CMOS-memristor dendrite threshold circuits

Askhat Zhanbossinov, Kamilya Smagulova, Alex Pappachen James

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Non-linear neuron models overcomes the limitations of linear binary models of neurons that have the inability to compute linearly non-separable functions such as XOR. While several biologically plausible models based on dendrite thresholds are reported in the previous studies, the hardware implementation of such non-linear neuron models remain as an open problem. In this paper, we propose a circuit design for implementing logical dendrite non-linearity response of dendrite spike and saturation types. The proposed dendrite cells are used to build XOR circuit and intensity detection circuit that consists of different combinations of dendrite cells with saturating and spiking responses. The dendrite cells are designed using a set of memristors, Zener diodes, and CMOS NOT gates. The circuits are designed, analyzed and verified on circuit boards.

Original languageEnglish
Title of host publication2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages131-134
Number of pages4
ISBN (Electronic)9781509015702
DOIs
Publication statusPublished - Jan 3 2017
Event2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016 - Jeju, Korea, Republic of
Duration: Oct 25 2016Oct 28 2016

Conference

Conference2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016
CountryKorea, Republic of
CityJeju
Period10/25/1610/28/16

Fingerprint

Memristors
Networks (circuits)
Neurons
Zener diodes
Hardware

Keywords

  • Analog Circuits
  • Dendrite models
  • Gates
  • Image processing
  • Memristors
  • Neural Circuits

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Signal Processing

Cite this

Zhanbossinov, A., Smagulova, K., & James, A. P. (2017). CMOS-memristor dendrite threshold circuits. In 2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016 (pp. 131-134). [7803914] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APCCAS.2016.7803914

CMOS-memristor dendrite threshold circuits. / Zhanbossinov, Askhat; Smagulova, Kamilya; James, Alex Pappachen.

2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016. Institute of Electrical and Electronics Engineers Inc., 2017. p. 131-134 7803914.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Zhanbossinov, A, Smagulova, K & James, AP 2017, CMOS-memristor dendrite threshold circuits. in 2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016., 7803914, Institute of Electrical and Electronics Engineers Inc., pp. 131-134, 2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016, Jeju, Korea, Republic of, 10/25/16. https://doi.org/10.1109/APCCAS.2016.7803914
Zhanbossinov A, Smagulova K, James AP. CMOS-memristor dendrite threshold circuits. In 2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016. Institute of Electrical and Electronics Engineers Inc. 2017. p. 131-134. 7803914 https://doi.org/10.1109/APCCAS.2016.7803914
Zhanbossinov, Askhat ; Smagulova, Kamilya ; James, Alex Pappachen. / CMOS-memristor dendrite threshold circuits. 2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 131-134
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