Characterization of low-frequency noise in molecular beam epitaxy-grown GaN epilayers deposited on double buffer layers

W. K. Fong; S. W. Ng; B. H. Leung; Charles Surya

doi:10.1063/1.1579843

Characterization of low-frequency noise in molecular beam epitaxy-grown GaN epilayers deposited on double buffer layers

W. K. Fong, S. W. Ng, B. H. Leung, Charles Surya

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The effect of different double buffer layers (DBL) systems on the quality of the GaN epilayers was investigated. The samples grown on DBL demonstrated enhanced Hall mobility with a maximum mobility of 520 cm²V^-1s^-1 at around 200 K for the film deposited. The results showed that using DBL structure, consisting of an A1N thin buffer layer/GaN intermediate-temperature buffer layer, lead to reduction in tensile stress at the growth temperature.

Original language	English
Pages (from-to)	387-391
Number of pages	5
Journal	Journal of Applied Physics
Volume	94
Issue number	1
DOIs	https://doi.org/10.1063/1.1579843
Publication status	Published - Jul 1 2003
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.1579843

Fingerprint Dive into the research topics of 'Characterization of low-frequency noise in molecular beam epitaxy-grown GaN epilayers deposited on double buffer layers'. Together they form a unique fingerprint.

Cite this

@article{4a4f271d427d48fb8d1df8fc7ae993d2,

title = "Characterization of low-frequency noise in molecular beam epitaxy-grown GaN epilayers deposited on double buffer layers",

abstract = "The effect of different double buffer layers (DBL) systems on the quality of the GaN epilayers was investigated. The samples grown on DBL demonstrated enhanced Hall mobility with a maximum mobility of 520 cm2V-1s-1 at around 200 K for the film deposited. The results showed that using DBL structure, consisting of an A1N thin buffer layer/GaN intermediate-temperature buffer layer, lead to reduction in tensile stress at the growth temperature.",

author = "Fong, {W. K.} and Ng, {S. W.} and Leung, {B. H.} and Charles Surya",

year = "2003",

month = jul,

day = "1",

doi = "10.1063/1.1579843",

language = "English",

volume = "94",

pages = "387--391",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "1",

}

TY - JOUR

T1 - Characterization of low-frequency noise in molecular beam epitaxy-grown GaN epilayers deposited on double buffer layers

AU - Fong, W. K.

AU - Ng, S. W.

AU - Leung, B. H.

AU - Surya, Charles

PY - 2003/7/1

Y1 - 2003/7/1

N2 - The effect of different double buffer layers (DBL) systems on the quality of the GaN epilayers was investigated. The samples grown on DBL demonstrated enhanced Hall mobility with a maximum mobility of 520 cm2V-1s-1 at around 200 K for the film deposited. The results showed that using DBL structure, consisting of an A1N thin buffer layer/GaN intermediate-temperature buffer layer, lead to reduction in tensile stress at the growth temperature.

AB - The effect of different double buffer layers (DBL) systems on the quality of the GaN epilayers was investigated. The samples grown on DBL demonstrated enhanced Hall mobility with a maximum mobility of 520 cm2V-1s-1 at around 200 K for the film deposited. The results showed that using DBL structure, consisting of an A1N thin buffer layer/GaN intermediate-temperature buffer layer, lead to reduction in tensile stress at the growth temperature.

UR - http://www.scopus.com/inward/record.url?scp=0041339901&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0041339901&partnerID=8YFLogxK

U2 - 10.1063/1.1579843

DO - 10.1063/1.1579843

M3 - Article

AN - SCOPUS:0041339901

VL - 94

SP - 387

EP - 391

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 1

ER -

Characterization of low-frequency noise in molecular beam epitaxy-grown GaN epilayers deposited on double buffer layers

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Cite this