Abstract
Molecular Dynamics (MD) and Metropolis Monte-Carlo (MMC) models of monomer B and decaborane implantation into Si and following rapid thermal annealing (RTA) processes have been developed. The implanted B dopant and Si-atomic diffusion coefficients were obtained for different substrate temperatures. The simulation of decaborane ion implantation has revealed the formation of an amorphized area in a subsurface region, much larger than that of a single B+ implantation, with the same energy per ion. The calculated B diffusion coefficient has values between 10-12-10-10 cm2 s-1 which agrees well with experimental values obtained for an equilibrium B dopant in Si. Our calculations have shown an unusual temperature dependence with two different activation energies. Low activation energy, less than 0.2 eV, was obtained for a low-temperature region, and a higher activation energy, approximately 3 eV, for a higher-temperature region which is typical for the RTA processing. The higher activation energy is comparable with the equilibrium activation energy, 3.4 eV, for B diffusion in Si. The diffusivity for Si atoms was obtained to be in the interval 10-14-10-12 cm2 s-1. In our present simulation for decaborane cluster implantation into Si, we have not observed the TED phenomenon.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the International Conference on Ion Implantation Technology |
| Publisher | IEEE |
| Pages | 807-810 |
| Number of pages | 4 |
| Volume | 2 |
| ISBN (Print) | 078034538X |
| Publication status | Published - 1999 |
| Externally published | Yes |
| Event | Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98) - Kyoto, Jpn Duration: Jun 22 1998 → Jun 26 1998 |
Other
| Other | Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98) |
|---|---|
| City | Kyoto, Jpn |
| Period | 6/22/98 → 6/26/98 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Computer simulation of decaborane implantation and rapid thermal annealing. / Insepov, Zinetulla; Aoki, Takaaki; Matsuo, Jiro; Yamada, Isao.
Proceedings of the International Conference on Ion Implantation Technology. Vol. 2 IEEE, 1999. p. 807-810.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Computer simulation of decaborane implantation and rapid thermal annealing
AU - Insepov, Zinetulla
AU - Aoki, Takaaki
AU - Matsuo, Jiro
AU - Yamada, Isao
PY - 1999
Y1 - 1999
N2 - Molecular Dynamics (MD) and Metropolis Monte-Carlo (MMC) models of monomer B and decaborane implantation into Si and following rapid thermal annealing (RTA) processes have been developed. The implanted B dopant and Si-atomic diffusion coefficients were obtained for different substrate temperatures. The simulation of decaborane ion implantation has revealed the formation of an amorphized area in a subsurface region, much larger than that of a single B+ implantation, with the same energy per ion. The calculated B diffusion coefficient has values between 10-12-10-10 cm2 s-1 which agrees well with experimental values obtained for an equilibrium B dopant in Si. Our calculations have shown an unusual temperature dependence with two different activation energies. Low activation energy, less than 0.2 eV, was obtained for a low-temperature region, and a higher activation energy, approximately 3 eV, for a higher-temperature region which is typical for the RTA processing. The higher activation energy is comparable with the equilibrium activation energy, 3.4 eV, for B diffusion in Si. The diffusivity for Si atoms was obtained to be in the interval 10-14-10-12 cm2 s-1. In our present simulation for decaborane cluster implantation into Si, we have not observed the TED phenomenon.
AB - Molecular Dynamics (MD) and Metropolis Monte-Carlo (MMC) models of monomer B and decaborane implantation into Si and following rapid thermal annealing (RTA) processes have been developed. The implanted B dopant and Si-atomic diffusion coefficients were obtained for different substrate temperatures. The simulation of decaborane ion implantation has revealed the formation of an amorphized area in a subsurface region, much larger than that of a single B+ implantation, with the same energy per ion. The calculated B diffusion coefficient has values between 10-12-10-10 cm2 s-1 which agrees well with experimental values obtained for an equilibrium B dopant in Si. Our calculations have shown an unusual temperature dependence with two different activation energies. Low activation energy, less than 0.2 eV, was obtained for a low-temperature region, and a higher activation energy, approximately 3 eV, for a higher-temperature region which is typical for the RTA processing. The higher activation energy is comparable with the equilibrium activation energy, 3.4 eV, for B diffusion in Si. The diffusivity for Si atoms was obtained to be in the interval 10-14-10-12 cm2 s-1. In our present simulation for decaborane cluster implantation into Si, we have not observed the TED phenomenon.
UR - http://www.scopus.com/inward/record.url?scp=0033322699&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033322699&partnerID=8YFLogxK
M3 - Conference contribution
SN - 078034538X
VL - 2
SP - 807
EP - 810
BT - Proceedings of the International Conference on Ion Implantation Technology
PB - IEEE
ER -