Comparative study of Ti/Al/Mo/Au, Mo/Al/Mo/Au, and V/Al/Mo/Au ohmic contacts to AlGaN/GaN heterostructures

Deepak Selvanathan, Fitih M. Mohammed, Asrat Tesfayesus, Ilesanmi Adesida

Research output: Contribution to journalArticle

90 Citations (Scopus)

Abstract

The Ti/Al/Mo/Au, Mo/Al/Mo/Au and V/Al/Mo/Au metallization methods were used to form ohmic contacts to AlGaN/GaN high electron mobility transistors (HEMT). Mo/Al/Mo/Au ohmic contacts were found to exhibit the lowest contact resistance of 0.22±0.02 ω mm over a range of anneal temperatures from 650 to 800 °C. Auger electron microscopy and x-ray diffraction measurements were used to investigate the intermetallic reactions. Ti/Al/Mo/Au metallization scheme exhibits the best thermal stability of the three metallization schemes.

Original languageEnglish
Pages (from-to)2409-2416
Number of pages8
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume22
Issue number5
DOIs
Publication statusPublished - Sep 2004
Externally publishedYes

Fingerprint

Ohmic contacts
Metallizing
Heterojunctions
electric contacts
contact resistance
high electron mobility transistors
intermetallics
electron microscopy
x ray diffraction
thermal stability
High electron mobility transistors
Contact resistance
Electron microscopy
Intermetallics
Thermodynamic stability
Diffraction
X rays
temperature
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Comparative study of Ti/Al/Mo/Au, Mo/Al/Mo/Au, and V/Al/Mo/Au ohmic contacts to AlGaN/GaN heterostructures. / Selvanathan, Deepak; Mohammed, Fitih M.; Tesfayesus, Asrat; Adesida, Ilesanmi.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 22, No. 5, 09.2004, p. 2409-2416.

Research output: Contribution to journalArticle

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