Chemically assisted ion beam etching of gallium nitride

A. T. Ping, C. Youtsey, I. Adesida, M. Asif Khan, J. N. Kuznia

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

Chemically assisted ion beam etching of gallium nitride (GaN) grown by metalorganic chemical vapor deposition has been characterized using an Ar ion beam and Cl2gas. The etch rate of GaN was found to increase linearly with Ar ion beam current density, increase linearly then saturate with Ar ion beam energy, vary slightly with Cl2 flow rate, and lastly, increase moderately with substrate temperature. Etch rates as high as 330 nm/min were obtained at high beam energies and 210 nm/min at a more nominal level of 500 eV. The anisotropy of etched profiles improved in the presence of Cl2 in comparison to those etched by Ar ion milling only. Elevated substrate temperatures further enhanced the anisotropy to obtain near-vertical profiles for fairly deep-etched structures. Auger electron spectroscopy was used to investigate etch-induced surface changes. Oxygen contamination was observed on the as-etched surface but a dilute HC1 treatment restored the stoichiometry of the material to its unetched state.

Original languageEnglish
Pages (from-to)229-234
Number of pages6
JournalJournal of Electronic Materials
Volume24
Issue number4
DOIs
Publication statusPublished - Apr 1995
Externally publishedYes

Fingerprint

Gallium nitride
gallium nitrides
Ion beams
Etching
ion beams
etching
Anisotropy
anisotropy
Metallorganic chemical vapor deposition
Substrates
Auger electron spectroscopy
profiles
beam currents
Stoichiometry
Auger spectroscopy
metalorganic chemical vapor deposition
electron spectroscopy
stoichiometry
contamination
Contamination

Keywords

  • Chemically assisted ion beam etching
  • gallium nitride (GaN)

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Electrical and Electronic Engineering

Cite this

Chemically assisted ion beam etching of gallium nitride. / Ping, A. T.; Youtsey, C.; Adesida, I.; Khan, M. Asif; Kuznia, J. N.

In: Journal of Electronic Materials, Vol. 24, No. 4, 04.1995, p. 229-234.

Research output: Contribution to journalArticle

Ping, A. T. ; Youtsey, C. ; Adesida, I. ; Khan, M. Asif ; Kuznia, J. N. / Chemically assisted ion beam etching of gallium nitride. In: Journal of Electronic Materials. 1995 ; Vol. 24, No. 4. pp. 229-234.
@article{fd38020ff29b4e44b9a7138ea7cb0a73,
title = "Chemically assisted ion beam etching of gallium nitride",
abstract = "Chemically assisted ion beam etching of gallium nitride (GaN) grown by metalorganic chemical vapor deposition has been characterized using an Ar ion beam and Cl2gas. The etch rate of GaN was found to increase linearly with Ar ion beam current density, increase linearly then saturate with Ar ion beam energy, vary slightly with Cl2 flow rate, and lastly, increase moderately with substrate temperature. Etch rates as high as 330 nm/min were obtained at high beam energies and 210 nm/min at a more nominal level of 500 eV. The anisotropy of etched profiles improved in the presence of Cl2 in comparison to those etched by Ar ion milling only. Elevated substrate temperatures further enhanced the anisotropy to obtain near-vertical profiles for fairly deep-etched structures. Auger electron spectroscopy was used to investigate etch-induced surface changes. Oxygen contamination was observed on the as-etched surface but a dilute HC1 treatment restored the stoichiometry of the material to its unetched state.",
keywords = "Chemically assisted ion beam etching, gallium nitride (GaN)",
author = "Ping, {A. T.} and C. Youtsey and I. Adesida and Khan, {M. Asif} and Kuznia, {J. N.}",
year = "1995",
month = "4",
doi = "10.1007/BF02659680",
language = "English",
volume = "24",
pages = "229--234",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "4",

}

TY - JOUR

T1 - Chemically assisted ion beam etching of gallium nitride

AU - Ping, A. T.

AU - Youtsey, C.

AU - Adesida, I.

AU - Khan, M. Asif

AU - Kuznia, J. N.

PY - 1995/4

Y1 - 1995/4

N2 - Chemically assisted ion beam etching of gallium nitride (GaN) grown by metalorganic chemical vapor deposition has been characterized using an Ar ion beam and Cl2gas. The etch rate of GaN was found to increase linearly with Ar ion beam current density, increase linearly then saturate with Ar ion beam energy, vary slightly with Cl2 flow rate, and lastly, increase moderately with substrate temperature. Etch rates as high as 330 nm/min were obtained at high beam energies and 210 nm/min at a more nominal level of 500 eV. The anisotropy of etched profiles improved in the presence of Cl2 in comparison to those etched by Ar ion milling only. Elevated substrate temperatures further enhanced the anisotropy to obtain near-vertical profiles for fairly deep-etched structures. Auger electron spectroscopy was used to investigate etch-induced surface changes. Oxygen contamination was observed on the as-etched surface but a dilute HC1 treatment restored the stoichiometry of the material to its unetched state.

AB - Chemically assisted ion beam etching of gallium nitride (GaN) grown by metalorganic chemical vapor deposition has been characterized using an Ar ion beam and Cl2gas. The etch rate of GaN was found to increase linearly with Ar ion beam current density, increase linearly then saturate with Ar ion beam energy, vary slightly with Cl2 flow rate, and lastly, increase moderately with substrate temperature. Etch rates as high as 330 nm/min were obtained at high beam energies and 210 nm/min at a more nominal level of 500 eV. The anisotropy of etched profiles improved in the presence of Cl2 in comparison to those etched by Ar ion milling only. Elevated substrate temperatures further enhanced the anisotropy to obtain near-vertical profiles for fairly deep-etched structures. Auger electron spectroscopy was used to investigate etch-induced surface changes. Oxygen contamination was observed on the as-etched surface but a dilute HC1 treatment restored the stoichiometry of the material to its unetched state.

KW - Chemically assisted ion beam etching

KW - gallium nitride (GaN)

UR - http://www.scopus.com/inward/record.url?scp=51249168527&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=51249168527&partnerID=8YFLogxK

U2 - 10.1007/BF02659680

DO - 10.1007/BF02659680

M3 - Article

VL - 24

SP - 229

EP - 234

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 4

ER -