n-TiO2:Cr2O3/p-Si anisotype heterostructures are fabricated by the deposition of a TiO2: Cr2O3 film by electron-beam evaporation onto a polished polycrystalline silicon substrate. Their electrical properties are studied and the dominant charge-transport mechanisms are determined: multistage tunneling-recombination mechanism involving surface states at the TiO2: Cr2O3/Si metallurgical interface under small forward biases and tunneling at biases exceeding 0.8 V. The reverse currents through the heterostructures under study are analyzed in terms of the single-stage tunneling mechanism of charge transport.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics