TY - GEN
T1 - Characterizations of InGaN/GaN MQWs with different growth parameters
AU - Leung, K. K.
AU - Fong, W. K.
AU - Surya, C.
PY - 2009/11/10
Y1 - 2009/11/10
N2 - We investigated the effects of the growth parameters on the microstructural, optoelectronic and low-frequency noise properties of InGaN/GaN multiple quantum well (MQW). Dc current stress was applied to the devices and their degradations were investigated as a function of the stress time.
AB - We investigated the effects of the growth parameters on the microstructural, optoelectronic and low-frequency noise properties of InGaN/GaN multiple quantum well (MQW). Dc current stress was applied to the devices and their degradations were investigated as a function of the stress time.
UR - http://www.scopus.com/inward/record.url?scp=70350714921&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=70350714921&partnerID=8YFLogxK
U2 - 10.1109/OECC.2009.5220553
DO - 10.1109/OECC.2009.5220553
M3 - Conference contribution
AN - SCOPUS:70350714921
SN - 9781424441037
T3 - 2009 14th OptoElectronics and Communications Conference, OECC 2009
BT - 2009 14th OptoElectronics and Communications Conference, OECC 2009
T2 - 2009 14th OptoElectronics and Communications Conference, OECC 2009
Y2 - 13 July 2009 through 17 July 2009
ER -