Comment on “A 1 /fNoise Technique to Extract the Oxide Trap Density Near the Conduction Band Edge of Silicon”

Charles Surya

Research output: Contribution to journalComment/debatepeer-review

Abstract

We comment on a recent paper by R. Jayaraman and C. Sodini1 on the evaluation of the total low-frequency noise power spectra in n-channel MOSFET’s. It is shown that, contrary to the calculations of these authors, the correlated noise power spectra of number and surface mobility fluctuations in n-channel MOSFET’s are functions of the relative densities of the positive and neutral traps at the Si-Si02 interface.

Original languageEnglish
Pages (from-to)680-681
Number of pages2
JournalIEEE Transactions on Electron Devices
Volume40
Issue number3
DOIs
Publication statusPublished - Jan 1 1993
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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