Computer simulation of annealing after cluster ion implantation

Z. Insepov, T. Aoki, J. Matsuo, I. Yamada

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

Molecular Dynamics (MD) and Metropolis Monte-Carlo (MMC) models of monomer B and decaborane implantation into Si and following rapid thermal annealing (RTA) processes have been developed in this paper. The implanted B dopant diffusion coefficients were obtained for different substrate temperatures. The simulation of decaborane ion implantation has revealed the formation of an amorphized area in a subsurface region, much larger than that of a single B+ implantation, with the same energy per ion. The B diffusion coefficient shows an unusual temperature dependence with two different activation energies. Low activation energy, less than 0.2, was obtained for a low-temperature region, and a higher activation energy, approximately 3 ev, for a higher-temperature region which is typical for the RTA processing. The higher activation energy is comparable with the equilibrium activation energy, 3.4 ev, for B diffusion in Si.

Original languageEnglish
Pages (from-to)147-152
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume532
DOIs
Publication statusPublished - 1998
Externally publishedYes
EventProceedings of the 1998 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 13 1998Apr 15 1998

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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