Computer modeling and electron microscopy of silicon surfaces irradiated by cluster ion impacts

Z. Insepov, N. Toyoda, I. Yamada, L. P. Allen, C. L. Santeufemio, K. S. Jones

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Multiscale simulation method (MSM) has been used for modeling impacts of Ar clusters, with energies ranging from 20-500eV/atom, impacting Si surfaces. Our simulation predicts that on a Si (100), craters are nearly triangular in cross-section, with the facets directed along the close-packed (111) planes. The Si (100) craters exhibit four-fold symmetry. The craters on Si (111) surface are well rounded in cross-section and the top-view shows a complicated star-like image. The simulation results for Individual gas cluster impacts were compared with experiments at low dose (1010 ions/cm2 charge fluence) for Ar cluster impacts into Si (100) and Si (111) substrate surfaces. Atomic force microscopy (AFM) and cross-sectional high-resolution transmission electron microscope (TEM) imaging of individual gas cluster ion impacts into Si (100) and Si (111) substrate surfaces revealed faceting properties of the craters and are in agreement with the theoretical prediction.

Original languageEnglish
Title of host publication2002 14th International Conference on Ion Implantation Technology, IIT 2002 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages571-574
Number of pages4
Volume22-27-September-2002
ISBN (Electronic)0780371550
DOIs
Publication statusPublished - 2002
Externally publishedYes
Event2002 14th IEEE International Conference on Ion Implantation Technology, IIT 2002 - Taos, United States
Duration: Sep 22 2002Sep 27 2002

Other

Other2002 14th IEEE International Conference on Ion Implantation Technology, IIT 2002
CountryUnited States
CityTaos
Period9/22/029/27/02

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Keywords

  • AFM
  • cluster
  • crater
  • HRTEM
  • ion
  • modeling
  • silicon

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Insepov, Z., Toyoda, N., Yamada, I., Allen, L. P., Santeufemio, C. L., & Jones, K. S. (2002). Computer modeling and electron microscopy of silicon surfaces irradiated by cluster ion impacts. In 2002 14th International Conference on Ion Implantation Technology, IIT 2002 - Proceedings (Vol. 22-27-September-2002, pp. 571-574). [1258069] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IIT.2002.1258069