The effect of different double buffer layers (DBL) systems on the quality of the GaN epilayers was investigated. The samples grown on DBL demonstrated enhanced Hall mobility with a maximum mobility of 520 cm2V-1s-1 at around 200 K for the film deposited. The results showed that using DBL structure, consisting of an A1N thin buffer layer/GaN intermediate-temperature buffer layer, lead to reduction in tensile stress at the growth temperature.
ASJC Scopus subject areas
- Physics and Astronomy(all)