Anisotype n-TiO2/p-Si heterojunctions are fabricated by the deposition of a TiO2 film on a polished poly-Si substrate using magnetron sputtering. The electrical properties of the heterojunctions are investigated and the dominant charge transport mechanisms are established; these are multi-step tunneling recombination via surface states at the metallurgical TiO2/Si interface at low forward biases V and tunneling at V > 0.6 V. The reverse current through the heterojunctions under study is analyzed within the tunneling mechanism.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics