Charge-transport mechanisms in heterostructures based on TiO2:Cr2O3 thin films

A. I. Mostovoi, V. V. Brus, P. D. Maryanchuk

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

n-TiO2:Cr2O3/p-Si anisotype heterostructures are fabricated by the deposition of a TiO2: Cr2O3 film by electron-beam evaporation onto a polished polycrystalline silicon substrate. Their electrical properties are studied and the dominant charge-transport mechanisms are determined: multistage tunneling-recombination mechanism involving surface states at the TiO2: Cr2O3/Si metallurgical interface under small forward biases and tunneling at biases exceeding 0.8 V. The reverse currents through the heterostructures under study are analyzed in terms of the single-stage tunneling mechanism of charge transport.

Original languageEnglish
Pages (from-to)1174-1177
Number of pages4
JournalSemiconductors
Volume48
Issue number9
DOIs
Publication statusPublished - Sep 2014
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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