Charge transport mechanisms in anisotype n-TiO2/p-Si heterostructures

A. I. Mostovyi; V. V. Brus; P. D. Maryanchuk

doi:10.1134/S1063782613060171

Charge transport mechanisms in anisotype n-TiO₂/p-Si heterostructures

A. I. Mostovyi, V. V. Brus, P. D. Maryanchuk

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Anisotype n-TiO₂/p-Si heterojunctions are fabricated by the deposition of a TiO₂ film on a polished poly-Si substrate using magnetron sputtering. The electrical properties of the heterojunctions are investigated and the dominant charge transport mechanisms are established; these are multi-step tunneling recombination via surface states at the metallurgical TiO₂/Si interface at low forward biases V and tunneling at V > 0.6 V. The reverse current through the heterojunctions under study is analyzed within the tunneling mechanism.

Original language	English
Pages (from-to)	799-803
Number of pages	5
Journal	Semiconductors
Volume	47
Issue number	6
DOIs	https://doi.org/10.1134/S1063782613060171
Publication status	Published - Jun 2013
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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abstract = "Anisotype n-TiO2/p-Si heterojunctions are fabricated by the deposition of a TiO2 film on a polished poly-Si substrate using magnetron sputtering. The electrical properties of the heterojunctions are investigated and the dominant charge transport mechanisms are established; these are multi-step tunneling recombination via surface states at the metallurgical TiO2/Si interface at low forward biases V and tunneling at V > 0.6 V. The reverse current through the heterojunctions under study is analyzed within the tunneling mechanism.",

author = "Mostovyi, {A. I.} and Brus, {V. V.} and Maryanchuk, {P. D.}",

year = "2013",

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AU - Brus, V. V.

AU - Maryanchuk, P. D.

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AB - Anisotype n-TiO2/p-Si heterojunctions are fabricated by the deposition of a TiO2 film on a polished poly-Si substrate using magnetron sputtering. The electrical properties of the heterojunctions are investigated and the dominant charge transport mechanisms are established; these are multi-step tunneling recombination via surface states at the metallurgical TiO2/Si interface at low forward biases V and tunneling at V > 0.6 V. The reverse current through the heterojunctions under study is analyzed within the tunneling mechanism.

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