Charge transport mechanisms in anisotype n-TiO2/p-Si heterostructures

A. I. Mostovyi, V. V. Brus, P. D. Maryanchuk

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

Anisotype n-TiO2/p-Si heterojunctions are fabricated by the deposition of a TiO2 film on a polished poly-Si substrate using magnetron sputtering. The electrical properties of the heterojunctions are investigated and the dominant charge transport mechanisms are established; these are multi-step tunneling recombination via surface states at the metallurgical TiO2/Si interface at low forward biases V and tunneling at V > 0.6 V. The reverse current through the heterojunctions under study is analyzed within the tunneling mechanism.

Original languageEnglish
Pages (from-to)799-803
Number of pages5
JournalSemiconductors
Volume47
Issue number6
DOIs
Publication statusPublished - Jun 2013
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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