CHARACTERIZATION OF REACTIVE ION BEAM AND ION BEAM ASSISTED ETCHING USING DIRECT ION MASS ANALYSIS AND EMISSION SPECTROSCOPY.

J. D. Chinn, I. Adesida, E. D. Wolf

Research output: Contribution to journalConference article

Abstract

With recent improvements in broad-beam ion source technology, several beam etching techniques have been developed for VLSI microfabrication including ion milling, reactive ion beam etching and ion beam assisted etching. Investigations were conducted to measure the ionic species extracted from the ion source as the background ambient was varied in the ion beam assisted etching mode. Emission spectroscopy has long been used for plasma diagnostics. This technique provides valuable real-time and a external diagnostics of the ionic species. Investigations using emission spectroscopy with other chlorinated gases have shown similar characteristics and will be presented.

Original languageEnglish
Pages (from-to)518-519
Number of pages2
JournalElectrochemical Society Extended Abstracts
Volume84-2
Publication statusPublished - Dec 1 1984

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ASJC Scopus subject areas

  • Engineering(all)

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