We comment on a recent paper by R. Jayaraman and C. Sodini1 on the evaluation of the total low-frequency noise power spectra in n-channel MOSFET’s. It is shown that, contrary to the calculations of these authors, the correlated noise power spectra of number and surface mobility fluctuations in n-channel MOSFET’s are functions of the relative densities of the positive and neutral traps at the Si-Si02 interface.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering