@inproceedings{ffdfa19b759e457cb6d4a5d8c5b0a164,
title = "Computer modeling and electron microscopy of silicon surfaces irradiated by cluster ion impacts",
abstract = "Multiscale simulation method (MSM) has been used for modeling impacts of Ar clusters, with energies ranging from 20-500eV/atom, impacting Si surfaces. Our simulation predicts that on a Si (100), craters are nearly triangular in cross-section, with the facets directed along the close-packed (111) planes. The Si (100) craters exhibit four-fold symmetry. The craters on Si (111) surface are well rounded in cross-section and the top-view shows a complicated star-like image. The simulation results for Individual gas cluster impacts were compared with experiments at low dose (1010 ions/cm2 charge fluence) for Ar cluster impacts into Si (100) and Si (111) substrate surfaces. Atomic force microscopy (AFM) and cross-sectional high-resolution transmission electron microscope (TEM) imaging of individual gas cluster ion impacts into Si (100) and Si (111) substrate surfaces revealed faceting properties of the craters and are in agreement with the theoretical prediction.",
keywords = "AFM, HRTEM, cluster, crater, ion, modeling, silicon",
author = "Z. Insepov and N. Toyoda and I. Yamada and Allen, {L. P.} and Santeufemio, {C. L.} and Jones, {K. S.}",
note = "Funding Information: The authors gratefully acknowledge valuable discussions with John Hautala, Tom Tetreault, Yan Shao, Mike Mack and Allen Kirkpatrick of Epion Corporation. This work was partially supported by the NEDO project (Japan). The integral support of the USAF under contract #F33615–00–C–5404 is sincerely acknowledged. GCIB equipment and process work under DoC-NIST ATP award contract #70NANB8H4011 is also appreciated. Publisher Copyright: {\textcopyright} 2002 IEEE.; 2002 14th IEEE International Conference on Ion Implantation Technology, IIT 2002 ; Conference date: 22-09-2002 Through 27-09-2002",
year = "2002",
doi = "10.1109/IIT.2002.1258069",
language = "English",
series = "Proceedings of the International Conference on Ion Implantation Technology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "571--574",
editor = "Bob Brown and Alford, {Terry L.} and Mike Nastasi and Vella, {Michael C.}",
booktitle = "2002 14th International Conference on Ion Implantation Technology, IIT 2002 - Proceedings",
address = "United States",
}