Original languageEnglish
Pages (from-to)387-391
Number of pages5
JournalJournal of Applied Physics
Volume94
Issue number1
DOIs
Publication statusPublished - Jul 1 2003
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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