Computer modeling and electron microscopy of silicon surfaces irradiated by cluster ion impacts

Z. Insepov; N. Toyoda; I. Yamada; L. P. Allen; C. L. Santeufemio; K. S. Jones

doi:10.1109/IIT.2002.1258069

Computer modeling and electron microscopy of silicon surfaces irradiated by cluster ion impacts

Z. Insepov, N. Toyoda, I. Yamada, L. P. Allen, C. L. Santeufemio, K. S. Jones

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Multiscale simulation method (MSM) has been used for modeling impacts of Ar clusters, with energies ranging from 20-500eV/atom, impacting Si surfaces. Our simulation predicts that on a Si (100), craters are nearly triangular in cross-section, with the facets directed along the close-packed (111) planes. The Si (100) craters exhibit four-fold symmetry. The craters on Si (111) surface are well rounded in cross-section and the top-view shows a complicated star-like image. The simulation results for Individual gas cluster impacts were compared with experiments at low dose (10¹⁰ ions/cm² charge fluence) for Ar cluster impacts into Si (100) and Si (111) substrate surfaces. Atomic force microscopy (AFM) and cross-sectional high-resolution transmission electron microscope (TEM) imaging of individual gas cluster ion impacts into Si (100) and Si (111) substrate surfaces revealed faceting properties of the craters and are in agreement with the theoretical prediction.

Original language	English
Title of host publication	2002 14th International Conference on Ion Implantation Technology, IIT 2002 - Proceedings
Editors	Bob Brown, Terry L. Alford, Mike Nastasi, Michael C. Vella
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	571-574
Number of pages	4
ISBN (Electronic)	0780371550
DOIs	https://doi.org/10.1109/IIT.2002.1258069
Publication status	Published - 2002
Externally published	Yes
Event	2002 14th IEEE International Conference on Ion Implantation Technology, IIT 2002 - Taos, United States Duration: Sep 22 2002 → Sep 27 2002

Publication series

Name	Proceedings of the International Conference on Ion Implantation Technology
Volume	22-27-September-2002

Other

Other	2002 14th IEEE International Conference on Ion Implantation Technology, IIT 2002
Country	United States
City	Taos
Period	9/22/02 → 9/27/02

Keywords

AFM
HRTEM
cluster
crater
ion
modeling
silicon

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1109/IIT.2002.1258069

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Cite this

Insepov, Z., Toyoda, N., Yamada, I., Allen, L. P., Santeufemio, C. L., & Jones, K. S. (2002). Computer modeling and electron microscopy of silicon surfaces irradiated by cluster ion impacts. In B. Brown, T. L. Alford, M. Nastasi, & M. C. Vella (Eds.), 2002 14th International Conference on Ion Implantation Technology, IIT 2002 - Proceedings (pp. 571-574). [1258069] (Proceedings of the International Conference on Ion Implantation Technology; Vol. 22-27-September-2002). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IIT.2002.1258069

Computer modeling and electron microscopy of silicon surfaces irradiated by cluster ion impacts. / Insepov, Z.; Toyoda, N.; Yamada, I.; Allen, L. P.; Santeufemio, C. L.; Jones, K. S.

2002 14th International Conference on Ion Implantation Technology, IIT 2002 - Proceedings. ed. / Bob Brown; Terry L. Alford; Mike Nastasi; Michael C. Vella. Institute of Electrical and Electronics Engineers Inc., 2002. p. 571-574 1258069 (Proceedings of the International Conference on Ion Implantation Technology; Vol. 22-27-September-2002).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Insepov, Z, Toyoda, N, Yamada, I, Allen, LP, Santeufemio, CL & Jones, KS 2002, Computer modeling and electron microscopy of silicon surfaces irradiated by cluster ion impacts. in B Brown, TL Alford, M Nastasi & MC Vella (eds), 2002 14th International Conference on Ion Implantation Technology, IIT 2002 - Proceedings., 1258069, Proceedings of the International Conference on Ion Implantation Technology, vol. 22-27-September-2002, Institute of Electrical and Electronics Engineers Inc., pp. 571-574, 2002 14th IEEE International Conference on Ion Implantation Technology, IIT 2002, Taos, United States, 9/22/02. https://doi.org/10.1109/IIT.2002.1258069

