Comparative study of self-aligned and nonself-aligned SiGe p-metal-oxide-semiconductor modulation-doped field effect transistors with nanometer gate lengths

Wu Lu, Steven J. Koester, Xie Wen Wang, Jack O. Chu, Tso Ping Ma, Ilesanmi Adesida

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Self and nonself aligned SiGe p-metal-oxide-semiconductor modulation-doped field effect transistors fabrication processes were compared. The self aligned devices were found exhibiting higher extrinsic transconductances, lower threshold voltages, higher unity current gain cutoff frequencies, and maximum oscillation frequencies compared to nonself-aligned devices.

Original languageEnglish
Pages (from-to)3488-3492
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume18
Issue number6
DOIs
Publication statusPublished - Nov 2000
Externally publishedYes

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Cutoff frequency
Transconductance
High electron mobility transistors
Threshold voltage
Fabrication
Metals
Oxide semiconductors

ASJC Scopus subject areas

  • Engineering(all)

Cite this

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abstract = "Self and nonself aligned SiGe p-metal-oxide-semiconductor modulation-doped field effect transistors fabrication processes were compared. The self aligned devices were found exhibiting higher extrinsic transconductances, lower threshold voltages, higher unity current gain cutoff frequencies, and maximum oscillation frequencies compared to nonself-aligned devices.",
author = "Wu Lu and Koester, {Steven J.} and Wang, {Xie Wen} and Chu, {Jack O.} and Ma, {Tso Ping} and Ilesanmi Adesida",
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AU - Wang, Xie Wen

AU - Chu, Jack O.

AU - Ma, Tso Ping

AU - Adesida, Ilesanmi

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AB - Self and nonself aligned SiGe p-metal-oxide-semiconductor modulation-doped field effect transistors fabrication processes were compared. The self aligned devices were found exhibiting higher extrinsic transconductances, lower threshold voltages, higher unity current gain cutoff frequencies, and maximum oscillation frequencies compared to nonself-aligned devices.

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