Characterizations of InGaN/GaN MQWs with different growth parameters

K. K. Leung; W. K. Fong; C. Surya

doi:10.1109/OECC.2009.5220553

Characterizations of InGaN/GaN MQWs with different growth parameters

K. K. Leung, W. K. Fong, C. Surya

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We investigated the effects of the growth parameters on the microstructural, optoelectronic and low-frequency noise properties of InGaN/GaN multiple quantum well (MQW). Dc current stress was applied to the devices and their degradations were investigated as a function of the stress time.

Original language	English
Title of host publication	2009 14th OptoElectronics and Communications Conference, OECC 2009
DOIs	https://doi.org/10.1109/OECC.2009.5220553
Publication status	Published - Nov 10 2009
Externally published	Yes
Event	2009 14th OptoElectronics and Communications Conference, OECC 2009 - Hong Kong, China Duration: Jul 13 2009 → Jul 17 2009

Publication series

Name	2009 14th OptoElectronics and Communications Conference, OECC 2009

Conference

Conference	2009 14th OptoElectronics and Communications Conference, OECC 2009
Country	China
City	Hong Kong
Period	7/13/09 → 7/17/09

ASJC Scopus subject areas

Electrical and Electronic Engineering
Communication

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Leung, KK, Fong, WK & Surya, C 2009, Characterizations of InGaN/GaN MQWs with different growth parameters. in 2009 14th OptoElectronics and Communications Conference, OECC 2009., 5220553, 2009 14th OptoElectronics and Communications Conference, OECC 2009, 2009 14th OptoElectronics and Communications Conference, OECC 2009, Hong Kong, China, 7/13/09. https://doi.org/10.1109/OECC.2009.5220553

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title = "Characterizations of InGaN/GaN MQWs with different growth parameters",

abstract = "We investigated the effects of the growth parameters on the microstructural, optoelectronic and low-frequency noise properties of InGaN/GaN multiple quantum well (MQW). Dc current stress was applied to the devices and their degradations were investigated as a function of the stress time.",

author = "Leung, {K. K.} and Fong, {W. K.} and C. Surya",

year = "2009",

month = nov,

day = "10",

doi = "10.1109/OECC.2009.5220553",

language = "English",

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AU - Fong, W. K.

AU - Surya, C.

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Y1 - 2009/11/10

N2 - We investigated the effects of the growth parameters on the microstructural, optoelectronic and low-frequency noise properties of InGaN/GaN multiple quantum well (MQW). Dc current stress was applied to the devices and their degradations were investigated as a function of the stress time.

AB - We investigated the effects of the growth parameters on the microstructural, optoelectronic and low-frequency noise properties of InGaN/GaN multiple quantum well (MQW). Dc current stress was applied to the devices and their degradations were investigated as a function of the stress time.

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DO - 10.1109/OECC.2009.5220553

M3 - Conference contribution

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SN - 9781424441037

T3 - 2009 14th OptoElectronics and Communications Conference, OECC 2009

BT - 2009 14th OptoElectronics and Communications Conference, OECC 2009

T2 - 2009 14th OptoElectronics and Communications Conference, OECC 2009

Y2 - 13 July 2009 through 17 July 2009

ER -

Characterizations of InGaN/GaN MQWs with different growth parameters

Abstract

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