Characterizations of InGaN/GaN MQWs with different growth parameters

K. K. Leung, W. K. Fong, C. Surya

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We investigated the effects of the growth parameters on the microstructural, optoelectronic and low-frequency noise properties of InGaN/GaN multiple quantum well (MQW). Dc current stress was applied to the devices and their degradations were investigated as a function of the stress time.

Original languageEnglish
Title of host publication2009 14th OptoElectronics and Communications Conference, OECC 2009
DOIs
Publication statusPublished - Nov 10 2009
Externally publishedYes
Event2009 14th OptoElectronics and Communications Conference, OECC 2009 - Hong Kong, China
Duration: Jul 13 2009 → Jul 17 2009

Conference

Conference2009 14th OptoElectronics and Communications Conference, OECC 2009
CountryChina
CityHong Kong
Period7/13/09 → 7/17/09

Fingerprint

Optoelectronic devices
Semiconductor quantum wells
Degradation
time

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Communication

Cite this

Leung, K. K., Fong, W. K., & Surya, C. (2009). Characterizations of InGaN/GaN MQWs with different growth parameters. In 2009 14th OptoElectronics and Communications Conference, OECC 2009 [5220553] https://doi.org/10.1109/OECC.2009.5220553

Characterizations of InGaN/GaN MQWs with different growth parameters. / Leung, K. K.; Fong, W. K.; Surya, C.

2009 14th OptoElectronics and Communications Conference, OECC 2009. 2009. 5220553.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Leung, KK, Fong, WK & Surya, C 2009, Characterizations of InGaN/GaN MQWs with different growth parameters. in 2009 14th OptoElectronics and Communications Conference, OECC 2009., 5220553, 2009 14th OptoElectronics and Communications Conference, OECC 2009, Hong Kong, China, 7/13/09. https://doi.org/10.1109/OECC.2009.5220553
Leung KK, Fong WK, Surya C. Characterizations of InGaN/GaN MQWs with different growth parameters. In 2009 14th OptoElectronics and Communications Conference, OECC 2009. 2009. 5220553 https://doi.org/10.1109/OECC.2009.5220553
Leung, K. K. ; Fong, W. K. ; Surya, C. / Characterizations of InGaN/GaN MQWs with different growth parameters. 2009 14th OptoElectronics and Communications Conference, OECC 2009. 2009.
@inproceedings{1a58eaf1326b42e28a67b4f48a2611dc,
title = "Characterizations of InGaN/GaN MQWs with different growth parameters",
abstract = "We investigated the effects of the growth parameters on the microstructural, optoelectronic and low-frequency noise properties of InGaN/GaN multiple quantum well (MQW). Dc current stress was applied to the devices and their degradations were investigated as a function of the stress time.",
author = "Leung, {K. K.} and Fong, {W. K.} and C. Surya",
year = "2009",
month = "11",
day = "10",
doi = "10.1109/OECC.2009.5220553",
language = "English",
isbn = "9781424441037",
booktitle = "2009 14th OptoElectronics and Communications Conference, OECC 2009",

}

TY - GEN

T1 - Characterizations of InGaN/GaN MQWs with different growth parameters

AU - Leung, K. K.

AU - Fong, W. K.

AU - Surya, C.

PY - 2009/11/10

Y1 - 2009/11/10

N2 - We investigated the effects of the growth parameters on the microstructural, optoelectronic and low-frequency noise properties of InGaN/GaN multiple quantum well (MQW). Dc current stress was applied to the devices and their degradations were investigated as a function of the stress time.

AB - We investigated the effects of the growth parameters on the microstructural, optoelectronic and low-frequency noise properties of InGaN/GaN multiple quantum well (MQW). Dc current stress was applied to the devices and their degradations were investigated as a function of the stress time.

UR - http://www.scopus.com/inward/record.url?scp=70350714921&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70350714921&partnerID=8YFLogxK

U2 - 10.1109/OECC.2009.5220553

DO - 10.1109/OECC.2009.5220553

M3 - Conference contribution

SN - 9781424441037

BT - 2009 14th OptoElectronics and Communications Conference, OECC 2009

ER -

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