Computer simulation of decaborane implantation and rapid thermal annealing

Zinetulla Insepov, Takaaki Aoki, Jiro Matsuo, Isao Yamada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Molecular Dynamics (MD) and Metropolis Monte-Carlo (MMC) models of monomer B and decaborane implantation into Si and following rapid thermal annealing (RTA) processes have been developed. The implanted B dopant and Si-atomic diffusion coefficients were obtained for different substrate temperatures. The simulation of decaborane ion implantation has revealed the formation of an amorphized area in a subsurface region, much larger than that of a single B+ implantation, with the same energy per ion. The calculated B diffusion coefficient has values between 10-12-10-10 cm2 s-1 which agrees well with experimental values obtained for an equilibrium B dopant in Si. Our calculations have shown an unusual temperature dependence with two different activation energies. Low activation energy, less than 0.2 eV, was obtained for a low-temperature region, and a higher activation energy, approximately 3 eV, for a higher-temperature region which is typical for the RTA processing. The higher activation energy is comparable with the equilibrium activation energy, 3.4 eV, for B diffusion in Si. The diffusivity for Si atoms was obtained to be in the interval 10-14-10-12 cm2 s-1. In our present simulation for decaborane cluster implantation into Si, we have not observed the TED phenomenon.

Original languageEnglish
Title of host publicationProceedings of the International Conference on Ion Implantation Technology
PublisherIEEE
Pages807-810
Number of pages4
Volume2
ISBN (Print)078034538X
Publication statusPublished - 1999
Externally publishedYes
EventProceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98) - Kyoto, Jpn
Duration: Jun 22 1998Jun 26 1998

Other

OtherProceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98)
CityKyoto, Jpn
Period6/22/986/26/98

Fingerprint

Rapid thermal annealing
Activation energy
Computer simulation
Ion implantation
Doping (additives)
Temperature
Molecular dynamics
Monomers
Atoms
Ions
Substrates
Processing

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Insepov, Z., Aoki, T., Matsuo, J., & Yamada, I. (1999). Computer simulation of decaborane implantation and rapid thermal annealing. In Proceedings of the International Conference on Ion Implantation Technology (Vol. 2, pp. 807-810). IEEE.

Computer simulation of decaborane implantation and rapid thermal annealing. / Insepov, Zinetulla; Aoki, Takaaki; Matsuo, Jiro; Yamada, Isao.

Proceedings of the International Conference on Ion Implantation Technology. Vol. 2 IEEE, 1999. p. 807-810.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Insepov, Z, Aoki, T, Matsuo, J & Yamada, I 1999, Computer simulation of decaborane implantation and rapid thermal annealing. in Proceedings of the International Conference on Ion Implantation Technology. vol. 2, IEEE, pp. 807-810, Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98), Kyoto, Jpn, 6/22/98.
Insepov Z, Aoki T, Matsuo J, Yamada I. Computer simulation of decaborane implantation and rapid thermal annealing. In Proceedings of the International Conference on Ion Implantation Technology. Vol. 2. IEEE. 1999. p. 807-810
Insepov, Zinetulla ; Aoki, Takaaki ; Matsuo, Jiro ; Yamada, Isao. / Computer simulation of decaborane implantation and rapid thermal annealing. Proceedings of the International Conference on Ion Implantation Technology. Vol. 2 IEEE, 1999. pp. 807-810
@inproceedings{9d0d0d9448584ceb8208aa9f31b6bd78,
title = "Computer simulation of decaborane implantation and rapid thermal annealing",
abstract = "Molecular Dynamics (MD) and Metropolis Monte-Carlo (MMC) models of monomer B and decaborane implantation into Si and following rapid thermal annealing (RTA) processes have been developed. The implanted B dopant and Si-atomic diffusion coefficients were obtained for different substrate temperatures. The simulation of decaborane ion implantation has revealed the formation of an amorphized area in a subsurface region, much larger than that of a single B+ implantation, with the same energy per ion. The calculated B diffusion coefficient has values between 10-12-10-10 cm2 s-1 which agrees well with experimental values obtained for an equilibrium B dopant in Si. Our calculations have shown an unusual temperature dependence with two different activation energies. Low activation energy, less than 0.2 eV, was obtained for a low-temperature region, and a higher activation energy, approximately 3 eV, for a higher-temperature region which is typical for the RTA processing. The higher activation energy is comparable with the equilibrium activation energy, 3.4 eV, for B diffusion in Si. The diffusivity for Si atoms was obtained to be in the interval 10-14-10-12 cm2 s-1. In our present simulation for decaborane cluster implantation into Si, we have not observed the TED phenomenon.",
author = "Zinetulla Insepov and Takaaki Aoki and Jiro Matsuo and Isao Yamada",
year = "1999",
language = "English",
isbn = "078034538X",
volume = "2",
pages = "807--810",
booktitle = "Proceedings of the International Conference on Ion Implantation Technology",
publisher = "IEEE",

