Computer simulation of annealing after cluster ion implantation

Z. Insepov, T. Aoki, J. Matsuo, I. Yamada

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Molecular Dynamics (MD) and Metropolis Monte-Carlo (MMC) models of monomer B and decaborane implantation into Si and following rapid thermal annealing (RTA) processes have been developed in this paper. The implanted B dopant diffusion coefficients were obtained for different substrate temperatures. The simulation of decaborane ion implantation has revealed the formation of an amorphized area in a subsurface region, much larger than that of a single B+ implantation, with the same energy per ion. The B diffusion coefficient shows an unusual temperature dependence with two different activation energies. Low activation energy, less than 0.2, was obtained for a low-temperature region, and a higher activation energy, approximately 3 ev, for a higher-temperature region which is typical for the RTA processing. The higher activation energy is comparable with the equilibrium activation energy, 3.4 ev, for B diffusion in Si.

Original languageEnglish
Pages (from-to)147-152
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume532
Publication statusPublished - 1998
Externally publishedYes

Fingerprint

Ion implantation
ion implantation
Activation energy
computerized simulation
Annealing
activation energy
annealing
Computer simulation
Rapid thermal annealing
implantation
diffusion coefficient
Temperature
Molecular dynamics
monomers
Monomers
Doping (additives)
Ions
molecular dynamics
temperature dependence
Substrates

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Computer simulation of annealing after cluster ion implantation. / Insepov, Z.; Aoki, T.; Matsuo, J.; Yamada, I.

In: Materials Research Society Symposium - Proceedings, Vol. 532, 1998, p. 147-152.

Research output: Contribution to journalArticle

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