Computer simulation of decaborane implantation and rapid thermal annealing

Zinetulla Insepov, Takaaki Aoki, Jiro Matsuo, Isao Yamada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Molecular Dynamics (MD) and Metropolis Monte-Carlo (MMC) models of monomer B and decaborane implantation into Si and following rapid thermal annealing (RTA) processes have been developed. The implanted B dopant and Si-atomic diffusion coefficients were obtained for different substrate temperatures. The simulation of decaborane ion implantation has revealed the formation of an amorphized area in a subsurface region, much larger than that of a single B+ implantation, with the same energy per ion. The calculated B diffusion coefficient has values between 10-12-10-10 cm2 s-1 which agrees well with experimental values obtained for an equilibrium B dopant in Si. Our calculations have shown an unusual temperature dependence with two different activation energies. Low activation energy, less than 0.2 eV, was obtained for a low-temperature region, and a higher activation energy, approximately 3 eV, for a higher-temperature region which is typical for the RTA processing. The higher activation energy is comparable with the equilibrium activation energy, 3.4 eV, for B diffusion in Si. The diffusivity for Si atoms was obtained to be in the interval 10-14-10-12 cm2 s-1. In our present simulation for decaborane cluster implantation into Si, we have not observed the TED phenomenon.

Original languageEnglish
Title of host publicationProceedings of the International Conference on Ion Implantation Technology
PublisherIEEE
Pages807-810
Number of pages4
ISBN (Print)078034538X
Publication statusPublished - Dec 1 1999
EventProceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98) - Kyoto, Jpn
Duration: Jun 22 1998Jun 26 1998

Publication series

NameProceedings of the International Conference on Ion Implantation Technology
Volume2

Other

OtherProceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98)
CityKyoto, Jpn
Period6/22/986/26/98

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Insepov, Z., Aoki, T., Matsuo, J., & Yamada, I. (1999). Computer simulation of decaborane implantation and rapid thermal annealing. In Proceedings of the International Conference on Ion Implantation Technology (pp. 807-810). (Proceedings of the International Conference on Ion Implantation Technology; Vol. 2). IEEE.