}

TY - GEN

T1 - Computer simulation of decaborane implantation and rapid thermal annealing

AU - Insepov, Zinetulla

AU - Aoki, Takaaki

AU - Matsuo, Jiro

AU - Yamada, Isao

PY - 1999

Y1 - 1999

N2 - Molecular Dynamics (MD) and Metropolis Monte-Carlo (MMC) models of monomer B and decaborane implantation into Si and following rapid thermal annealing (RTA) processes have been developed. The implanted B dopant and Si-atomic diffusion coefficients were obtained for different substrate temperatures. The simulation of decaborane ion implantation has revealed the formation of an amorphized area in a subsurface region, much larger than that of a single B+ implantation, with the same energy per ion. The calculated B diffusion coefficient has values between 10-12-10-10 cm2 s-1 which agrees well with experimental values obtained for an equilibrium B dopant in Si. Our calculations have shown an unusual temperature dependence with two different activation energies. Low activation energy, less than 0.2 eV, was obtained for a low-temperature region, and a higher activation energy, approximately 3 eV, for a higher-temperature region which is typical for the RTA processing. The higher activation energy is comparable with the equilibrium activation energy, 3.4 eV, for B diffusion in Si. The diffusivity for Si atoms was obtained to be in the interval 10-14-10-12 cm2 s-1. In our present simulation for decaborane cluster implantation into Si, we have not observed the TED phenomenon.

AB - Molecular Dynamics (MD) and Metropolis Monte-Carlo (MMC) models of monomer B and decaborane implantation into Si and following rapid thermal annealing (RTA) processes have been developed. The implanted B dopant and Si-atomic diffusion coefficients were obtained for different substrate temperatures. The simulation of decaborane ion implantation has revealed the formation of an amorphized area in a subsurface region, much larger than that of a single B+ implantation, with the same energy per ion. The calculated B diffusion coefficient has values between 10-12-10-10 cm2 s-1 which agrees well with experimental values obtained for an equilibrium B dopant in Si. Our calculations have shown an unusual temperature dependence with two different activation energies. Low activation energy, less than 0.2 eV, was obtained for a low-temperature region, and a higher activation energy, approximately 3 eV, for a higher-temperature region which is typical for the RTA processing. The higher activation energy is comparable with the equilibrium activation energy, 3.4 eV, for B diffusion in Si. The diffusivity for Si atoms was obtained to be in the interval 10-14-10-12 cm2 s-1. In our present simulation for decaborane cluster implantation into Si, we have not observed the TED phenomenon.

UR - http://www.scopus.com/inward/record.url?scp=0033322699&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033322699&partnerID=8YFLogxK

M3 - Conference contribution

SN - 078034538X

VL - 2

SP - 807

EP - 810

BT - Proceedings of the International Conference on Ion Implantation Technology

PB - IEEE

ER -