Characterization of low-frequency noise in molecular beam epitaxy-grown GaN epilayers deposited on double buffer layers

W. K. Fong; S. W. Ng; B. H. Leung; Charles Surya

doi:10.1063/1.1579843

Characterization of low-frequency noise in molecular beam epitaxy-grown GaN epilayers deposited on double buffer layers

W. K. Fong, S. W. Ng, B. H. Leung, Charles Surya

Research output: Contribution to journal › Article

3 Citations (Scopus)

Abstract

The effect of different double buffer layers (DBL) systems on the quality of the GaN epilayers was investigated. The samples grown on DBL demonstrated enhanced Hall mobility with a maximum mobility of 520 cm²V^-1s^-1 at around 200 K for the film deposited. The results showed that using DBL structure, consisting of an A1N thin buffer layer/GaN intermediate-temperature buffer layer, lead to reduction in tensile stress at the growth temperature.

Original language	English
Pages (from-to)	387-391
Number of pages	5
Journal	Journal of Applied Physics
Volume	94
Issue number	1
DOIs	https://doi.org/10.1063/1.1579843
Publication status	Published - Jul 1 2003
Externally published	Yes

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ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

Fong, W. K., Ng, S. W., Leung, B. H., & Surya, C. (2003). Characterization of low-frequency noise in molecular beam epitaxy-grown GaN epilayers deposited on double buffer layers. Journal of Applied Physics, 94(1), 387-391. https://doi.org/10.1063/1.1579843

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10.1063/1.1579843