Abstract
Molecular Dynamics (MD) and Metropolis Monte-Carlo (MMC) models of monomer B and decaborane implantation into Si and following rapid thermal annealing (RTA) processes have been developed in this paper. The implanted B dopant diffusion coefficients were obtained for different substrate temperatures. The simulation of decaborane ion implantation has revealed the formation of an amorphized area in a subsurface region, much larger than that of a single B+ implantation, with the same energy per ion. The B diffusion coefficient shows an unusual temperature dependence with two different activation energies. Low activation energy, less than 0.2, was obtained for a low-temperature region, and a higher activation energy, approximately 3 ev, for a higher-temperature region which is typical for the RTA processing. The higher activation energy is comparable with the equilibrium activation energy, 3.4 ev, for B diffusion in Si.
Original language | English |
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Pages (from-to) | 147-152 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 532 |
DOIs | |
Publication status | Published - 1998 |
Externally published | Yes |
Event | Proceedings of the 1998 MRS Spring Meeting - San Francisco, CA, USA Duration: Apr 13 1998 → Apr 15 1998 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering