Characterization of rhenium Schottky contacts on n-type AlxGa1-xN

L. Zhou, A. T. Ping, K. Boutros, J. Redwing, I. Adesida

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

The electrical characteristics of Re Schottky contacts on AlxGa1-xN (x = 0, 0.15, 0.22 and 0.26) grown by MOCVD on sapphire substrates have been investigated. The effective barrier heights were obtained from current-voltage and capacitance-voltage measurements and were found to increase with aluminum concentration.

Original languageEnglish
Pages (from-to)745-746
Number of pages2
JournalElectronics Letters
Volume35
Issue number9
DOIs
Publication statusPublished - Apr 29 1999
Externally publishedYes

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Rhenium
Capacitance measurement
Voltage measurement
Metallorganic chemical vapor deposition
Sapphire
Aluminum
Electric potential
Substrates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Characterization of rhenium Schottky contacts on n-type AlxGa1-xN. / Zhou, L.; Ping, A. T.; Boutros, K.; Redwing, J.; Adesida, I.

In: Electronics Letters, Vol. 35, No. 9, 29.04.1999, p. 745-746.

Research output: Contribution to journalArticle

Zhou, L. ; Ping, A. T. ; Boutros, K. ; Redwing, J. ; Adesida, I. / Characterization of rhenium Schottky contacts on n-type AlxGa1-xN. In: Electronics Letters. 1999 ; Vol. 35, No. 9. pp. 745-746.
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