Abstract
Multiscale simulation method (MSM) has been used for modeling impacts of Ar clusters, with energies ranging from 20-500eV/atom, impacting Si surfaces. Our simulation predicts that on a Si (100), craters are nearly triangular in cross-section, with the facets directed along the close-packed (111) planes. The Si (100) craters exhibit four-fold symmetry. The craters on Si (111) surface are well rounded in cross-section and the top-view shows a complicated star-like image. The simulation results for Individual gas cluster impacts were compared with experiments at low dose (1010 ions/cm2 charge fluence) for Ar cluster impacts into Si (100) and Si (111) substrate surfaces. Atomic force microscopy (AFM) and cross-sectional high-resolution transmission electron microscope (TEM) imaging of individual gas cluster ion impacts into Si (100) and Si (111) substrate surfaces revealed faceting properties of the craters and are in agreement with the theoretical prediction.
| Original language | English |
|---|---|
| Title of host publication | 2002 14th International Conference on Ion Implantation Technology, IIT 2002 - Proceedings |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 571-574 |
| Number of pages | 4 |
| Volume | 22-27-September-2002 |
| ISBN (Electronic) | 0780371550 |
| DOIs | |
| Publication status | Published - 2002 |
| Externally published | Yes |
| Event | 2002 14th IEEE International Conference on Ion Implantation Technology, IIT 2002 - Taos, United States Duration: Sep 22 2002 → Sep 27 2002 |
Other
| Other | 2002 14th IEEE International Conference on Ion Implantation Technology, IIT 2002 |
|---|---|
| Country | United States |
| City | Taos |
| Period | 9/22/02 → 9/27/02 |
Fingerprint
Keywords
- AFM
- cluster
- crater
- HRTEM
- ion
- modeling
- silicon
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Computer modeling and electron microscopy of silicon surfaces irradiated by cluster ion impacts. / Insepov, Z.; Toyoda, N.; Yamada, I.; Allen, L. P.; Santeufemio, C. L.; Jones, K. S.
2002 14th International Conference on Ion Implantation Technology, IIT 2002 - Proceedings. Vol. 22-27-September-2002 Institute of Electrical and Electronics Engineers Inc., 2002. p. 571-574 1258069.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Computer modeling and electron microscopy of silicon surfaces irradiated by cluster ion impacts
AU - Insepov, Z.
AU - Toyoda, N.
AU - Yamada, I.
AU - Allen, L. P.
AU - Santeufemio, C. L.
AU - Jones, K. S.
PY - 2002
Y1 - 2002
N2 - Multiscale simulation method (MSM) has been used for modeling impacts of Ar clusters, with energies ranging from 20-500eV/atom, impacting Si surfaces. Our simulation predicts that on a Si (100), craters are nearly triangular in cross-section, with the facets directed along the close-packed (111) planes. The Si (100) craters exhibit four-fold symmetry. The craters on Si (111) surface are well rounded in cross-section and the top-view shows a complicated star-like image. The simulation results for Individual gas cluster impacts were compared with experiments at low dose (1010 ions/cm2 charge fluence) for Ar cluster impacts into Si (100) and Si (111) substrate surfaces. Atomic force microscopy (AFM) and cross-sectional high-resolution transmission electron microscope (TEM) imaging of individual gas cluster ion impacts into Si (100) and Si (111) substrate surfaces revealed faceting properties of the craters and are in agreement with the theoretical prediction.
AB - Multiscale simulation method (MSM) has been used for modeling impacts of Ar clusters, with energies ranging from 20-500eV/atom, impacting Si surfaces. Our simulation predicts that on a Si (100), craters are nearly triangular in cross-section, with the facets directed along the close-packed (111) planes. The Si (100) craters exhibit four-fold symmetry. The craters on Si (111) surface are well rounded in cross-section and the top-view shows a complicated star-like image. The simulation results for Individual gas cluster impacts were compared with experiments at low dose (1010 ions/cm2 charge fluence) for Ar cluster impacts into Si (100) and Si (111) substrate surfaces. Atomic force microscopy (AFM) and cross-sectional high-resolution transmission electron microscope (TEM) imaging of individual gas cluster ion impacts into Si (100) and Si (111) substrate surfaces revealed faceting properties of the craters and are in agreement with the theoretical prediction.
KW - AFM
KW - cluster
KW - crater
KW - HRTEM
KW - ion
KW - modeling
KW - silicon
UR - http://www.scopus.com/inward/record.url?scp=84961298915&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84961298915&partnerID=8YFLogxK
U2 - 10.1109/IIT.2002.1258069
DO - 10.1109/IIT.2002.1258069
M3 - Conference contribution
VL - 22-27-September-2002
SP - 571
EP - 574
BT - 2002 14th International Conference on Ion Implantation Technology, IIT 2002 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
ER -