Characterization of Pd/Ni/Au ohmic contacts on p-GaN

H. K. Cho; T. Hossain; J. W. Bae; I. Adesida

doi:10.1016/j.sse.2005.01.020

Characterization of Pd/Ni/Au ohmic contacts on p-GaN

H. K. Cho, T. Hossain, J. W. Bae, I. Adesida

Nazarbayev University

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

A low-resistance ohmic contact to Mg-doped p-type GaN grown by metal-organic chemical vapor deposition (MOCVD) with a carrier concentration of 2 × 10¹⁷ cm^-3 using Pd/Ni/Au metallization was formed. An anneal at 500 °C for 1 min in a flowing N₂ ambient produced an excellent ohmic contact with a specific contact resistivity as low as 2.4 × 10^-5 Ω cm². X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) depth profiles of Pd/Ni/Au contacts annealed at 500 °C demonstrated a strong correlation between Ni and Pd interdiffusion toward the GaN surface and a reduction in specific contact resistance. The low contact resistance is attributed to the reduction of the native oxide by Ni diffusion along with the formation of Pd and Ni related-gallide phases at the p-GaN surface region.

Original language	English
Pages (from-to)	774-778
Number of pages	5
Journal	Solid-State Electronics
Volume	49
Issue number	5
DOIs	https://doi.org/10.1016/j.sse.2005.01.020
Publication status	Published - May 2005

Keywords

Contact resistance
GaN
Intermetallic compounds
Ni
Pd

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "Characterization of Pd/Ni/Au ohmic contacts on p-GaN",

abstract = "A low-resistance ohmic contact to Mg-doped p-type GaN grown by metal-organic chemical vapor deposition (MOCVD) with a carrier concentration of 2 × 1017 cm-3 using Pd/Ni/Au metallization was formed. An anneal at 500 °C for 1 min in a flowing N2 ambient produced an excellent ohmic contact with a specific contact resistivity as low as 2.4 × 10-5 Ω cm2. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) depth profiles of Pd/Ni/Au contacts annealed at 500 °C demonstrated a strong correlation between Ni and Pd interdiffusion toward the GaN surface and a reduction in specific contact resistance. The low contact resistance is attributed to the reduction of the native oxide by Ni diffusion along with the formation of Pd and Ni related-gallide phases at the p-GaN surface region.",

keywords = "Contact resistance, GaN, Intermetallic compounds, Ni, Pd",

author = "Cho, {H. K.} and T. Hossain and Bae, {J. W.} and I. Adesida",

note = "Funding Information: This work was supported by the Post-doctoral Fellowship Program of Korea Science and Engineering Foundation (KOSEF) and by DARPA contract DAAD 19-02-1-0419 (Program Managers: Dr. J. Carrano and Dr. J. Zavada). Also, parts of this work were carried out in the Center for Microanalysis of Materials, University of Illinois, which is partially supported by the US Department of Energy under grant DEFG02-91-ER45439.",

year = "2005",

month = may,

doi = "10.1016/j.sse.2005.01.020",

language = "English",

volume = "49",

pages = "774--778",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier",

number = "5",

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T1 - Characterization of Pd/Ni/Au ohmic contacts on p-GaN

AU - Cho, H. K.

AU - Hossain, T.

AU - Bae, J. W.

AU - Adesida, I.

N1 - Funding Information: This work was supported by the Post-doctoral Fellowship Program of Korea Science and Engineering Foundation (KOSEF) and by DARPA contract DAAD 19-02-1-0419 (Program Managers: Dr. J. Carrano and Dr. J. Zavada). Also, parts of this work were carried out in the Center for Microanalysis of Materials, University of Illinois, which is partially supported by the US Department of Energy under grant DEFG02-91-ER45439.

PY - 2005/5

Y1 - 2005/5

N2 - A low-resistance ohmic contact to Mg-doped p-type GaN grown by metal-organic chemical vapor deposition (MOCVD) with a carrier concentration of 2 × 1017 cm-3 using Pd/Ni/Au metallization was formed. An anneal at 500 °C for 1 min in a flowing N2 ambient produced an excellent ohmic contact with a specific contact resistivity as low as 2.4 × 10-5 Ω cm2. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) depth profiles of Pd/Ni/Au contacts annealed at 500 °C demonstrated a strong correlation between Ni and Pd interdiffusion toward the GaN surface and a reduction in specific contact resistance. The low contact resistance is attributed to the reduction of the native oxide by Ni diffusion along with the formation of Pd and Ni related-gallide phases at the p-GaN surface region.

AB - A low-resistance ohmic contact to Mg-doped p-type GaN grown by metal-organic chemical vapor deposition (MOCVD) with a carrier concentration of 2 × 1017 cm-3 using Pd/Ni/Au metallization was formed. An anneal at 500 °C for 1 min in a flowing N2 ambient produced an excellent ohmic contact with a specific contact resistivity as low as 2.4 × 10-5 Ω cm2. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) depth profiles of Pd/Ni/Au contacts annealed at 500 °C demonstrated a strong correlation between Ni and Pd interdiffusion toward the GaN surface and a reduction in specific contact resistance. The low contact resistance is attributed to the reduction of the native oxide by Ni diffusion along with the formation of Pd and Ni related-gallide phases at the p-GaN surface region.

KW - Contact resistance

KW - GaN

KW - Intermetallic compounds

KW - Ni

KW - Pd

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