CHARACTERIZATION OF REACTIVE ION BEAM AND ION BEAM ASSISTED ETCHING USING DIRECT ION MASS ANALYSIS AND EMISSION SPECTROSCOPY.

J. D. Chinn, I. Adesida, E. D. Wolf

Research output: Contribution to journalArticle

Abstract

With recent improvements in broad-beam ion source technology, several beam etching techniques have been developed for VLSI microfabrication including ion milling, reactive ion beam etching and ion beam assisted etching. Investigations were conducted to measure the ionic species extracted from the ion source as the background ambient was varied in the ion beam assisted etching mode. Emission spectroscopy has long been used for plasma diagnostics. This technique provides valuable real-time and a external diagnostics of the ionic species. Investigations using emission spectroscopy with other chlorinated gases have shown similar characteristics and will be presented.

Original languageEnglish
Pages (from-to)518-519
Number of pages2
JournalElectrochemical Society Extended Abstracts
Volume84-2
Publication statusPublished - 1984
Externally publishedYes

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Emission spectroscopy
Ion beams
Etching
Ions
Ion sources
Plasma diagnostics
Microfabrication
Gases

ASJC Scopus subject areas

  • Engineering(all)

Cite this

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title = "CHARACTERIZATION OF REACTIVE ION BEAM AND ION BEAM ASSISTED ETCHING USING DIRECT ION MASS ANALYSIS AND EMISSION SPECTROSCOPY.",
abstract = "With recent improvements in broad-beam ion source technology, several beam etching techniques have been developed for VLSI microfabrication including ion milling, reactive ion beam etching and ion beam assisted etching. Investigations were conducted to measure the ionic species extracted from the ion source as the background ambient was varied in the ion beam assisted etching mode. Emission spectroscopy has long been used for plasma diagnostics. This technique provides valuable real-time and a external diagnostics of the ionic species. Investigations using emission spectroscopy with other chlorinated gases have shown similar characteristics and will be presented.",
author = "Chinn, {J. D.} and I. Adesida and Wolf, {E. D.}",
year = "1984",
language = "English",
volume = "84-2",
pages = "518--519",
journal = "Electrochemical Society Extended Abstracts",
issn = "0160-4619",

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T1 - CHARACTERIZATION OF REACTIVE ION BEAM AND ION BEAM ASSISTED ETCHING USING DIRECT ION MASS ANALYSIS AND EMISSION SPECTROSCOPY.

AU - Chinn, J. D.

AU - Adesida, I.

AU - Wolf, E. D.

PY - 1984

Y1 - 1984

N2 - With recent improvements in broad-beam ion source technology, several beam etching techniques have been developed for VLSI microfabrication including ion milling, reactive ion beam etching and ion beam assisted etching. Investigations were conducted to measure the ionic species extracted from the ion source as the background ambient was varied in the ion beam assisted etching mode. Emission spectroscopy has long been used for plasma diagnostics. This technique provides valuable real-time and a external diagnostics of the ionic species. Investigations using emission spectroscopy with other chlorinated gases have shown similar characteristics and will be presented.

AB - With recent improvements in broad-beam ion source technology, several beam etching techniques have been developed for VLSI microfabrication including ion milling, reactive ion beam etching and ion beam assisted etching. Investigations were conducted to measure the ionic species extracted from the ion source as the background ambient was varied in the ion beam assisted etching mode. Emission spectroscopy has long been used for plasma diagnostics. This technique provides valuable real-time and a external diagnostics of the ionic species. Investigations using emission spectroscopy with other chlorinated gases have shown similar characteristics and will be presented.

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M3 - Article

VL - 84-2

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JO - Electrochemical Society Extended Abstracts

JF - Electrochemical Society Extended Abstracts

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