Comparative study of self-aligned and nonself-aligned SiGe p-metal-oxide-semiconductor modulation-doped field effect transistors with nanometer gate lengths

Wu Lu, Steven J. Koester, Xie Wen Wang, Jack O. Chu, Tso Ping Ma, Ilesanmi Adesida

Research output: Contribution to journalConference article

5 Citations (Scopus)


Self and nonself aligned SiGe p-metal-oxide-semiconductor modulation-doped field effect transistors fabrication processes were compared. The self aligned devices were found exhibiting higher extrinsic transconductances, lower threshold voltages, higher unity current gain cutoff frequencies, and maximum oscillation frequencies compared to nonself-aligned devices.

Original languageEnglish
Pages (from-to)3488-3492
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number6
Publication statusPublished - Nov 1 2000
Event44th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication - Rancho Mirage, CA, USA
Duration: May 30 2000Jun 2 2000


ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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