Insepov Z, Toyoda N, Yamada I, Allen LP, Santeufemio CL, Jones KS. Computer modeling and electron microscopy of silicon surfaces irradiated by cluster ion impacts. In Brown B, Alford TL, Nastasi M, Vella MC, editors, 2002 14th International Conference on Ion Implantation Technology, IIT 2002 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2002. p. 571-574. 1258069. (Proceedings of the International Conference on Ion Implantation Technology). https://doi.org/10.1109/IIT.2002.1258069

Insepov, Z. ; Toyoda, N. ; Yamada, I. ; Allen, L. P. ; Santeufemio, C. L. ; Jones, K. S. / Computer modeling and electron microscopy of silicon surfaces irradiated by cluster ion impacts. 2002 14th International Conference on Ion Implantation Technology, IIT 2002 - Proceedings. editor / Bob Brown ; Terry L. Alford ; Mike Nastasi ; Michael C. Vella. Institute of Electrical and Electronics Engineers Inc., 2002. pp. 571-574 (Proceedings of the International Conference on Ion Implantation Technology).

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abstract = "Multiscale simulation method (MSM) has been used for modeling impacts of Ar clusters, with energies ranging from 20-500eV/atom, impacting Si surfaces. Our simulation predicts that on a Si (100), craters are nearly triangular in cross-section, with the facets directed along the close-packed (111) planes. The Si (100) craters exhibit four-fold symmetry. The craters on Si (111) surface are well rounded in cross-section and the top-view shows a complicated star-like image. The simulation results for Individual gas cluster impacts were compared with experiments at low dose (1010 ions/cm2 charge fluence) for Ar cluster impacts into Si (100) and Si (111) substrate surfaces. Atomic force microscopy (AFM) and cross-sectional high-resolution transmission electron microscope (TEM) imaging of individual gas cluster ion impacts into Si (100) and Si (111) substrate surfaces revealed faceting properties of the craters and are in agreement with the theoretical prediction.",

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author = "Z. Insepov and N. Toyoda and I. Yamada and Allen, {L. P.} and Santeufemio, {C. L.} and Jones, {K. S.}",

note = "Funding Information: The authors gratefully acknowledge valuable discussions with John Hautala, Tom Tetreault, Yan Shao, Mike Mack and Allen Kirkpatrick of Epion Corporation. This work was partially supported by the NEDO project (Japan). The integral support of the USAF under contract #F33615–00–C–5404 is sincerely acknowledged. GCIB equipment and process work under DoC-NIST ATP award contract #70NANB8H4011 is also appreciated. ; 2002 14th IEEE International Conference on Ion Implantation Technology, IIT 2002 ; Conference date: 22-09-2002 Through 27-09-2002",

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N2 - Multiscale simulation method (MSM) has been used for modeling impacts of Ar clusters, with energies ranging from 20-500eV/atom, impacting Si surfaces. Our simulation predicts that on a Si (100), craters are nearly triangular in cross-section, with the facets directed along the close-packed (111) planes. The Si (100) craters exhibit four-fold symmetry. The craters on Si (111) surface are well rounded in cross-section and the top-view shows a complicated star-like image. The simulation results for Individual gas cluster impacts were compared with experiments at low dose (1010 ions/cm2 charge fluence) for Ar cluster impacts into Si (100) and Si (111) substrate surfaces. Atomic force microscopy (AFM) and cross-sectional high-resolution transmission electron microscope (TEM) imaging of individual gas cluster ion impacts into Si (100) and Si (111) substrate surfaces revealed faceting properties of the craters and are in agreement with the theoretical prediction.

AB - Multiscale simulation method (MSM) has been used for modeling impacts of Ar clusters, with energies ranging from 20-500eV/atom, impacting Si surfaces. Our simulation predicts that on a Si (100), craters are nearly triangular in cross-section, with the facets directed along the close-packed (111) planes. The Si (100) craters exhibit four-fold symmetry. The craters on Si (111) surface are well rounded in cross-section and the top-view shows a complicated star-like image. The simulation results for Individual gas cluster impacts were compared with experiments at low dose (1010 ions/cm2 charge fluence) for Ar cluster impacts into Si (100) and Si (111) substrate surfaces. Atomic force microscopy (AFM) and cross-sectional high-resolution transmission electron microscope (TEM) imaging of individual gas cluster ion impacts into Si (100) and Si (111) substrate surfaces revealed faceting properties of the craters and are in agreement with the theoretical prediction.

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