Cluster ion bombardment-induced surface damage of Si

C. E. Ascheron, M. Akizuki, J. Matsuo, Z. Insepov, G. H. Takaoka, I. Yamada

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Surface damage of single-crystalline Si caused by irradiation with Ar-ion cluster beams of different energies has been studied in comparison with that caused by Ar-monomer ion beams. The defected layers have been characterized by RBS channeling, XTEM, and ellipsometry. The experimental results are interpreted on the basis of TRIM and molecular dynamics simulations of the interaction processes with the target. It is found that cluster irradiation damages only a very thin near-surface layer which has a smooth interface to the undamaged substrate. Cluster-ion bombardment forms an oxide layer on the surface by the activation of adsorbed O atoms and substrate atoms.

Original languageEnglish
Pages (from-to)1045-1049
Number of pages5
JournalSurface Review and Letters
Volume3
Issue number1
DOIs
Publication statusPublished - Feb 1996

    Fingerprint

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Ascheron, C. E., Akizuki, M., Matsuo, J., Insepov, Z., Takaoka, G. H., & Yamada, I. (1996). Cluster ion bombardment-induced surface damage of Si. Surface Review and Letters, 3(1), 1045-1049. https://doi.org/10.1142/S0218625X9600187X