Characterizations of InGaN/GaN MQWs with different growth parameters

K. K. Leung, W. K. Fong, C. Surya

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigated the effects of the growth parameters on the microstructural, optoelectronic and low-frequency noise properties of InGaN/GaN multiple quantum well (MQW). Dc current stress was applied to the devices and their degradations were investigated as a function of the stress time.

Original languageEnglish
Title of host publication2009 14th OptoElectronics and Communications Conference, OECC 2009
DOIs
Publication statusPublished - Nov 10 2009
Externally publishedYes
Event2009 14th OptoElectronics and Communications Conference, OECC 2009 - Hong Kong, China
Duration: Jul 13 2009Jul 17 2009

Publication series

Name2009 14th OptoElectronics and Communications Conference, OECC 2009

Conference

Conference2009 14th OptoElectronics and Communications Conference, OECC 2009
CountryChina
CityHong Kong
Period7/13/097/17/09

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Communication

Cite this

Leung, K. K., Fong, W. K., & Surya, C. (2009). Characterizations of InGaN/GaN MQWs with different growth parameters. In 2009 14th OptoElectronics and Communications Conference, OECC 2009 [5220553] (2009 14th OptoElectronics and Communications Conference, OECC 2009). https://doi.org/10.1109/OECC.2009.5220553