Comparative study of self-aligned and nonself-aligned SiGe p-metal-oxide-semiconductor modulation-doped field effect transistors with nanometer gate lengths

Wu Lu; Steven J. Koester; Xie Wen Wang; Jack O. Chu; Tso Ping Ma; Ilesanmi Adesida

doi:10.1116/1.1321286

Comparative study of self-aligned and nonself-aligned SiGe p-metal-oxide-semiconductor modulation-doped field effect transistors with nanometer gate lengths

Wu Lu, Steven J. Koester, Xie Wen Wang, Jack O. Chu, Tso Ping Ma, Ilesanmi Adesida

Research output: Contribution to journal › Conference article › peer-review

5 Citations (Scopus)

Abstract

Self and nonself aligned SiGe p-metal-oxide-semiconductor modulation-doped field effect transistors fabrication processes were compared. The self aligned devices were found exhibiting higher extrinsic transconductances, lower threshold voltages, higher unity current gain cutoff frequencies, and maximum oscillation frequencies compared to nonself-aligned devices.

Original language	English
Pages (from-to)	3488-3492
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	18
Issue number	6
DOIs	https://doi.org/10.1116/1.1321286
Publication status	Published - Nov 2000
Externally published	Yes
Event	44th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication - Rancho Mirage, CA, USA Duration: May 30 2000 → Jun 2 2000

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.1321286

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Lu, W., Koester, S. J., Wang, X. W., Chu, J. O., Ma, T. P., & Adesida, I. (2000). Comparative study of self-aligned and nonself-aligned SiGe p-metal-oxide-semiconductor modulation-doped field effect transistors with nanometer gate lengths. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 18(6), 3488-3492. https://doi.org/10.1116/1.1321286

Comparative study of self-aligned and nonself-aligned SiGe p-metal-oxide-semiconductor modulation-doped field effect transistors with nanometer gate lengths. / Lu, Wu; Koester, Steven J.; Wang, Xie Wen et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 18, No. 6, 11.2000, p. 3488-3492.

Research output: Contribution to journal › Conference article › peer-review

Lu, W, Koester, SJ, Wang, XW, Chu, JO, Ma, TP & Adesida, I 2000, 'Comparative study of self-aligned and nonself-aligned SiGe p-metal-oxide-semiconductor modulation-doped field effect transistors with nanometer gate lengths', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 18, no. 6, pp. 3488-3492. https://doi.org/10.1116/1.1321286

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abstract = "Self and nonself aligned SiGe p-metal-oxide-semiconductor modulation-doped field effect transistors fabrication processes were compared. The self aligned devices were found exhibiting higher extrinsic transconductances, lower threshold voltages, higher unity current gain cutoff frequencies, and maximum oscillation frequencies compared to nonself-aligned devices.",

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Comparative study of self-aligned and nonself-aligned SiGe p-metal-oxide-semiconductor modulation-doped field effect transistors with nanometer gate lengths

Abstract

ASJC Scopus subject areas

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