Characterization of selective reactive ion etching effects on delta-doped GaAs/AlGaAs MODFET layers

S. Agarwala, M. Tong, D. G. Ballegeer, K. Nummila, A. A. Ketterson, I. Adesida

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The effects of selective reactive ion etching (SRIE) using SiCl4/SiF4 plasma on delta-doped GaAs/Al0.3Ga0.7As modulation-doped field-effect transistor (MODFET) structures and devices have been investigated. The results are compared with those of corresponding conventionally doped MODFETs. Hall measurements were conducted at 300 and 77 K to characterize the change in the transport properties of the two-dimensional electron gas due to low energy ion bombardment during the SRIE process. Delta-doped structures showed a smaller change in sheet carrier density and mobility compared to conventionally doped structures. Direct current and high frequency measurements were performed on the SRIE gate-recessed MODFETs. No significant change in threshold voltage was observed for the delta-doped MODFETs in contrast to an increase of about 300 mV for the conventionally doped MODFETs processed at a plasma self-bias voltage of -90 V and a 1200% overetch time. Maximum dc extrinsic transconductance and unity current gain cutoff frequency did not change with SRIE processing for either of the structures.

Original languageEnglish
Pages (from-to)375-381
Number of pages7
JournalJournal of Electronic Materials
Volume22
Issue number4
DOIs
Publication statusPublished - Apr 1993
Externally publishedYes

Fingerprint

Reactive ion etching
High electron mobility transistors
aluminum gallium arsenides
field effect transistors
etching
modulation
ions
Plasmas
Two dimensional electron gas
Carrier mobility
frequency measurement
Cutoff frequency
Transconductance
transconductance
Ion bombardment
Bias voltage
carrier mobility
Threshold voltage
threshold voltage
Transport properties

Keywords

  • Delta-doped MODFET
  • selective reactive ion etching

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Electrical and Electronic Engineering

Cite this

Characterization of selective reactive ion etching effects on delta-doped GaAs/AlGaAs MODFET layers. / Agarwala, S.; Tong, M.; Ballegeer, D. G.; Nummila, K.; Ketterson, A. A.; Adesida, I.

In: Journal of Electronic Materials, Vol. 22, No. 4, 04.1993, p. 375-381.

Research output: Contribution to journalArticle

Agarwala, S. ; Tong, M. ; Ballegeer, D. G. ; Nummila, K. ; Ketterson, A. A. ; Adesida, I. / Characterization of selective reactive ion etching effects on delta-doped GaAs/AlGaAs MODFET layers. In: Journal of Electronic Materials. 1993 ; Vol. 22, No. 4. pp. 375-381.
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