Characterization of sidewall roughness of InP/InGaAsP etched using inductively coupled plasma for low loss optical waveguide applications

J. W. Bae, W. Zhao, J. H. Jang, I. Adesida, A. Lepore, M. Kwakernaak, J. H. Abeles

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The atomic force microscopy was used to analyze the effects of etch depth on the sidewall roughness (SWR) of InGaAsP/InP waveguides. The waveguides were etched in an inductively coupled plasma-reactive ion etching to depths ranging from 4 to 8 μm. The waveguides were fabricated using NiCr/SiO 2 and SiO 2/NiCr/SiO 2 masks. The results show that SWR increased with the etch time due to the increase in the mask erosion during etching.

Original languageEnglish
Pages (from-to)2888-2891
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume21
Issue number6
Publication statusPublished - Nov 2003
Externally publishedYes

Fingerprint

Inductively coupled plasma
Optical waveguides
optical waveguides
Waveguides
roughness
Surface roughness
waveguides
Masks
masks
etching
Plasma etching
Reactive ion etching
erosion
Erosion
Etching
Atomic force microscopy
atomic force microscopy
ions

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Characterization of sidewall roughness of InP/InGaAsP etched using inductively coupled plasma for low loss optical waveguide applications. / Bae, J. W.; Zhao, W.; Jang, J. H.; Adesida, I.; Lepore, A.; Kwakernaak, M.; Abeles, J. H.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 6, 11.2003, p. 2888-2891.

Research output: Contribution to journalArticle

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