CMOS-Memristor hybrid integrated pixel sensors

Kamilya Smagulova, Aigerim Tankimanova, Alex Pappachen James

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Increase in image resolution require the abilityof image sensors to pack an increased number of circuitcomponents in a given area. On the the other hand a high speedprocessing of signals from the sensors require the ability of pixelto carry out pixel parallel operations. In the paper, we proposea modified 3T and 4T CMOS wide dynamic range pixels, which we refer as 2T-M and 3T-M configurations, comprising ofMOSFETS and memristors. The low leakage currents and lowarea of memristors helps to achieve the objective of reducingthe area, while the possibility to create arrays of memristorsand MOSFETs across different layers within the chip, ensurethe possibility to scale the circuit architecture.

Original languageEnglish
Title of host publicationProceedings - 2016 IEEE International Symposium on Nanoelectronic and Information Systems, iNIS 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages34-37
Number of pages4
ISBN (Electronic)9781509061693
DOIs
Publication statusPublished - Jan 23 2017
Externally publishedYes
Event2nd IEEE International Symposium on Nanoelectronic and Information Systems, iNIS 2016 - Gwalior, Madhya Pradesh, India
Duration: Dec 19 2016Dec 21 2016

Conference

Conference2nd IEEE International Symposium on Nanoelectronic and Information Systems, iNIS 2016
CountryIndia
CityGwalior, Madhya Pradesh
Period12/19/1612/21/16

Fingerprint

Memristors
Pixels
Sensors
Image resolution
Image sensors
Leakage currents
Networks (circuits)

Keywords

  • Analog Circuits
  • CMOS
  • Memristors
  • Pixels

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Computer Networks and Communications
  • Hardware and Architecture
  • Information Systems

Cite this

Smagulova, K., Tankimanova, A., & James, A. P. (2017). CMOS-Memristor hybrid integrated pixel sensors. In Proceedings - 2016 IEEE International Symposium on Nanoelectronic and Information Systems, iNIS 2016 (pp. 34-37). [7829517] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/iNIS.2016.019

CMOS-Memristor hybrid integrated pixel sensors. / Smagulova, Kamilya; Tankimanova, Aigerim; James, Alex Pappachen.

Proceedings - 2016 IEEE International Symposium on Nanoelectronic and Information Systems, iNIS 2016. Institute of Electrical and Electronics Engineers Inc., 2017. p. 34-37 7829517.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Smagulova, K, Tankimanova, A & James, AP 2017, CMOS-Memristor hybrid integrated pixel sensors. in Proceedings - 2016 IEEE International Symposium on Nanoelectronic and Information Systems, iNIS 2016., 7829517, Institute of Electrical and Electronics Engineers Inc., pp. 34-37, 2nd IEEE International Symposium on Nanoelectronic and Information Systems, iNIS 2016, Gwalior, Madhya Pradesh, India, 12/19/16. https://doi.org/10.1109/iNIS.2016.019
Smagulova K, Tankimanova A, James AP. CMOS-Memristor hybrid integrated pixel sensors. In Proceedings - 2016 IEEE International Symposium on Nanoelectronic and Information Systems, iNIS 2016. Institute of Electrical and Electronics Engineers Inc. 2017. p. 34-37. 7829517 https://doi.org/10.1109/iNIS.2016.019
Smagulova, Kamilya ; Tankimanova, Aigerim ; James, Alex Pappachen. / CMOS-Memristor hybrid integrated pixel sensors. Proceedings - 2016 IEEE International Symposium on Nanoelectronic and Information Systems, iNIS 2016. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 34-37
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