An experimental comparative study of PIN/HEMT and MSM/HEMT monolithically integrated photoreceivers for high-speed long-wavelength telecommunications systems is presented. The monolithic integration of the photodetector (either MSM or PIN) with the HEMT used a stacked layer structure design grown by OMVPE. Detector areas and amplifier feedback resistances were selected to result in similar bandwidths and responsivities for both the MSM-and PIN-based photoreceivers. Sensitivities for the MSM/HEMT photoreceivers were measured to be -16.9 dBm and -10.7 dBm at 5 Gb/s and 10 Gb/s, respectively for a bit-error ratio (BER) of 10-9 and 27-1 pattern length PRBS data. Corresponding performance for the PIN/HEMT photoreceivers was -18.4 and -15.8 dBm. To the author's knowledge, this is the first direct experimental comparison of MSM- and PIN-based technologies for high-speed monolithic photoreceiver applications.
|Number of pages||3|
|Journal||IEEE Photonics Technology Letters|
|Publication status||Published - Apr 1 1998|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering