Abstract
The effect of different double buffer layers (DBL) systems on the quality of the GaN epilayers was investigated. The samples grown on DBL demonstrated enhanced Hall mobility with a maximum mobility of 520 cm2V-1s-1 at around 200 K for the film deposited. The results showed that using DBL structure, consisting of an A1N thin buffer layer/GaN intermediate-temperature buffer layer, lead to reduction in tensile stress at the growth temperature.
Original language | English |
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Pages (from-to) | 387-391 |
Number of pages | 5 |
Journal | Journal of Applied Physics |
Volume | 94 |
Issue number | 1 |
DOIs | |
Publication status | Published - Jul 1 2003 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy(all)